Infineon BSC047N08NS3G
8A current capacity
Brands: Infineon
Mfr.Part #: BSC047N08NS3G
Datasheet: BSC047N08NS3G Datasheet (PDF)
Package/Case: SuperSO8 5x6
RoHS Status:
Stock Condition: 3195 pcs, New Original
Product Type: Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $1.854 | $1.854 |
10 | $1.610 | $16.100 |
30 | $1.458 | $43.740 |
100 | $1.206 | $120.600 |
500 | $1.135 | $567.500 |
1000 | $1.105 | $1105.000 |
In Stock:3195 PCS
BSC047N08NS3G General Description
The BSC047N08NS3 G is a N-channel power MOSFET manufactured by Infineon Technologies. It is designed for use in a wide range of applications, including DC-DC converters, motor control, and power supplies. This MOSFET features a maximum continuous drain current of 47A and a maximum drain-source voltage of 80V. It has a low on-state resistance of 8mΩ, which helps to reduce power losses and improve efficiency in high-current applications. The BSC047N08NS3 G also has a gate threshold voltage of 2.5V and a gate charge of 58nC, making it easy to drive with standard digital logic circuits. It has a low input capacitance of 2850pF and a fast switching speed, which allows for efficient operation at high frequencies.This MOSFET is housed in a TO-263 package, which provides excellent thermal performance and reliable operation in demanding environments. It is also RoHS compliant, making it suitable for use in environmentally sensitive applications.
Features
Application
Specifications
Parameter | Value | Parameter | Value |
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IDpuls max | 400.0 A | Ptot max | 125.0 W |
VDS max | 80.0 V | Polarity | N |
RDS (on) max | 4.7 mΩ | Package | SuperSO8 5x6 |
ID max | 100.0 A | VGS(th) max | 3.5 V |
VGS(th) min | 2.0 V | Operating Temperature max | 150.0 °C |
Operating Temperature min | -55.0 °C |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the BSC047N08NS3G component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : IRFP4768PBF
Brands :
Package : TO-247AC
Description : 250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Part Number : STP110N8F7
Brands :
Package : TO-220
Description :
Part Number : FDB047N08
Brands :
Package :
Description : by Fairchild Semiconductor
Part Number : SIHG47N60E-E3
Brands : Vishay
Package :
Description :
Part Number : IPP047N08N3
Brands :
Package :
Description : G by Infineon Technologies
Part points
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The BSC047N08NS3G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip designed for use in high-power applications. It features low ON-resistance, high current rating, and fast switching speeds, making it ideal for power management in industrial, automotive, and consumer electronics.
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Equivalent
Some equivalent products of BSC047N08NS3G chip are Infineon IPP047N08N5, Vishay SIHP47N08E-GE3, and Fairchild FCP47N08. These chips are all similar in specifications and can be used as alternatives in various applications. -
Features
1. N-channel 80V power MOSFET 2. Low on-resistance (4.7mΩ) 3. High current handling capability (90A) 4. Excellent thermal performance 5. Low gate charge for fast switching 6. Avalanche energy rated 7. Suitable for high power applications in automotive, industrial, and consumer electronics. -
Pinout
The BSC047N08NS3G is a 80V, 47A N-channel Power MOSFET with a D2PAK package. It has a pin count of 3 with the following functions: Pin 1 (Gate), Pin 2 (Source), and Pin 3 (Drain). -
Manufacturer
The BSC047N08NS3G is manufactured by Infineon Technologies, a German semiconductor manufacturing company that specializes in power electronics, security solutions, and digital security technology. They provide semiconductor solutions for a variety of industries including automotive, industrial, and consumer electronics. -
Application Field
The BSC047N08NS3G is a power MOSFET transistor used in various applications such as motor control, power supplies, and automotive systems. It is commonly found in electric vehicles, industrial machinery, and other high-power electronic devices that require efficient and reliable switching capabilities. -
Package
The BSC047N08NS3G chip comes in a TO-252 package type with a surface-mount form. Its size measures 6.65mm x 6.15mm x 1.55mm.
Datasheet PDF
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