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vishay SI9435BDY-T1-E3
Trans MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R
Brands: Vishay
Mfr.Part #: SI9435BDY-T1-E3
Datasheet: SI9435BDY-T1-E3 Datasheet (PDF)
Package/Case: SOIC-8
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Product Type: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.447 | $0.447 |
| 10 | $0.397 | $3.970 |
| 30 | $0.371 | $11.130 |
| 100 | $0.346 | $34.600 |
| 500 | $0.308 | $154.000 |
| 1000 | $0.300 | $300.000 |
In Stock: 9,458 PCS
SI9435BDY-T1-E3 General Description
P-Channel 30 V 4.1A (Ta) 1.3W (Ta) Surface Mount 8-SOIC
Features
- –5.3 A, –30 V. RDS(ON)= 50 mΩ @ VGS= –10 V
- RDS(ON)= 80 mΩ @ VGS= –4.5 V
- Low gate charge
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Vishay | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SOIC-8 |
| Transistor Polarity: | P-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V | Id - Continuous Drain Current: | 5.7 A |
| Rds On - Drain-Source Resistance: | 42 mOhms | Vgs - Gate-Source Voltage: | - 10 V, + 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V | Qg - Gate Charge: | 24 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 2.5 W | Channel Mode: | Enhancement |
| Tradename: | TrenchFET | Series: | SI9 |
| Packaging: | MouseReel | Brand: | Vishay Semiconductors |
| Configuration: | Single | Fall Time: | 30 ns |
| Forward Transconductance - Min: | 13 S | Product Type: | MOSFET |
| Rise Time: | 42 ns | Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs | Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 30 ns | Typical Turn-On Delay Time: | 14 ns |
| Part # Aliases: | SI9435BDY-E3 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
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Step4 :Individual packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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SI9435BDY-T1-E3 is a dual N-channel MOSFET. It is designed for high efficiency and low power loss in power management applications. The chip features a low on-resistance and can handle a continuous current of up to 10A. Its compact size makes it suitable for space-constrained designs.
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Equivalent
The equivalent products of SI9435BDY-T1-E3 chip are SI9435BDY-T1-E3, SI9435BDY-T1-E3-ND, and SI9435BDY. These chips are N-channel MOSFET transistors designed for high-speed switching applications in power management circuits. -
Features
SI9435BDY-T1-E3 is an N-channel MOSFET with advanced trench process technology. It has a low on-resistance of 6.5 mΩ, high-speed switching capabilities, and a low gate charge. The device also features a high continuous drain current of 150 A, making it suitable for high-performance power management applications. -
Pinout
The SI9435BDY-T1-E3 is a dual N-channel MOSFET with a pin count of 8. It is commonly used in power management applications to switch and control high currents. The pin functions include gate, drain, and source connections for both N-channel MOSFETs. -
Manufacturer
The manufacturer of SI9435BDY-T1-E3 is Vishay Intertechnology. Vishay is a global company specializing in discrete semiconductors and passive electronic components. They produce a wide range of products including resistors, capacitors, inductors, diodes, and transistors for various industries such as automotive, telecommunications, consumer electronics, and industrial applications. -
Application Field
SI9435BDY-T1-E3 is commonly used in voltage regulator circuits, power management systems, and battery charging applications. It is suitable for use in portable electronic devices, automotive systems, industrial control systems, and more. -
Package
The SI9435BDY-T1-E3 is a DFN-8 package type chip, with a form of Surface Mount. It has a size of 2mm x 2mm x 0.75mm.
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