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Infineon IPP60R180P7XKSA1
N-Channel 650 V 18A (Tc) 72W (Tc) Through Hole PG-TO220-3
Brands: Infineon Technologies Corporation
Mfr.Part #: IPP60R180P7XKSA1
Datasheet: IPP60R180P7XKSA1 Datasheet (PDF)
Package/Case: TO220-3
Product Type: Transistors
IPP60R180P7XKSA1 General Description
N-Channel 650 V 18A (Tc) 72W (Tc) Through Hole PG-TO220-3
Features
- 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G
- ESD ruggedness of ≥ 2kV (HBM class 2)
- Integrated gate resistor R G
- Rugged body diode
- Wide portfolio in through hole and surface mount packages
- Both standard grade and industrial grade parts are available
- Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency
- Ease-of-use in manufacturing environments by stopping ESD failures occurring
- Integrated R G reduces MOSFET oscillation sensitivity
- MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
- Excellent ruggedness during hard commutation of the body diode seen in LLC topology
- Suitable for a wide variety of end applications and output powers
- Parts available suitable for consumer and industrial applications
Application
- TV power supply
- Industrial SMPS
- Server
- Telecom
- Lighting
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| RHoS | yes | PBFree | yes |
| HalogenFree | yes | Manufacturer: | Infineon |
| Product Category: | MOSFET | RoHS: | Details |
| Technology: | Si | Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 | Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel | Vds - Drain-Source Breakdown Voltage: | 600 V |
| Id - Continuous Drain Current: | 18 A | Rds On - Drain-Source Resistance: | 145 mOhms |
| Vgs - Gate-Source Voltage: | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Qg - Gate Charge: | 25 nC | Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C | Pd - Power Dissipation: | 72 W |
| Channel Mode: | Enhancement | Tradename: | CoolMOS |
| Series: | CoolMOS P7 | Packaging: | Tube |
| Brand: | Infineon Technologies | Configuration: | Single |
| Fall Time: | 8 ns | Product Type: | MOSFET |
| Rise Time: | 12 ns | Factory Pack Quantity: | 500 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 85 ns | Typical Turn-On Delay Time: | 14 ns |
| Part # Aliases: | IPP60R180P7 SP001606038 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IPP60R180P7XKSA1 chip is a power MOSFET transistor designed for high voltage applications. It has a voltage rating of 600V and a maximum current of 16A. The chip features low on-resistance and fast switching performance, making it suitable for power management and motor control systems in various industrial and consumer electronics applications.
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Features
- N-channel power MOSFET - VDS = 600 V, ID = 20 A - Low on-resistance - High power dissipation capability - Suitable for applications requiring high power density and efficiency - Designed for use in a wide range of electronic devices such as industrial and consumer applications. -
Pinout
The IPP60R180P7XKSA1 is a power MOSFET with a pin count of 3. It is commonly used in applications that require high power and high efficiency, such as motor control and power supplies. It has a low on-resistance and can handle a maximum current of 60A. -
Manufacturer
The manufacturer of the IPP60R180P7XKSA1 is Infineon Technologies AG. Infineon is a German semiconductor manufacturer and one of the leading companies in the field of advanced electronics. They specialize in the production of various semiconductor products, including power management solutions, microcontrollers, sensors, and automotive electronics. -
Application Field
The IPP60R180P7XKSA1 is a power MOSFET transistor that can be used in various applications such as industrial power supplies, switch mode power supplies, motor control, and lighting systems. It is designed for high efficiency and low power dissipation, making it suitable for applications that require high power handling capabilities. -
Package
The IPP60R180P7XKSA1 chip comes in a TO-220 package type. It has a through-hole form and measures approximately 10.4mm x 9.15mm x 4.6mm in size.
Datasheet PDF
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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