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Infineon IPB017N10N5LFATMA1
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R
Brands: Infineon
Mfr.Part #: IPB017N10N5LFATMA1
Datasheet: IPB017N10N5LFATMA1 Datasheet (PDF)
Package/Case: TO-263-7
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Mosfet, N-Ch, 100V, 180A, 313W, To-263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Rohs Compliant: Yes |Infineon IPB017N10N5LFATMA1
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | Infineon | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | TO-263-7 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V | Id - Continuous Drain Current: | 180 A |
| Rds On - Drain-Source Resistance: | 1.5 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V | Qg - Gate Charge: | 210 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 375 W | Channel Mode: | Enhancement |
| Tradename: | OptiMOS | Series: | OptiMOS 5 |
| Packaging: | MouseReel | Brand: | Infineon Technologies |
| Configuration: | Single | Fall Time: | 27 ns |
| Forward Transconductance - Min: | 132 S | Product Type: | MOSFET |
| Rise Time: | 23 ns | Factory Pack Quantity: | 1000 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 80 ns | Typical Turn-On Delay Time: | 33 ns |
| Part # Aliases: | IPB017N10N5LF SP001503850 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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IPB017N10N5LFATMA1 is a power MOSFET chip designed for high-performance applications. It features low ON resistance, high power density, and thermal efficiency for optimal power management. This chip is suitable for use in automotive, industrial, and consumer electronics applications.
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Equivalent
The equivalent products of the IPB017N10N5LFATMA1 chip are IPP055N10N5G and IPB048N10N5G. These are also power MOSFETs with similar specifications and performance characteristics. -
Features
The IPB017N10N5LFATMA1 is a MOSFET transistor with a drain-source voltage of 100V, a continuous drain current of 36A, and a low on-resistance of 17mΩ. It also has a TO-263-3 package type and is suitable for use in automotive applications such as motor control and power distribution. -
Pinout
The IPB017N10N5LFATMA1 is a power MOSFET with a pin count of 3. Pin 1 is the gate, Pin 2 is the drain, and Pin 3 is the source. Its function is to control the flow of current in electronic devices or circuits. -
Manufacturer
The IPB017N10N5LFATMA1 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer specializing in power semiconductors, as well as chip solutions for automotive, industrial, and security applications. They are one of the top semiconductor companies worldwide, known for their innovative and high-quality products. -
Application Field
The IPB017N10N5LFATMA1 is a MOSFET transistor commonly used in power management applications such as voltage regulation, motor control, and power supplies. It is also suitable for use in automotive electronics, industrial equipment, and battery management systems due to its high voltage and current rating capabilities. -
Package
The IPB017N10N5LFATMA1 chip comes in a TO-263-3 package, with a form of surface mount and a size of 10mm x 17.5mm.
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365 days quality guarantee for all products
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