Infineon IPB180N03S4L-H0
MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2
Brands: infineon
Mfr.Part #: IPB180N03S4L-H0
Datasheet: IPB180N03S4L-H0 Datasheet (PDF)
Package/Case: TO263-7
RoHS Status:
Stock Condition: 4094 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $1.322 | $1.322 |
200 | $0.512 | $102.400 |
500 | $0.494 | $247.000 |
1000 | $0.486 | $486.000 |
In Stock:4094 PCS
IPB180N03S4L-H0 General Description
N-Channel 30 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-263-7 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 180 A | Rds On - Drain-Source Resistance | 1.1 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 176 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 188 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Tradename | OptiMOS | Series | OptiMOS-T2 |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 41 ns | Height | 4.4 mm |
Length | 10 mm | Product Type | MOSFET |
Rise Time | 24 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 38 ns | Typical Turn-On Delay Time | 35 ns |
Width | 9.25 mm | Part # Aliases | SP000555050 IPB18N3S4LHXT IPB180N03S4LH0ATMA1 |
Unit Weight | 0.056438 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IPB180N03S4L-H0 is a power MOSFET designed for high efficiency power applications. It features a low on-resistance and high current capability, making it suitable for use in a wide range of electronic devices such as power supplies, motor control, and battery management systems. The chip is designed for use in automotive, industrial, and consumer electronics applications.
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Equivalent
Some equivalent products of the IPB180N03S4L-H0 chip include the IRFP3710, IRF2807, and IRF3710. These MOSFETs have similar specifications and can be used as substitutes in various applications requiring a power transistor with similar characteristics. -
Features
1. MOSFET transistor 2. N-channel 3. Low on-resistance (RDS(on) = 1.8 mΩ) 4. Low threshold voltage (VGS(th) = 2V) 5. High current handling capability (180A) 6. High power dissipation (418W) 7. TO263-3 package (D²PAK) -
Pinout
The IPB180N03S4L-H0 is a 8-pin Power MOSFET transistor. The pin functions are as follows: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: NC (no connection) - Pins 5, 6, 7, 8: NC (no connection) -
Manufacturer
Infineon Technologies AG is the manufacturer of the IPB180N03S4L-H0. They are a German semiconductor manufacturer specializing in power management, sensor solutions, and security applications. Infineon Technologies AG is a global company with a focus on innovations and technologies that enable secure, efficient, and sustainable solutions for a variety of industries. -
Application Field
The IPB180N03S4L-H0 is commonly used in power management applications such as motor control, DC-DC converters, and battery charging circuits due to its high efficiency, low on-resistance, and high current handling capabilities. Additionally, it is suitable for use in automotive, industrial, and consumer electronics applications. -
Package
The IPB180N03S4L-H0 chip comes in a TO-263 (D2PAK) package, with a small outline size of 10.7mm x 10.5mm and a form factor of a single MOSFET. Its size and form make it suitable for a wide range of applications requiring high power and efficiency.
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