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Infineon BSZ096N10LS5ATMA1

Trans MOSFET N-CH 100V 11A 8-Pin TSDSON EP T/R

ISO14001 ISO9001 DUNS

Brands: Infineon Technologies Corporation

Mfr.Part #: BSZ096N10LS5ATMA1

Datasheet: BSZ096N10LS5ATMA1 Datasheet (PDF)

Package/Case: PG-TSDSON-8

RoHS Status:

Stock Condition: 3277 pcs, New Original

Product Type: Transistors

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $1.351 $1.351
200 $0.523 $104.600
500 $0.505 $252.500
1000 $0.497 $497.000

In Stock:3277 PCS

- +

Quick Quote

Please submit RFQ for BSZ096N10LS5ATMA1 or email to us: Email: [email protected], we will contact you within 12 hours.

BSZ096N10LS5ATMA1 General Description

Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom

Features

  • Low R DS(on) in small package
  • Low gate charge
  • Lower output charge
  • Logic level compatibility
  • Higher power density designs
  • Higher switching frequency
  • Reduced parts count wherever 5V supplies are available
  • Driven directly from microcontrollers (slow switching)
  • System cost reduction

Application

  • Wireless charging

Specifications

Parameter Value Parameter Value
Manufacturer: Infineon Product Category: MOSFET
RoHS: Y Technology: Si
Mounting Style: SMD/SMT Package / Case: TSDSON-8
Number of Channels: 1 Channel Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 40 A
Rds On - Drain-Source Resistance: 9.6 mOhms Vgs th - Gate-Source Threshold Voltage: 1.1 V
Vgs - Gate-Source Voltage: 10 V Qg - Gate Charge: 22 nC
Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 69 W Configuration: Single
Channel Mode: Enhancement Tradename: OptiMOS
Packaging: Reel Height: 1.1 mm
Length: 3.3 mm Series: OptiMOS 5
Transistor Type: 1 N-Channel Width: 3.3 mm
Brand: Infineon Technologies Forward Transconductance - Min: 22 S
Development Kit: EVAL_1K4W_ZVS_FB_CFD7 Fall Time: 5.3 ns
Product Type: MOSFET Rise Time: 4.6 ns
Factory Pack Quantity: 5000 Subcategory: MOSFETs
Typical Turn-Off Delay Time: 21 ns Typical Turn-On Delay Time: 5.7 ns
Part # Aliases: BSZ096N10LS5 SP001352994 Unit Weight: 0.001295 oz
Tags BSZ09, BSZ0, BSZ RHoS yes
PBFree yes

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • BSZ096N10LS5ATMA1 is a power transistor chip designed for high-speed switching applications in power supplies, motor control, and LED lighting. It features a low on-state resistance, high current rating, and low gate charge for improved efficiency and performance. The chip is part of the SuperFET® MOSFET family from Infineon Technologies.
  • Equivalent

    Equivalent products of BSZ096N10LS5ATMA1 chip are BSZ096N10LS5ATMA1A, BSZ097N10LS5ATMA1, BSZ098N10LS5ATMA1, BSZ099N10LS5ATMA1, BSZ100N10LS5ATMA1, and BSZ101N10LS5ATMA1. These are all similar chips with varying specifications that can be used interchangeably in different applications.
  • Features

    BSZ096N10LS5ATMA1 is a N-channel 100V Power MOSFET with a low RDS(on) of 9.6mΩ and a high current rating of 76A, making it suitable for high power applications. It also features a TO-220 package with a D2PAK footprint, enhancing thermal performance and ease of mounting.
  • Pinout

    The BSZ096N10LS5ATMA1 is a single N-channel 100V MOSFET transistor with a power package. It has 5 pins (Gate, Source, Drain, and two body diode pins). Pin functions include Gate (input), Source (ground), Drain (output), and body pins (connection to the internal body diodes).
  • Manufacturer

    The manufacturer of the BSZ096N10LS5ATMA1 is Infineon Technologies, a German semiconductor manufacturing company specializing in designing and producing high-performance semiconductors for various industries, including automotive, industrial, and consumer electronics. They are known for their innovative products and technology solutions.
  • Application Field

    The BSZ096N10LS5ATMA1 is a power MOSFET transistor commonly used in automotive applications such as power steering systems, electric pumps, and motor control. It is also used in industrial applications for power management, battery protection, and DC-DC converters due to its high efficiency and low power dissipation characteristics.
  • Package

    The BSZ096N10LS5ATMA1 chip comes in a Power-SO8 package type and is in a surface-mount form. It has a size of 5mm x 6mm.

Datasheet PDF

Preliminary Specification BSZ096N10LS5ATMA1 PDF Download

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