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ON FDS86252

N-Channel 150 V 4.5A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

ISO14001 ISO9001 DUNS

Brands: ON Semiconductor, LLC

Mfr.Part #: FDS86252

Datasheet: FDS86252 Datasheet (PDF)

Package/Case: SO-8

Product Type: Transistors

RoHS Status:

Stock Condition: 3031 pcs, New Original

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Quick Quote

Please submit RFQ for FDS86252 or email to us: Email: [email protected], we will contact you within 12 hours.

FDS86252 General Description

This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.

fds86252

Features

  • Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A
  • Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • 100% UIL Tested
  • RoHS Compliant

Application

  • Consumer Appliances
  • DC-DC Conversion

Specifications

Parameter Value Parameter Value
Manufacturer: onsemi Product Category: MOSFET
RoHS: Details Technology: Si
Mounting Style: SMD/SMT Package / Case: SOIC-8
Transistor Polarity: N-Channel Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 4.5 A
Rds On - Drain-Source Resistance: 55 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3.4 V Qg - Gate Charge: 10.6 nC
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 5 W Channel Mode: Enhancement
Tradename: PowerTrench Series: FDS86252
Packaging: MouseReel Brand: onsemi / Fairchild
Configuration: Single Fall Time: 2.9 ns
Forward Transconductance - Min: 13 S Height: 1.75 mm
Length: 4.9 mm Product Type: MOSFET
Rise Time: 1.6 ns Factory Pack Quantity: 2500
Subcategory: MOSFETs Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 14 ns Typical Turn-On Delay Time: 9.2 ns
Width: 3.9 mm Unit Weight: 0.004586 oz
feature-category Power MOSFET feature-material
feature-process-technology TMOS feature-configuration Single Quad Drain Triple Source
feature-channel-mode Enhancement feature-channel-type N
feature-number-of-elements-per-chip 1 feature-maximum-drain-source-voltage-v 150
feature-maximum-gate-source-voltage-v ±20 feature-maximum-gate-threshold-voltage-v
feature-maximum-continuous-drain-current-a 4.5 feature-maximum-drain-source-resistance-mohm 55@10V
feature-typical-gate-charge-vgs-nc 10.6@10V|5.2@5V feature-typical-gate-charge-10v-nc 10.6
feature-typical-input-capacitance-vds-pf 718@75V feature-typical-output-capacitance-pf
feature-maximum-power-dissipation-mw 2500 feature-packaging Tape and Reel
feature-rad-hard feature-pin-count 8
feature-supplier-package SOIC feature-standard-package-name1 SO
feature-cecc-qualified No feature-esd-protection
feature-military No feature-aec-qualified No
feature-aec-qualified-number feature-auto-motive No
feature-p-pap No feature-eccn-code EAR99
feature-svhc No

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The FDS86252 is a chip used for driving N-Channel MOSFETs in various switching applications, such as motor control, power supplies, and lighting systems. It is equipped with a high-speed gate drive to optimize switching characteristics, and it offers low on-resistance and low gate charge. The chip provides protection features like thermal shutdown, overcurrent protection, and UVLO (Undervoltage Lockout), making it suitable for a wide range of applications that require efficient and reliable MOSFET control.
  • Equivalent

    The FDS86252 chip is a dual N-channel PowerTrench MOSFET. There are several equivalent products available from different manufacturers, including the IRF7313, SiR427DP, and STP9NK60ZFP. These chips have similar specifications and can be used as alternatives in various applications.
  • Features

    The FDS86252 is a dual N-Channel PowerTrench® MOSFET with a low on-resistance and high current rating. It is capable of efficient switching, making it suitable for use in power management circuits and battery protection systems. It features a compact and surface-mountable SO-8 package for ease of use and integration.
  • Pinout

    The FDS86252 is a dual N-channel PowerTrench MOSFET with a 6-pin SOT-23 package. Its pins include the source (S), gate (G), and drain (D) for each of the two MOSFETs. It is primarily used for switching applications in power management and load switching circuits.
  • Manufacturer

    The manufacturer of the FDS86252 is Fairchild Semiconductor Corporation. It is a global company that designs, manufactures, and markets semiconductor devices used in various applications such as automotive, consumer electronics, computing, industrial, and telecommunications.
  • Application Field

    The FDS86252 is a dual N-channel PowerTrench® MOSFET suitable for a wide range of applications, including power management, battery charging, motor control, and solid-state relays. It offers low on-resistance, fast switching capabilities, and high thermal performance, making it ideal for various high-frequency switching applications in automotive, industrial, and consumer electronics.
  • Package

    The FDS86252 chip is a surface mount package with an SO-8 (Small Outline) form factor. Its size is 5.00mm x 6.2mm x 1.75mm.

Datasheet PDF

Preliminary Specification FDS86252 PDF Download

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  • quantity

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    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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