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ON FDMC4435BZ
MOSFET -30V P-Channel PowerTrench
Brands: ON
Mfr.Part #: FDMC4435BZ
Datasheet: FDMC4435BZ Datasheet (PDF)
Package/Case: QFN-8
RoHS Status:
Stock Condition: 7016 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.361 | $0.361 |
| 10 | $0.291 | $2.910 |
| 30 | $0.263 | $7.890 |
| 100 | $0.226 | $22.600 |
| 500 | $0.199 | $99.500 |
| 1000 | $0.191 | $191.000 |
In Stock:7016 PCS
FDMC4435BZ General Description
This P-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
- Max rDS(on) = 20.0mΩ at VGS = -10V, ID = -8.5A
- Max rDS(on) = 37.0mΩ at VGS = -4.5V, ID = -6.3A
- Extended VGSS range (-25V) for battery applications
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
- HBM ESD protection level >7kV typical
- 100% UIL Tested
- Termination is Lead-free and RoHS Compliant
Application
- This product is general usage and suitable for many different applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | Power-33-8 | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 8.5 A | Rds On - Drain-Source Resistance | 20 mOhms |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 53 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.3 W |
| Channel Mode | Enhancement | Tradename | PowerTrench |
| Series | FDMC4435BZ | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 20 ns |
| Height | 0.8 mm | Length | 3.3 mm |
| Product Type | MOSFET | Rise Time | 6 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 34 ns |
| Typical Turn-On Delay Time | 10 ns | Width | 3.3 mm |
| Unit Weight | 0.007055 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDMC4435BZ is a high-performance MOSFET chip designed for use in power management applications. It features a low on-resistance and high current capability, making it suitable for various power supply designs. The chip also offers excellent thermal performance, making it a reliable choice for demanding applications.
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Equivalent
The equivalent products of FDMC4435BZ chip are FDMC4435B, FDMC4435 and FDMC4435BZ-F085. These chips are all N-Channel Power Trench MOSFETs with similar specifications and performance characteristics to the FDMC4435BZ. -
Features
- N-channel MOSFET - Ideal for battery charger, load switch, power management applications - Low on-resistance - High current capability - Fast switching speed - Small form factor - RoHS compliant and halogen-free - Available in SOT-23 package. -
Pinout
The FDMC4435BZ is a dual N-channel PowerTrench MOSFET with a pin count of 8. It is used for high frequency DC-DC converters in notebook computers and lighting applications. Its functions include power switching and power management in electronic systems. -
Manufacturer
Fairchild Semiconductor is the manufacturer of the FDMC4435BZ. Fairchild Semiconductor is a global company that specializes in manufacturing power semiconductor products for various industries including automotive, consumer, industrial, and mobile markets. The company is known for its high-quality and innovative products in the semiconductor industry. -
Application Field
The FDMC4435BZ is commonly used in power management applications, such as DC-DC converters, voltage regulators, and battery charging circuits. It is also suitable for use in automotive electronics, industrial control systems, and consumer electronics where efficient power switching and regulation is required. -
Package
The FDMC4435BZ chip is in a dual-flat no-leads (DFN) package type, with a form factor of Surface Mount Technology (SMT), and a size of 5mm x 6mm.
We provide high quality products, thoughtful service and after sale guarantee
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