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$5000vishay SI7942DP-T1-E3
Transistor MOSFET Array with Dual N-Channel, 100V Voltage Rating, 3.8A Current Rating, 8-Pin PowerPAK SO Package, Tape and Reel Packaging
Brands: Vishay
Mfr.Part #: SI7942DP-T1-E3
Datasheet: SI7942DP-T1-E3 Datasheet (PDF)
Package/Case: PowerPAK-SO-8
Product Type: FET, MOSFET Arrays
RoHS Status:
Stock Condition: 9,458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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SI7942DP-T1-E3 General Description
The SI7942DP-T1-E3 is a dual P-channel MOSFET power transistor designed for use in power management applications. It is part of Vishay's Vishay Siliconix product line and features a compact, high-performance design suitable for a wide range of industrial and automotive applications.This MOSFET transistor has a drain-source voltage of -40V and a continuous drain current of -4.2A, making it suitable for medium to high power loads. It has a low on-resistance of 110mOhms, which helps to minimize power losses and improve efficiency in power management circuits.The SI7942DP-T1-E3 is housed in a PowerPAK SO-8 package, which provides improved thermal performance and allows for easier PCB mounting. Its compact size and high current handling capacity make it an ideal choice for space-constrained applications where power efficiency and thermal management are important considerations.
Features
- Low On-Resistance: 7.5 mΩ
- Low Gate Charge: 90 nC
- Fast Switching Speed
- Low Threshold Voltage: 2.5V
- RoHS Compliant
- Small Footprint: PowerPAK 1212-8L Package
Application
- Lighting applications
- Portable devices
- Home appliances
- Industrial equipment
- Automotive electronics
- Communications systems
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | PowerPAK-SO-8 | Transistor Polarity | N-Channel |
| Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 5.9 A | Rds On - Drain-Source Resistance | 49 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 16 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 3.5 W |
| Channel Mode | Enhancement | Tradename | TrenchFET |
| Series | SI7 | Brand | Vishay Semiconductors |
| Configuration | Dual | Fall Time | 20 ns |
| Forward Transconductance - Min | 14 S | Height | 1.04 mm |
| Length | 6.15 mm | Product Type | MOSFET |
| Rise Time | 15 ns | Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
| Typical Turn-Off Delay Time | 35 ns | Typical Turn-On Delay Time | 15 ns |
| Width | 5.15 mm | Part # Aliases | SI7942DP-T1 |
| Unit Weight | 0.017870 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The SI7942DP-T1-E3 is a power management chip designed for use in various electronic devices. It offers efficient power management capabilities, including voltage regulation and protection features. Its compact size makes it ideal for integration into small form factor devices.
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Equivalent
Some equivalent products of SI7942DP-T1-E3 chip are LT3652EFE, BQ24195L, and MP2735A. These chips are also integrated power management solutions that provide similar functions and features for battery charging and power management applications. -
Features
1. Dual N-channel MOSFET 2. Logic level gate drive 3. Low on-resistance 4. Low gate charge 5. Fast switching speed 6. RoHS compliant 7. Halogen-free 8. Trench technology for high performance -
Pinout
The SI7942DP-T1-E3 is a dual P-Channel MOSFET with a pin count of 8. Pin 1 is the gate for the first MOSFET, Pin 2 is the source for the first MOSFET, Pin 3 is the drain for the first MOSFET, and so on for the second MOSFET. -
Manufacturer
The SI7942DP-T1-E3 is manufactured by Vishay Semiconductors. Vishay Semiconductors is a leading global manufacturer of discrete semiconductors and passive electronic components. They specialize in components such as diodes, resistors, capacitors, and inductors for a wide range of electronic applications. -
Application Field
The SI7942DP-T1-E3 is a p-channel power MOSFET transistor commonly used in applications such as battery protection circuits, load switches, and power management in portable devices, consumer electronics, and industrial control systems. -
Package
The SI7942DP-T1-E3 chip is available in a DFN-8 package type. It is a dual N-channel 30 V MOSFET in a form of a chip with a size of 2mm x 2mm.
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