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Infineon BSM50GX120DN2
Integrated Circuit Dual 4X1 16TSSOP Multiplexer
Brands: Infineon
Mfr.Part #: BSM50GX120DN2
Datasheet: BSM50GX120DN2 Datasheet (PDF)
Package/Case: MODULE
Product Type: IGBT Modules
RoHS Status:
Stock Condition: 9321 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomBSM50GX120DN2 General Description
The BSM50GX120DN2 is a power semiconductor module developed by the Infineon Technologies company. It is part of the IGBT (Insulated Gate Bipolar Transistor) modules series and is designed for use in high-power applications such as industrial drives, wind power systems, and other renewable energy systems.The BSM50GX120DN2 has a voltage rating of 1200V and a maximum current rating of 50A, making it suitable for high-power applications where efficient power switching is critical. The module utilizes advanced IGBT technology to provide high efficiency and reliability, reducing power losses and improving overall system performance.The module features low switching losses and a compact design, making it suitable for a wide range of applications where space is limited. It also includes built-in temperature monitoring and protection features to ensure safe operation under various operating conditions.
Features
- IGBT module
- High speed switching
- Low thermal resistance
- 1200V voltage rating
- 50A current rating
- Compact design
- Optimized for motor control applications
- Integrated temperature sensor
Application
- Industrial motor drives
- Renewable energy systems
- Uninterruptible power supplies
- Electric vehicle drives
- Welding equipment
- Power factor correction systems
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Modules | RoHS | Details |
| Product | IGBT Silicon Modules | Configuration | Full Bridge |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.2 V |
| Continuous Collector Current at 25 C | 50 A | Gate-Emitter Leakage Current | 300 nA |
| Pd - Power Dissipation | 360 W | Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C | Brand | Infineon Technologies |
| Maximum Gate Emitter Voltage | 20 V | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Technology | Si | Part # Aliases | BSM50GX120DN2BOSA1 SP000100372 BSM50GX120DN2BOSA1 |
| Unit Weight | 7 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSM50GX120DN2 chip is a power module designed for use in industrial and automotive applications. It is a fast-switching, high voltage device capable of handling high currents. The chip features low losses and a compact design, making it suitable for space-constrained applications. It offers efficient power conversion and is typically used in motor drives, welding equipment, and renewable energy systems.
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Equivalent
Equivalent products of the BSM50GX120DN2 chip include the FF300R12KE3, SKM50GB123D, and MG50G6EL1. These chips are similar in terms of specifications and can be used as alternative options for applications requiring a similar power module. -
Features
The BSM50GX120DN2 is a power module with a voltage rating of 1200V and a current rating of 50A. It has low on-resistance and low inductance, making it suitable for high power applications. The module is designed for use in industrial drives, welding equipment, and renewable energy systems. -
Pinout
The BSM50GX120DN2 is a power semiconductor module with a pin count of 8. Its functions include high power-switching applications, such as motor drives or inverters, as well as high-frequency switching, high surge current capability, and low on-state losses. -
Manufacturer
The manufacturer of the BSM50GX120DN2 is Mitsubishi Electric. It is a multinational company specializing in electrical and electronic equipment, including power systems, industrial automation, and home appliances. Mitsubishi Electric is known for its high-quality products, innovative technology, and commitment to sustainability. -
Application Field
The BSM50GX120DN2 is a power module commonly used in industrial applications, particularly in motor drives, HVAC systems, and renewable energy systems. It offers high power density, high efficiency, and reliable performance. -
Package
The BSM50GX120DN2 chip has a package type of IGBT module, a form of insulated gate bipolar transistor module, and a size that is designed to fit standard module packaging.
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Minimum order quantity starts from 1pcs.
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