This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Infineon IPB180N03S4L-H0 48HRS

MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2

ISO14001 ISO9001 DUNS

Brands: infineon

Mfr.Part #: IPB180N03S4L-H0

Datasheet: IPB180N03S4L-H0 Datasheet (PDF)

Package/Case: TO263-7

RoHS Status:

Stock Condition: 4094 pcs, New Original

Product Type: MOSFET

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $1.322 $1.322
200 $0.512 $102.400
500 $0.494 $247.000
1000 $0.486 $486.000

In Stock:4094 PCS

- +

Quick Quote

Please submit RFQ for IPB180N03S4L-H0 or email to us: Email: [email protected], we will contact you within 12 hours.

IPB180N03S4L-H0 General Description

N-Channel 30 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3

IPB180N03S4L-H0
IPB180N03S4L-H0

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-263-7 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 180 A Rds On - Drain-Source Resistance 1.1 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 176 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 188 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename OptiMOS Series OptiMOS-T2
Brand Infineon Technologies Configuration Single
Fall Time 41 ns Height 4.4 mm
Length 10 mm Product Type MOSFET
Rise Time 24 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 38 ns Typical Turn-On Delay Time 35 ns
Width 9.25 mm Part # Aliases SP000555050 IPB18N3S4LHXT IPB180N03S4LH0ATMA1
Unit Weight 0.056438 oz

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The IPB180N03S4L-H0 is a power MOSFET designed for high efficiency power applications. It features a low on-resistance and high current capability, making it suitable for use in a wide range of electronic devices such as power supplies, motor control, and battery management systems. The chip is designed for use in automotive, industrial, and consumer electronics applications.
  • Equivalent

    Some equivalent products of the IPB180N03S4L-H0 chip include the IRFP3710, IRF2807, and IRF3710. These MOSFETs have similar specifications and can be used as substitutes in various applications requiring a power transistor with similar characteristics.
  • Features

    1. MOSFET transistor 2. N-channel 3. Low on-resistance (RDS(on) = 1.8 mΩ) 4. Low threshold voltage (VGS(th) = 2V) 5. High current handling capability (180A) 6. High power dissipation (418W) 7. TO263-3 package (D²PAK)
  • Pinout

    The IPB180N03S4L-H0 is a 8-pin Power MOSFET transistor. The pin functions are as follows: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: NC (no connection) - Pins 5, 6, 7, 8: NC (no connection)
  • Manufacturer

    Infineon Technologies AG is the manufacturer of the IPB180N03S4L-H0. They are a German semiconductor manufacturer specializing in power management, sensor solutions, and security applications. Infineon Technologies AG is a global company with a focus on innovations and technologies that enable secure, efficient, and sustainable solutions for a variety of industries.
  • Application Field

    The IPB180N03S4L-H0 is commonly used in power management applications such as motor control, DC-DC converters, and battery charging circuits due to its high efficiency, low on-resistance, and high current handling capabilities. Additionally, it is suitable for use in automotive, industrial, and consumer electronics applications.
  • Package

    The IPB180N03S4L-H0 chip comes in a TO-263 (D2PAK) package, with a small outline size of 10.7mm x 10.5mm and a form factor of a single MOSFET. Its size and form make it suitable for a wide range of applications requiring high power and efficiency.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

Ratings and Reviews

Ratings
Please rate the product !
Please enter a comment

Please submit comments after logging into your account.

Submit

Recommend

  • BSZ146N10LS5ATMA1

    BSZ146N10LS5ATMA1

    Infineon Technologies Corporation

    Power Field-Effect Transistor,

  • BSZ096N10LS5ATMA1

    BSZ096N10LS5ATMA1

    Infineon Technologies Corporation

    Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R

  • IRFB4410ZPBF

    IRFB4410ZPBF

    Infineon

    IRFB4410ZPBF - Power Transistor Utilizing Trench T...

  • BSC070N10NS5ATMA1

    BSC070N10NS5ATMA1

    Infineon Technologies Corporation

    Trans MOSFET N-CH 100V 80A 8-Pin TDSON EP T/R

  • ISC060N10NM6ATMA1

    ISC060N10NM6ATMA1

    Infineon Technologies Corporation

    Trans MOSFET N-CH 100V 15A 8-Pin TDSON EP T/R

  • IRFH5010TRPBF

    IRFH5010TRPBF

    Infineon Technologies Corporation

    100V Single N-Channel HEXFET Power MOSFET in a PQF...