Infineon IPD640N06LG
TO-252 MOSFETs ROHS
Brands: Infineon
Mfr.Part #: IPD640N06LG
Datasheet: IPD640N06LG Datasheet (PDF)
Package/Case: DPAK (TO-252)
Product Type: Transistors
RoHS Status:
Stock Condition: 3528 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomIPD640N06LG General Description
The IPD640N06LG is a 60V N-channel power MOSFET designed for high-performance applications requiring low on-resistance and high efficiency. It features a maximum drain-source voltage of 60V, a continuous drain current of 120A, and a low on-resistance of 0.006 ohms.This MOSFET is housed in a TO-252 (DPAK) package, which provides efficient heat dissipation and allows for easy mounting on a PCB. It also features a maximum junction temperature of 175°C, ensuring reliable operation under high-temperature conditions.The IPD640N06LG is suitable for a wide range of applications, including power supplies, motor controls, LED lighting, and battery management systems. Its low on-resistance helps reduce power losses and improve overall system efficiency, making it ideal for high-power and high-frequency switching applications.
Features
- Low Gate Charge
- Enhanced Pd Performance
- Improved dV/dt Capability
- Key Parameters for Ruggedness
- Low RDS(on)
- 100% Avalanche Tested
Application
- Power supplies
- DC-DC converters
- Voltage regulators
- Battery chargers
- Motor control
- Inductive load drivers
- Switching circuits
- Automotive electronics
- LED lighting
- Industrial automation
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
IDpuls max | 72.0 A | VGS(th) max | 2.0 V |
VGS(th) min | 1.2 V | Ptot max | 47.0 W |
VDS max | 60.0 V | ID max | 18.0 A |
Package | DPAK (TO-252) | Polarity | N |
Operating Temperature max | 175.0 °C | Operating Temperature min | -55.0 °C |
RDS (on) max | 85.0 mΩ |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the IPD640N06LG component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : FDP640N06LZ
Brands :
Package :
Description :
Part Number : IRF640N
Brands :
Package :
Description :
Part Number : STP80NF06L
Brands :
Package :
Description :
Part Number : RFP60N06LE
Brands :
Package :
Description :
Part Number : AOT640N06L
Brands :
Package :
Description :
Part Number : HUF75344G3
Brands :
Package : TO-247
Description : 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs75A, 55V, 0.008 Ω,N,UltraFETMOS
Part Number : NDP6020P
Brands :
Package :
Description :
Part points
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The IPD640N06LG is a power MOSFET chip designed for high performance and efficiency in electronic applications. It offers a low on-resistance and high current capability, making it suitable for use in power management circuits, motor controls, and other power electronics systems.
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Equivalent
The equivalent products of IPD640N06LG chip are IRF644, IRF640, IRF644A, BUZ100, and HUF76113P3. These chips are all N-channel MOSFETs with similar specifications and performance characteristics. -
Features
- Fast switching speed - Low on-resistance - Low gate charge - High ruggedness - Suitable for synchronous rectification, motor control, and general-purpose switching applications -
Pinout
The IPD640N06LG is a 6-pin OptiMOS power MOSFET. It is a logic level gate input device with a maximum drain current of 240A. The pins are typically used for gate (G), drain (D), and source (S) connection. -
Manufacturer
The IPD640N06LG is manufactured by Infineon Technologies, a German semiconductor manufacturer. Infineon is a leading company in the field of power semiconductors, specializing in components for energy efficiency, mobility, and security. They produce a wide range of products including power MOSFETs, IGBTs, and sensors for various industries such as automotive, industrial, and consumer electronics. -
Application Field
The IPD640N06LG is a power MOSFET transistor commonly used in automotive, industrial, and power supply applications. It is ideal for use in DC-DC converters, motor control, switching regulators, and power management systems due to its high power handling capabilities and efficient switching performance. -
Package
The IPD640N06LG is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip that comes in a TO-252 package with a through-hole mounting style. It is designed in a single N-channel configuration and has a size of 3.73mm x 6.57mm.
Datasheet PDF
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