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Infineon IPD600N25N3GATMA1
Trans MOSFET N-CH 250V 25A 3-Pin(2+Tab) DPAK T/R
Brands: Infineon Technologies Corporation
Mfr.Part #: IPD600N25N3GATMA1
Datasheet: IPD600N25N3GATMA1 Datasheet (PDF)
Package/Case: TO-252
Product Type: Transistors
IPD600N25N3GATMA1 General Description
MOSFET, N-CH, 250V, 25A, TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:136W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
Features
- Industry’s lowest R DS(on)
- Lowest Q g and Q gd
- World’s lowest FOM RoHS comliant − halogen free MSL 1 rated
- Highest efficiency
- Highest Power density
- Lowest board space consumption
- Minimal device paralleling required
- System cost improvement
- Enviromentally friendly
- Easy-to-design-in products
Application
- Synchronous rectification for AC-DC SMPS
- Isolated DC-DC converters
- Class D audio amplifiers
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| RHoS | yes | PBFree | yes |
| HalogenFree | yes | Manufacturer: | Infineon |
| Product Category: | MOSFET | RoHS: | Details |
| Technology: | Si | Mounting Style: | SMD/SMT |
| Package / Case: | TO-252-3 | Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel | Vds - Drain-Source Breakdown Voltage: | 250 V |
| Id - Continuous Drain Current: | 25 A | Rds On - Drain-Source Resistance: | 60 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Gate Charge: | 22 nC | Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C | Pd - Power Dissipation: | 136 W |
| Channel Mode: | Enhancement | Tradename: | OptiMOS |
| Series: | OptiMOS 3 | Packaging: | MouseReel |
| Brand: | Infineon Technologies | Configuration: | Single |
| Fall Time: | 8 ns | Forward Transconductance - Min: | 24 S |
| Height: | 2.3 mm | Length: | 6.5 mm |
| Product Type: | MOSFET | Rise Time: | 10 ns |
| Factory Pack Quantity: | 2500 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 22 ns |
| Typical Turn-On Delay Time: | 10 ns | Width: | 6.22 mm |
| Part # Aliases: | IPD600N25N3 G SP001127834 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
The IPD600N25N3GATMA1 chip is a high-performance power MOSFET designed for use in various applications, such as power supplies and motor control. It offers low on-resistance and fast switching characteristics, making it suitable for high-frequency operation. Additionally, it has a compact size and efficient performance, making it an ideal choice for space-constrained designs.
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Features
The IPD600N25N3GATMA1 is a power MOSFET with a rugged design and low on-state resistance. It offers high performance and improved efficiency in applications that require switching frequencies up to 100kHz. This MOSFET also has a built-in gate-to-source voltage (VGS) protection, making it reliable and safe to use. -
Pinout
The IPD600N25N3GATMA1 is a power MOSFET with a pin count of 3. The functions of these pins include the gate (G), drain (D), and source (S). -
Manufacturer
The manufacturer of the IPD600N25N3GATMA1 is Infineon Technologies AG. Infineon is a multinational semiconductor manufacturer that engages in the production of a wide range of semiconductor products for various industries, including automotive, industrial, chip card, and power management. -
Application Field
The IPD600N25N3GATMA1 is a high-performance power MOSFET designed for various applications, including power supplies, motor control, and automotive systems. It features a low on-resistance, high efficiency, and excellent switching performance, making it suitable for use in a wide range of industrial and consumer electronic devices. -
Package
The IPD600N25N3GATMA1 chip is packaged in a D²PAK form with a size of 10mm x 11mm (3.3mm height).
Datasheet PDF
Key points
-
The IPD600N25N3GATMA1 chip is a high-performance power MOSFET designed for use in various applications, such as power supplies and motor control. It offers low on-resistance and fast switching characteristics, making it suitable for high-frequency operation. Additionally, it has a compact size and efficient performance, making it an ideal choice for space-constrained designs.
-
Features
The IPD600N25N3GATMA1 is a power MOSFET with a rugged design and low on-state resistance. It offers high performance and improved efficiency in applications that require switching frequencies up to 100kHz. This MOSFET also has a built-in gate-to-source voltage (VGS) protection, making it reliable and safe to use. -
Pinout
The IPD600N25N3GATMA1 is a power MOSFET with a pin count of 3. The functions of these pins include the gate (G), drain (D), and source (S). -
Manufacturer
The manufacturer of the IPD600N25N3GATMA1 is Infineon Technologies AG. Infineon is a multinational semiconductor manufacturer that engages in the production of a wide range of semiconductor products for various industries, including automotive, industrial, chip card, and power management. -
Application Field
The IPD600N25N3GATMA1 is a high-performance power MOSFET designed for various applications, including power supplies, motor control, and automotive systems. It features a low on-resistance, high efficiency, and excellent switching performance, making it suitable for use in a wide range of industrial and consumer electronic devices. -
Package
The IPD600N25N3GATMA1 chip is packaged in a D²PAK form with a size of 10mm x 11mm (3.3mm height).
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