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Infineon BSC070N10NS5ATMA1
Trans MOSFET N-CH 100V 80A 8-Pin TDSON EP T/R
Brands: Infineon Technologies Corporation
Mfr.Part #: BSC070N10NS5ATMA1
Datasheet: BSC070N10NS5ATMA1 Datasheet (PDF)
Package/Case: PG-TDSON-8
Product Type: Transistors
BSC070N10NS5ATMA1 General Description
MOSFET, N-CH, 100V, 80A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Features
- Optimized for synchronous rectification
- Ideal for high switching frequency
- Output capacitance reduction of up to 44%
- R DS(on) reduction of up to 43% from previous generation
- Highest system efficiency
- Reduced switching and conduction losses
- Less paralleling required
- Increased power density
- Low voltage overshoot
Application
- Telecom
- Server
- Solar
- Low voltage drives
- Light electric vehicles
- Adapter
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Infineon | Product Category: | MOSFET |
| RoHS: | Y | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | TDSON-8 |
| Number of Channels: | 1 Channel | Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V | Id - Continuous Drain Current: | 80 A |
| Rds On - Drain-Source Resistance: | 7 mOhms | Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
| Vgs - Gate-Source Voltage: | 10 V | Qg - Gate Charge: | 30 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 83 W | Configuration: | Single |
| Channel Mode: | Enhancement | Tradename: | OptiMOS |
| Packaging: | Reel | Height: | 1.27 mm |
| Length: | 5.9 mm | Series: | OptiMOS 5 |
| Transistor Type: | 1 N-Channel | Width: | 5.15 mm |
| Brand: | Infineon Technologies | Forward Transconductance - Min: | 38 S |
| Fall Time: | 6 ns | Product Type: | MOSFET |
| Rise Time: | 5 ns | Factory Pack Quantity: | 5000 |
| Subcategory: | MOSFETs | Typical Turn-Off Delay Time: | 24 ns |
| Typical Turn-On Delay Time: | 13 ns | Part # Aliases: | BSC070N10NS5 SP001241596 |
| Unit Weight: | 0.017870 oz | Tags | BSC070N10NS5, BSC070N10N, BSC070N, BSC070, BSC07, BSC0, BSC |
| RHoS | yes | PBFree | yes |
| HalogenFree | yes | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Package Description | SMALL OUTLINE, R-PDSO-F5 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 53 Weeks, 1 Day | Samacsys Manufacturer | Infineon |
| Avalanche Energy Rating (Eas) | 55 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (ID) | 14 A | Drain-source On Resistance-Max | 0.007 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-F5 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 5 |
| Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 320 A |
| Surface Mount | YES | Terminal Finish | TIN |
| Terminal Form | FLAT | Terminal Position | DUAL |
| Transistor Application | SWITCHING |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSC070N10NS5ATMA1 chip is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed to handle high levels of currents and voltages efficiently. It features low on-resistance, meaning it minimizes power losses and provides higher power density. The chip is commonly used in a variety of applications such as power supplies, electric vehicles, industrial systems, and more.
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Equivalent
Some equivalent products of the BSC070N10NS5ATMA1 chip include BSC070N10NS5S, BSC070N10NS5G, BSC070N10NS5, BSC070N10NS5 AEC-Q101, BSC070N10NS5 E6327, and BSC070N10NS5ATMA1-ND. -
Features
The BSC070N10NS5ATMA1 is a power MOSFET transistor with a drain source voltage rating of 100V, a continuous drain current of 78A, and a low on-resistance of 7mΩ. It is designed for use in various high power applications, such as motor control, power supplies, and inverter designs. -
Pinout
The BSC070N10NS5ATMA1 is a single N-channel MOSFET transistor. It has 8 pins in total, including the gate (G), drain (D), source (S), and substrate (B) pins. The pin count and functions are as follows: 1. Pin 1: Gate (G) 2. Pin 2: Gate (G) 3. Pin 3: Drain (D) 4. Pin 4: Source (S) 5. Pin 5: Source (S) 6. Pin 6: Substrate (B) 7. Pin 7: Substrate (B) 8. Pin 8: Drain (D) -
Manufacturer
The manufacturer of the BSC070N10NS5ATMA1 is Infineon Technologies. Infineon is a German semiconductor company that designs, manufactures, and markets a wide range of semiconductor solutions for various industries, including automotive, industrial, and consumer electronics. -
Application Field
The BSC070N10NS5ATMA1 is a power MOSFET transistor. It can be used in various applications such as motor control, power supplies, and high-frequency switching circuits. -
Package
The BSC070N10NS5ATMA1 chip has a PowerPAK 1212-8 package type, is an N-channel MOSFET form, and has a size of 3.3mm x 3.3mm.
Datasheet PDF
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