This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Infineon IPD640N06LG

TO-252 MOSFETs ROHS

ISO14001 ISO9001 DUNS

Brands: Infineon

Mfr.Part #: IPD640N06LG

Datasheet: IPD640N06LG Datasheet (PDF)

Package/Case: DPAK (TO-252)

Product Type: Transistors

RoHS Status:

Stock Condition: 3528 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Add To Bom

Quick Quote

Please submit RFQ for IPD640N06LG or email to us: Email: [email protected], we will contact you within 12 hours.

IPD640N06LG General Description

The IPD640N06LG is a 60V N-channel power MOSFET designed for high-performance applications requiring low on-resistance and high efficiency. It features a maximum drain-source voltage of 60V, a continuous drain current of 120A, and a low on-resistance of 0.006 ohms.This MOSFET is housed in a TO-252 (DPAK) package, which provides efficient heat dissipation and allows for easy mounting on a PCB. It also features a maximum junction temperature of 175°C, ensuring reliable operation under high-temperature conditions.The IPD640N06LG is suitable for a wide range of applications, including power supplies, motor controls, LED lighting, and battery management systems. Its low on-resistance helps reduce power losses and improve overall system efficiency, making it ideal for high-power and high-frequency switching applications.

ipd640n06lg

Features

  • Low Gate Charge
  • Enhanced Pd Performance
  • Improved dV/dt Capability
  • Key Parameters for Ruggedness
  • Low RDS(on)
  • 100% Avalanche Tested

Application

  • Power supplies
  • DC-DC converters
  • Voltage regulators
  • Battery chargers
  • Motor control
  • Inductive load drivers
  • Switching circuits
  • Automotive electronics
  • LED lighting
  • Industrial automation

Specifications

Parameter Value Parameter Value
IDpuls max 72.0 A VGS(th) max 2.0 V
VGS(th) min 1.2 V Ptot max 47.0 W
VDS max 60.0 V ID max 18.0 A
Package DPAK (TO-252) Polarity N
Operating Temperature max 175.0 °C Operating Temperature min -55.0 °C
RDS (on) max 85.0 mΩ

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Equivalent Parts

For the IPD640N06LG component, you may consider these replacement and alternative parts:

Part Number

Brands

Package

Description

Part Number :   FDP640N06LZ

Brands :  

Package :  

Description :  

Part Number :   IRF640N

Brands :  

Package :  

Description :  

Part Number :   STP80NF06L

Brands :  

Package :  

Description :  

Part Number :   RFP60N06LE

Brands :  

Package :  

Description :  

Part Number :   AOT640N06L

Brands :  

Package :  

Description :  

Part Number :   PSMN4R0-60YS

Brands :  

Package :  

Description :  

Part Number :   HUF75344G3

Brands :  

Package :   TO-247

Description :   75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs75A, 55V, 0.008 Ω,N,UltraFETMOS

Part Number :   NDP6020P

Brands :  

Package :  

Description :  

Part points

  • The IPD640N06LG is a power MOSFET chip designed for high performance and efficiency in electronic applications. It offers a low on-resistance and high current capability, making it suitable for use in power management circuits, motor controls, and other power electronics systems.
  • Equivalent

    The equivalent products of IPD640N06LG chip are IRF644, IRF640, IRF644A, BUZ100, and HUF76113P3. These chips are all N-channel MOSFETs with similar specifications and performance characteristics.
  • Features

    - Fast switching speed - Low on-resistance - Low gate charge - High ruggedness - Suitable for synchronous rectification, motor control, and general-purpose switching applications
  • Pinout

    The IPD640N06LG is a 6-pin OptiMOS power MOSFET. It is a logic level gate input device with a maximum drain current of 240A. The pins are typically used for gate (G), drain (D), and source (S) connection.
  • Manufacturer

    The IPD640N06LG is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon is a leading company in the field of power semiconductors, specializing in components for energy efficiency, mobility, and security. They produce a wide range of products including power MOSFETs, IGBTs, and sensors for various industries such as automotive, industrial, and consumer electronics.
  • Application Field

    The IPD640N06LG is a power MOSFET transistor commonly used in automotive, industrial, and power supply applications. It is ideal for use in DC-DC converters, motor control, switching regulators, and power management systems due to its high power handling capabilities and efficient switching performance.
  • Package

    The IPD640N06LG is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip that comes in a TO-252 package with a through-hole mounting style. It is designed in a single N-channel configuration and has a size of 3.73mm x 6.57mm.

Datasheet PDF

Preliminary Specification IPD640N06LG PDF Download

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • BSZ146N10LS5ATMA1

    BSZ146N10LS5ATMA1

    Infineon Technologies Corporation

    Power Field-Effect Transistor,

  • BSZ096N10LS5ATMA1

    BSZ096N10LS5ATMA1

    Infineon Technologies Corporation

    Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R

  • IRFB4410ZPBF

    IRFB4410ZPBF

    Infineon

    IRFB4410ZPBF - Power Transistor Utilizing Trench T...

  • BSC070N10NS5ATMA1

    BSC070N10NS5ATMA1

    Infineon Technologies Corporation

    Trans MOSFET N-CH 100V 80A 8-Pin TDSON EP T/R

  • ISC060N10NM6ATMA1

    ISC060N10NM6ATMA1

    Infineon Technologies Corporation

    Trans MOSFET N-CH 100V 15A 8-Pin TDSON EP T/R

  • IRFH5010TRPBF

    IRFH5010TRPBF

    Infineon Technologies Corporation

    100V Single N-Channel HEXFET Power MOSFET in a PQF...