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Infineon BSC110N15NS5ATMA1

INFINEON - BSC110N15NS5ATMA1 - MOSFET, N-CH, 150V, 76A, TDSON-8

ISO14001 ISO9001 DUNS

Brands: Infineon Technologies Corporation

Mfr.Part #: BSC110N15NS5ATMA1

Datasheet: BSC110N15NS5ATMA1 Datasheet (PDF)

Package/Case: DFN

RoHS Status:

Stock Condition: 3021 pcs, New Original

Product Type: Diodes & Rectifiers

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $2.392 $2.392
10 $2.080 $20.800
30 $1.885 $56.550
100 $1.685 $168.500
500 $1.596 $798.000
1000 $1.557 $1557.000

In Stock:3021 PCS

- +

Quick Quote

Please submit RFQ for BSC110N15NS5ATMA1 or email to us: Email: [email protected], we will contact you within 12 hours.

BSC110N15NS5ATMA1 General Description

Mosfet, N-Ch, 150V, 76A, 150Deg C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:76A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.8V Rohs Compliant: Yes |Infineon BSC110N15NS5ATMA1

bsc110n15ns5atma1

Features

  • Lower R DS(on) without compromising FOM gd and FOM oss
  • Lower output charge
  • Ultra-low reverse recovery charge
  • Increased commutation ruggedness
  • Higher switching frequency possible
  • Reduced paralleling
  • Size reduction enabled with SuperSO8 best-in-class
  • Higher power density designs
  • More rugged products
  • System cost reduction
  • Improved EMI behavior

Application

  • Low voltage drives

Specifications

Parameter Value Parameter Value
RHoS yes PBFree yes
HalogenFree yes Series OptiMOS™
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 38A, 10V Vgs(th) (Max) @ Id 4.6V @ 91µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2770 pF @ 75 V Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7 Package / Case 8-PowerTDFN
Base Product Number BSC110

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The BSC110N15NS5ATMA1 chip is a type of Power MOSFET semiconductor device. It is designed to handle large amounts of power efficiently and effectively. The chip features low on-resistance and high current handling capabilities, making it suitable for various applications such as power supplies, motor control, and inverters.
  • Equivalent

    The equivalent products of the BSC110N15NS5ATMA1 chip are the BSC110N15NS5 G, BSC110N15NS5 S, BSC110N15NS5 E, and BSC110N15NS5 H chips.
  • Features

    The BSC110N15NS5ATMA1 is a power MOSFET transistor. It has a voltage rating of 150V and a current rating of 110A. It features a low on-resistance, high efficiency, and high power-density. This MOSFET is designed for various applications such as motor control, power supplies, and DC-DC converters.
  • Pinout

    The BSC110N15NS5ATMA1 is a Power MOSFET transistor. It has a pin count of 5 and is used for switching applications in power supplies, DC-DC converters, and motor control circuits.
  • Manufacturer

    Infineon Technologies AG is the manufacturer of the BSC110N15NS5ATMA1. It is a multinational semiconductor manufacturer specializing in the production of various electronic components.
  • Application Field

    The BSC110N15NS5ATMA1 is a power MOSFET that can be used in various applications such as motor control, power supplies, inverters, and industrial switching. It is designed for a wide range of voltage and current requirements, making it suitable for different electronic systems that require high power switching capabilities.
  • Package

    The BSC110N15NS5ATMA1 chip has a package type of Power-SO8, a form factor of SMD, and a size of 5 mm by 6 mm. This chip is a power MOSFET used in high-frequency applications.

Datasheet PDF

Preliminary Specification BSC110N15NS5ATMA1 PDF Download

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  • quantity

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