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Infineon BSM75GD120DN2
IGBT Module Three Phase Inverter 1200 V 103 A 520 W Chassis Mount Module
Brands: Infineon
Mfr.Part #: BSM75GD120DN2
Datasheet: BSM75GD120DN2 Datasheet (PDF)
Package/Case: EconoPACK 3A
Product Type: Transistors
RoHS Status:
Stock Condition: 2827 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomBSM75GD120DN2 General Description
IGBT Module Three Phase Inverter 1200 V 103 A 520 W Chassis Mount Module
Features
- IXYS IXGH75N120B3H1
- Fuji 2MBI75N-120
- Semikron SKM75GB120DN
- Toshiba MG75Q2YS40
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Modules | RoHS | Details |
| Product | IGBT Silicon Modules | Configuration | Full Bridge |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
| Continuous Collector Current at 25 C | 103 A | Gate-Emitter Leakage Current | 320 nA |
| Pd - Power Dissipation | 520 W | Package / Case | EconoPACK 3A |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
| Brand | Infineon Technologies | Height | 17 mm |
| Length | 122 mm | Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Chassis Mount | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Technology | Si | Width | 62 mm |
| Part # Aliases | SP000100364 BSM75GD120DN2BOSA1 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSM75GD120DN2 is a high power N-channel IGBT designed for use in high voltage applications. It features a blocking voltage of 1200V, a continuous collector current of 75A, and a low on-state voltage drop. This chip is commonly used in industrial motor drives, renewable energy systems, and power supplies.
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Equivalent
Some equivalent products of the BSM75GD120DN2 chip include the SKM75GB128DM, FF75R12RT4, and GT75QR21. These chips are all high-power IGBT modules designed for use in various power electronic applications, such as energy conversion, motor drives, and industrial automation. -
Features
Some features of the BSM75GD120DN2 include a high current rating of 75A, a voltage rating of 1200V, high switching frequency capability, low on-state voltage drop, and a compact and efficient design suitable for various industrial applications. -
Pinout
The BSM75GD120DN2 is a dual, 75A, 1200V IGBT module with a pin count of 7. The functions of the pins are: Pin 1: Collector 1 Pin 2: Emitter 1 Pin 3: Gate 1 Pin 4: Gate 2 Pin 5: Emitter 2 Pin 6: Collector 2 Pin 7: Baseplate -
Manufacturer
Infineon Technologies AG is the manufacturer of the BSM75GD120DN2. They are a German semiconductor manufacturing company that produces a wide range of products including power semiconductors, microcontrollers, and sensors. Infineon serves industries such as automotive, industrial, and consumer electronics with innovative and reliable semiconductor solutions. -
Application Field
The BSM75GD120DN2 is commonly used in industrial applications such as power converters, motor drives, and renewable energy systems. Its high power density and efficiency make it suitable for high-performance and demanding environments where reliability and robustness are essential. -
Package
The BSM75GD120DN2 chip is in a module package type with a form of IGBT (Insulated Gate Bipolar Transistor) module and a size of 75A and 1200V.
Datasheet PDF
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