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MMBT5550LT1G
Bipolar Transistors - BJT SS HV XSTR NPN 160V
Brands: onsemi
Mfr.Part #: MMBT5550LT1G
Datasheet: MMBT5550LT1G Datasheet (PDF)
Package/Case: SOT-23-3
RoHS Status:
Stock Condition: 9458 pcs, New Original
Product Type: Bipolar Transistors - BJT
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 10 | $0.035 | $0.350 |
| 100 | $0.028 | $2.800 |
| 300 | $0.025 | $7.500 |
| 3000 | $0.022 | $66.000 |
| 6000 | $0.020 | $120.000 |
| 9000 | $0.019 | $171.000 |
In Stock:9458 PCS
MMBT5550LT1G General Description
The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
Features
- Miniature SOT-23 Surface Mount Package Saves Board Space
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Application
- NA
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | Bipolar Transistors - BJT |
| RoHS: | Details | Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 | Transistor Polarity: | NPN |
| Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 140 V |
| Collector- Base Voltage VCBO: | 160 V | Emitter- Base Voltage VEBO: | 6 V |
| Collector-Emitter Saturation Voltage: | 250 mV | Maximum DC Collector Current: | 600 mA |
| Pd - Power Dissipation: | 225 mW | Gain Bandwidth Product fT: | - |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Series: | MMBT5550L | Packaging: | MouseReel |
| Brand: | onsemi | Continuous Collector Current: | 600 mA |
| DC Collector/Base Gain hfe Min: | 60 | Height: | 0.94 mm |
| Length: | 2.9 mm | Product Type: | BJTs - Bipolar Transistors |
| Factory Pack Quantity: | 3000 | Subcategory: | Transistors |
| Technology: | Si | Width: | 1.3 mm |
| Unit Weight: | 0.000282 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The MMBT5550LT1G is a small signal NPN transistor commonly used in electronic circuits for amplification and switching applications. It has a maximum current rating of 600mA and a maximum voltage rating of 30V. This transistor is housed in a SOT-23 package, making it ideal for compact and space-constrained designs.
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Equivalent
Some equivalent products of the MMBT5550LT1G chip include the MMBT5551LT1G, MMBT5552LT1G, MMBT5551LT3G, and the MMBT5552LT3G. These are all NPN transistors with similar specifications that can be used as replacements for the MMBT5550LT1G in various electronic circuits. -
Features
- Bipolar (BJT) Transistor - NPN Transistor Polarity - 400mW Power Dissipation - 40V Collector-Base Voltage - 25V Collector-Emitter Voltage - 625mW Continuous Collector Current - 2N Footprint Package - Surface Mount Mounting Type -
Pinout
The MMBT5550LT1G is a Small Signal PNP Transistor with a SOT-23 package. It has three pins: Base, Emitter, and Collector. The function of this transistor is to amplify and switch electronic signals in various types of circuits. -
Manufacturer
MMBT5550LT1G is manufactured by ON Semiconductor, which is a global supplier of efficient energy solutions, providing a comprehensive portfolio of semiconductor and system solutions for various applications in the automotive, communications, consumer, industrial, medical, and aerospace and defense markets. It is a leading company in the semiconductor industry, specializing in innovative and sustainable technologies. -
Application Field
MMBT5550LT1G is a general-purpose PNP bipolar junction transistor commonly used in voltage regulation, signal amplification, and switching applications. It is suitable for low-voltage, low-power applications in consumer electronics, automotive systems, and industrial control systems. -
Package
The MMBT5550LT1G chip is a SOT-23 surface mount package, with a form factor of a small outline transistor. It has a size of 2.9mm x 1.3mm x 1.3mm, making it suitable for compact electronic designs.
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