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Infineon BSM100GD120DN2
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-39
Brands: Infineon
Mfr.Part #: BSM100GD120DN2
Datasheet: BSM100GD120DN2 Datasheet (PDF)
Package/Case: EconoPACK 3A
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: IGBT Modules
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $264.102 | $264.102 |
| 30 | $253.391 | $7601.730 |
In Stock:9458 PCS
BSM100GD120DN2 General Description
IGBT MODULE, 1200V, ECONOPACK3; Module Configuration:Six; DC Collector Current:150A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:680W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:39; Current Ic Continuous a Max:100A; Current Temperature:80°C; Full Power Rating Temperature:25°C; No. of Transistors:6; Package / Case:Econopack 3; Power Dissipation Max:680W; Power Dissipation Pd:680W; Pulsed Current Icm:200A; Termination Type:Solder; Voltage Vce Sat Typ:2.5V; Voltage Vces:1.2kV
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | IGBT Modules | RoHS | Details |
| Product | IGBT Silicon Modules | Configuration | Hex |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
| Continuous Collector Current at 25 C | 150 A | Gate-Emitter Leakage Current | 400 nA |
| Pd - Power Dissipation | 680 W | Package / Case | EconoPACK 3A |
| Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
| Brand | Infineon Technologies | Height | 17 mm |
| Length | 122 mm | Maximum Gate Emitter Voltage | 20 V |
| Mounting Style | Chassis Mount | Product Type | IGBT Modules |
| Factory Pack Quantity | 10 | Subcategory | IGBTs |
| Technology | Si | Width | 62 mm |
| Part # Aliases | SP000100365 BSM100GD120DN2BOSA1 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
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Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSM100GD120DN2 is a power semiconductor module designed for industrial applications. It combines IGBT (Insulated Gate Bipolar Transistor) technology with a diode for efficient power conversion. With a voltage rating of 1200V and a current rating of 100A, it offers high reliability and performance in various power electronic systems such as motor drives and inverters.
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Equivalent
Equivalent products to the BSM100GD120DN2 chip include Infineon's FF100R12KT4 and FF150R12KT4 modules, as well as Semikron's SKM100GB128D module. These are all insulated-gate bipolar transistors (IGBT) designed for high-power applications, offering similar specifications and performance characteristics. -
Features
The BSM100GD120DN2 is an IGBT power module with a voltage rating of 1200V and a current rating of 100A. It features low switching losses, high efficiency, and a compact design suitable for various industrial applications, particularly in motor drives and renewable energy systems. -
Pinout
The BSM100GD120DN2 is a dual IGBT module with a pin count of 14. Its functions include high power switching and motor control in industrial applications. -
Manufacturer
The BSM100GD120DN2 is manufactured by Infineon Technologies AG. Infineon is a multinational semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors. They cater to various industries such as automotive, industrial, and consumer electronics. -
Application Field
The BSM100GD120DN2 is typically used in industrial applications such as motor drives, renewable energy systems, and power supplies. It's particularly suitable for high-power applications due to its high voltage and current ratings, making it ideal for efficient energy conversion and motor control. -
Package
The BSM100GD120DN2 is a power module with a dual IGBT (Insulated Gate Bipolar Transistor) chip. It is packaged in a module form and typically comes in a size of 100 x 140 x 30 mm.
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