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ON FDS6612A
N-Channel 30 V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Brands: ON Semiconductor, LLC
Mfr.Part #: FDS6612A
Datasheet: FDS6612A Datasheet (PDF)
Package/Case: SOIC-8
Product Type: Transistors
FDS6612A General Description
This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
- 8.4 A, 30 V
- RDS(ON) = 22 mΩ @ VGS = 10 V
- RDS(ON) = 30 mΩ @ VGS = 4.5 V
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Application
- This product is general usage and suitable for many different applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | FDS6612A | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Package Description | SOP-8 | Manufacturer Package Code | 751EB |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 | Factory Lead Time | 4 Weeks |
| Samacsys Manufacturer | onsemi | Additional Feature | LOGIC LEVEL COMPATIBLE |
| Application | SWITCHING | Configuration | SINGLE WITH BUILT-IN DIODE |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 8 | Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Surface Mount | YES |
| Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Element Material | SILICON | feature-category | Power MOSFET |
| feature-material | feature-process-technology | TMOS | |
| feature-configuration | Single Quad Drain Triple Source | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 30 | feature-maximum-gate-source-voltage-v | ±20 |
| feature-maximum-gate-threshold-voltage-v | feature-maximum-continuous-drain-current-a | 8.4 | |
| feature-maximum-drain-source-resistance-mohm | 22@10V | feature-typical-gate-charge-vgs-nc | 5.4@5V |
| feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 560@15V | |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 2500 | |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 8 | feature-supplier-package | SOIC |
| feature-standard-package-name1 | SO | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | No |
| feature-svhc-exceeds-threshold | No |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDS6612A chip is a power MOSFET transistor designed for low voltage applications. It has a low on-resistance and is capable of handling high currents. The chip can be used in various electronic devices where efficient power switching is required, such as power management circuits, motor control, and battery protection circuits.
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Equivalent
There are no direct equivalent products to the FDS6612A chip. However, some possible alternatives that offer similar functionality include the IRLML2402, IRLML6401, and IRLML6402 chips. It is recommended to consult the datasheets of these chips to determine if they meet the specific requirements of your application. -
Features
The FDS6612A is a small signal N-channel MOSFET transistor. It has a low on-resistance of 2.6 ohms and a maximum drain current of 3.7A. The device is designed for applications where low voltage, high speed, and low power dissipation are important factors. -
Pinout
The FDS6612A is a dual N-channel PowerTrench MOSFET with a pin count of 8. The pins serve the following functions: pin 1 is the drain of MOSFET 1, pin 2 is the gate of MOSFET 1, pin 3 is the source of MOSFET 1, pin 4 is the gate of MOSFET 2, pin 5 is the drain of MOSFET 2, pin 6 is the source of MOSFET 2, pin 7 is connected internally, and pin 8 is the exposed thermal pad. -
Manufacturer
The manufacturer of the FDS6612A is Fairchild Semiconductor. It is an American company that specializes in the design, development, and production of a wide range of semiconductor devices. -
Application Field
The FDS6612A is a power MOSFET transistor designed for use in low voltage applications such as battery chargers, power management circuits, and DC-DC converters. Its low on-resistance and high-speed switching capabilities make it suitable for various applications where efficient power handling is required. -
Package
The FDS6612A chip has a small outline package (SOP) type, with a form of surface mount equipment (SMT). It has a size of 8 pins.
Datasheet PDF
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