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Infineon BSC060N10NS3G
N-Channel 100 V 14.9A (Ta), 90A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1
Brands: Infineon Technologies Corporation
Mfr.Part #: BSC060N10NS3G
Datasheet: BSC060N10NS3G Datasheet (PDF)
Package/Case: SuperSO8
RoHS Status:
Stock Condition: 3,686 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.534 | $1.534 |
| 10 | $1.325 | $13.250 |
| 30 | $1.193 | $35.790 |
| 100 | $1.059 | $105.900 |
| 500 | $0.998 | $499.000 |
| 1000 | $0.972 | $972.000 |
In Stock: 3,686 PCS
BSC060N10NS3G General Description
N-Channel 100 V 14.9A (Ta), 90A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1
Features
- N-channel enhancement mode
- Low on-state resistance of 6 mΩ (max) at 10V gate voltage
- High current capability of 120A (continuous drain current)
- Fast switching speed and low gate charge
- Avalanche rated for reliable operation in high-voltage applications
- RoHS compliant and halogen-free
Application
- DC-DC converters and inverters
- Motor control circuits
- Power supplies and battery chargers
- LED lighting
- Audio amplifiers
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | BSC060N10NS3G | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Package Description | TDSON-8 |
| Pin Count | 8 | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | Infineon |
| Avalanche Energy Rating (Eas) | 230 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 14.9 A | Drain-source On Resistance-Max | 0.006 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-N8 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 125 W |
| Pulsed Drain Current-Max (IDM) | 360 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | TIN |
| Terminal Form | NO LEAD | Terminal Position | DUAL |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Series | OptiMOS™ | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 14.9A (Ta), 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 6mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA | Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 50 V |
| Power Dissipation (Max) | 125W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PG-TDSON-8-1 |
| Package / Case | 8-PowerTDFN |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
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![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
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![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the BSC060N10NS3G component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : STPSC1206D
Brands : STMicroelectronics
Package :
Description :
Part Number : SIHF60N10
Brands : Vishay Siliconix
Package :
Description :
Part Number : TK60N10
Brands : Toshiba Semiconductor
Package :
Description :
Part Number : IRFS7734-7P
Brands : Infineon Technologies AG
Package :
Description :
Part points
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BSC060N10NS3G is a power MOSFET transistor chip used for switching applications in power supplies, motor control, and DC-DC converters. It has a low on-resistance and high current carrying capacity, making it suitable for high-power applications.
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Equivalent
The equivalent products of BSC060N10NS3G chip are Infineon IPP60R100CPXKSA1, Toshiba TK10A60W5, and ON Semiconductor NTD40N03R-1G. These chips are also power MOSFETs that can be used as substitutes for the BSC060N10NS3G in various applications. -
Features
The BSC060N10NS3G is a 100 V N-channel Power MOSFET designed for high efficiency and power density applications. It has a low RDS(on) of 6 mΩ, high-temperature operation up to 175°C, and is suitable for use in power supplies, motor control, and automotive applications. -
Pinout
The BSC060N10NS3G is a Power MOSFET with a pin count of 7. The functions of the pins are as follows: Pin 1 - Gate, Pin 2 - Source, Pin 3 - Drain, Pins 4 to 7 - Not connected. -
Manufacturer
The BSC060N10NS3G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer that specializes in power electronics, chip card and security products, sensors and automotive electronics. They are a leading company in the field of integrated circuits and semiconductors, providing solutions for a wide range of industries including automotive, industrial, and consumer electronics. -
Application Field
The BSC060N10NS3G is a power MOSFET transistor commonly used in applications such as motor control, power supplies, and DC-DC converters. Its low on-state resistance, high switching speed, and low gate charge make it suitable for high-efficiency and high-power density designs in automotive, industrial, and consumer electronics. -
Package
The BSC060N10NS3G chip is available in a TO-220-3 package type. It comes in a through-hole form with dimensions of 10.4mm x 4.6mm x 9.45mm.
Datasheet PDF
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