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Infineon BSZ160N10NS3G
Transistor MOSFET
Brands: Infineon
Mfr.Part #: BSZ160N10NS3G
Datasheet: BSZ160N10NS3G Datasheet (PDF)
Package/Case: PQFN 3.3 x 3.3
RoHS Status:
Stock Condition: 2863 pcs, New Original
Product Type: Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.288 | $1.288 |
| 10 | $1.073 | $10.730 |
| 30 | $0.955 | $28.650 |
| 100 | $0.820 | $82.000 |
| 500 | $0.641 | $320.500 |
| 1000 | $0.615 | $615.000 |
In Stock:2863 PCS
BSZ160N10NS3G General Description
N-Channel 100 V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8
Features
- 160A continuous drain current
- 100V drain-source voltage
- 0.025 ohm on-resistance
- Low gate charge
- Fast switching speed
- RoHS compliant
Application
- Automotive electric power steering systems
- Electric vehicle power inverters
- Industrial motor drives
- Solar inverters
- Welding equipment
- Uninterruptible power supplies (UPS)
- Electric vehicle charging systems
- Battery management systems
- Industrial automation
- Power distribution systems
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| IDpuls max | 160.0 A | Ptot max | 63.0 W |
| VDS max | 100.0 V | Polarity | N |
| RDS (on) max | 16.0 mΩ | Package | PQFN 3.3 x 3.3 |
| ID max | 40.0 A | VGS(th) max | 3.5 V |
| VGS(th) min | 2.0 V | Operating Temperature max | 150.0 °C |
| Operating Temperature min | -55.0 °C |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSZ160N10NS3G is a Power MOSFET chip developed by Infineon Technologies. It is designed for applications requiring high efficiency and power density, offering low on-state resistance and high current capability. Its small size and high performance make it suitable for various power management applications in industries such as automotive, industrial, and consumer electronics.
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Equivalent
Some equivalent products of the BSZ160N10NS3G chip are IRFS3107-7PbF, IPP60R095C7, MTP5N60E, FDPF7N60NZ, and IRLR7843PBF. These chips have similar voltage, current, and power ratings, making them suitable replacements for the BSZ160N10NS3G in different applications. -
Features
The BSZ160N10NS3G is a 100V N-channel power MOSFET with a low on-resistance of 19mΩ. It has a compact surface-mount D2PAK package and is suitable for high-current applications. The MOSFET also offers a high avalanche energy rating and fast switching speeds. -
Pinout
The BSZ160N10NS3G is a power MOSFET with 7 pins. The pin functions are Source (S), Gate (G), Drain (D), Kelvin Source (KS), Kelvin Drain (KD), Kelvin Gate (KG), and Drv/Gate. -
Manufacturer
The manufacturer of the BSZ160N10NS3G is Infineon Technologies AG. It is a German multinational corporation that specializes in semiconductor solutions for various industries, including automotive, industrial, and power electronics. Infineon is one of the largest semiconductor manufacturers in the world, known for its high-quality products and innovative technology solutions. -
Application Field
The BSZ160N10NS3G is a power MOSFET commonly used in applications such as synchronous rectification, motor control, power supplies, and DC-DC converters. Its low on-resistance and high current capability make it ideal for high efficiency and high power applications where low conduction losses are important. -
Package
The BSZ160N10NS3G chip is a dual N-channel 100V MOSFET in a D2PAK package. It is in a surface mount form with a size of 10.48mm x 10.54mm.
Datasheet PDF
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