Orders Over
$5000Infineon IRF7478TRPBF
Transistor with a 60V maximum voltage, 7.6A current capacity, 26mOhm impedance, and 21nC charge
Brands: Infineon
Mfr.Part #: IRF7478TRPBF
Datasheet: IRF7478TRPBF Datasheet (PDF)
Package/Case: SOIC-8
Product Type: Single FETs, MOSFETs
RoHS Status:
Stock Condition: 3,694 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IRF7478TRPBF General Description
The IRF7478TRPBF is a power MOSFET transistor designed for high efficiency power management applications. It has a drain-source voltage of 40V and a continuous drain current of 5.6A, making it suitable for a wide range of power control circuits. With a low on-resistance of 85mΩ at a Vgs of 10V, it offers reduced power dissipation and improved thermal performance.The IRF7478TRPBF features a TO-252 package with 3 leads, making it easy to mount and integrate into circuit designs. It has a junction-to-case thermal resistance of 23°C/W, ensuring that the device stays cool during operation. The MOSFET is RoHS compliant and halogen-free, meeting environmental regulations and ensuring safe usage.This transistor is ideal for applications such as DC-DC converters, motor control, and power supplies where high efficiency and low power dissipation are critical. It features a low gate charge and fast switching speed, enabling high-speed operation and improved system efficiency.
Features
- Power MOSFET with low RDS(on) of 1.1 ohms
- Drain to source voltage of 40V
- Continuous drain current of 9.4A
- Fast switching speed for high efficiency
- Logic level gate drive for easy interfacing
Application
- Switching regulators
- DC-DC converters
- Power management systems
- Electric vehicles
- Motor drives
- Solar inverters
- Industrial automation
- Telecommunications
- LED lighting
- Battery charging circuits
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOIC-8 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 7.6 A | Rds On - Drain-Source Resistance | 30 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 21 nC |
Pd - Power Dissipation | 2.5 W | Brand | Infineon Technologies |
Configuration | Single | Height | 1.75 mm |
Length | 4.9 mm | Product Type | MOSFET |
Factory Pack Quantity | 4000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 3.9 mm |
Unit Weight | 0.019048 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IRF7478TRPBF chip is a power MOSFET transistor that is widely used in electronic devices and circuits. It is designed to handle high currents and voltage levels, making it suitable for a range of applications such as power supplies, motor control, and switching circuits. The chip offers low on-state resistance, efficient performance, and reliable operation, making it a popular choice in various industries.
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Equivalent
Some equivalent products of IRF7478TRPBF chip are IRFI644G, IRFI4024G, and IRFI4212G. -
Features
The features of IRF7478TRPBF include a low on-resistance, a high drain current, a low threshold voltage, a small footprint, and a surface mount package. -
Pinout
The IRF7478TRPBF is a MOSFET transistor with 8 pins. It is a dual N-channel power MOSFET with a maximum current rating of 10.2A and a voltage rating of 60V. The pins include sources, drains, gates, and body. -
Manufacturer
The manufacturer of the IRF7478TRPBF is Infineon Technologies. Infineon is a German semiconductor company that designs and manufactures various types of electronic components and systems. They specialize in power semiconductors, microcontrollers, sensors, and automotive electronics, among others. -
Application Field
The IRF7478TRPBF is a power MOSFET transistor commonly used in applications such as power supplies, motor control, and uninterruptible power supplies (UPS). Its low on-resistance, high current capability, and fast switching speed make it suitable for these applications that require efficient power handling and control. -
Package
The IRF7478TRPBF chip has a package type of D2PAK (TO-263AB), a form of surface mount, and a size of 35.56mm x 26.67mm x 6.35mm.
Datasheet PDF
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