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Infineon BSC047N08NS3G 48HRS

8A current capacity

ISO14001 ISO9001 DUNS

Brands: Infineon

Mfr.Part #: BSC047N08NS3G

Datasheet: BSC047N08NS3G Datasheet (PDF)

Package/Case: SuperSO8 5x6

RoHS Status:

Stock Condition: 3195 pcs, New Original

Product Type: Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $1.854 $1.854
10 $1.610 $16.100
30 $1.458 $43.740
100 $1.206 $120.600
500 $1.135 $567.500
1000 $1.105 $1105.000

In Stock:3195 PCS

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Quick Quote

Please submit RFQ for BSC047N08NS3G or email to us: Email: [email protected], we will contact you within 12 hours.

BSC047N08NS3G General Description

The BSC047N08NS3 G is a N-channel power MOSFET manufactured by Infineon Technologies. It is designed for use in a wide range of applications, including DC-DC converters, motor control, and power supplies. This MOSFET features a maximum continuous drain current of 47A and a maximum drain-source voltage of 80V. It has a low on-state resistance of 8mΩ, which helps to reduce power losses and improve efficiency in high-current applications. The BSC047N08NS3 G also has a gate threshold voltage of 2.5V and a gate charge of 58nC, making it easy to drive with standard digital logic circuits. It has a low input capacitance of 2850pF and a fast switching speed, which allows for efficient operation at high frequencies.This MOSFET is housed in a TO-263 package, which provides excellent thermal performance and reliable operation in demanding environments. It is also RoHS compliant, making it suitable for use in environmentally sensitive applications.

bsc047n08ns3g

Features

  • The BSC047N08NS3 G is a MOSFET transistor designed for high efficiency power switching applications
  • It features a low on-resistance of 4
  • 7 mΩ, a gate charge of 57 nC, and a maximum drain-source voltage of 80V
  • The device also has a rugged Silicon Carbide (SiC) structure, allowing for reliable performance in harsh environments
  • bsc047n08ns3g

    Application

  • The BSC047N08NS3 G is a power MOSFET transistor commonly used in applications such as automotive powertrain, power supply systems, motor control, and industrial automation
  • It is ideal for high current switching applications due to its low on-resistance and high efficiency
  • It is also suitable for use in battery management systems and renewable energy systems
  • Specifications

    Parameter Value Parameter Value
    IDpuls max 400.0 A Ptot max 125.0 W
    VDS max 80.0 V Polarity N
    RDS (on) max 4.7 mΩ Package SuperSO8 5x6
    ID max 100.0 A VGS(th) max 3.5 V
    VGS(th) min 2.0 V Operating Temperature max 150.0 °C
    Operating Temperature min -55.0 °C

    Shipping

    Shipping Type Ship Fee Lead Time
    DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
    Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
    UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
    TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
    EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
    REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

    Processing Time:Shipping fee depend on different zone and country.

    Payment

    Terms of payment Hand Fee
    Wire Transfer Wire Transfer charge US$30.00 banking fee.
    Paypal Paypal charge 4.0% service fee.
    Credit Card Credit Card charge 3.5% service fee.
    Western Union Western Union charge US.00 banking fee.
    Money Gram Money Gram charge US$0.00 banking fee.

    Guarantees

    1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

    2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

    Packing

    • Product

      Step1 :Product

    • Vacuum packaging

      Step2 :Vacuum packaging

    • Anti-static bag

      Step3 :Anti-static bag

    • Individual packaging

      Step4 :Individual packaging

    • Packaging boxes

      Step5 :Packaging boxes

    • bar-code shipping tag

      Step6 :bar-code shipping tag

    All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

    Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

    We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

    After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

    • ESD
    • ESD

    Equivalent Parts

    For the BSC047N08NS3G component, you may consider these replacement and alternative parts:

    Part Number

    Brands

    Package

    Description

    Part Number :   IRFP4768PBF

    Brands :  

    Package :   TO-247AC

    Description :   250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

    Part Number :   STP110N8F7

    Brands :  

    Package :   TO-220

    Description :  

    Part Number :   FDB047N08

    Brands :  

    Package :  

    Description :   by Fairchild Semiconductor

    Part Number :   SIHG47N60E-E3

    Brands :   Vishay

    Package :  

    Description :  

    Part Number :   IPP047N08N3

    Brands :  

    Package :  

    Description :   G by Infineon Technologies

    Part points

    • The BSC047N08NS3G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip designed for use in high-power applications. It features low ON-resistance, high current rating, and fast switching speeds, making it ideal for power management in industrial, automotive, and consumer electronics.
    • Equivalent

      Some equivalent products of BSC047N08NS3G chip are Infineon IPP047N08N5, Vishay SIHP47N08E-GE3, and Fairchild FCP47N08. These chips are all similar in specifications and can be used as alternatives in various applications.
    • Features

      1. N-channel 80V power MOSFET 2. Low on-resistance (4.7mΩ) 3. High current handling capability (90A) 4. Excellent thermal performance 5. Low gate charge for fast switching 6. Avalanche energy rated 7. Suitable for high power applications in automotive, industrial, and consumer electronics.
    • Pinout

      The BSC047N08NS3G is a 80V, 47A N-channel Power MOSFET with a D2PAK package. It has a pin count of 3 with the following functions: Pin 1 (Gate), Pin 2 (Source), and Pin 3 (Drain).
    • Manufacturer

      The BSC047N08NS3G is manufactured by Infineon Technologies, a German semiconductor manufacturing company that specializes in power electronics, security solutions, and digital security technology. They provide semiconductor solutions for a variety of industries including automotive, industrial, and consumer electronics.
    • Application Field

      The BSC047N08NS3G is a power MOSFET transistor used in various applications such as motor control, power supplies, and automotive systems. It is commonly found in electric vehicles, industrial machinery, and other high-power electronic devices that require efficient and reliable switching capabilities.
    • Package

      The BSC047N08NS3G chip comes in a TO-252 package type with a surface-mount form. Its size measures 6.65mm x 6.15mm x 1.55mm.

    Datasheet PDF

    Preliminary Specification BSC047N08NS3G PDF Download

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