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ON FQB22P10TM
P-Channel 100 V 22A (Tc) 3.75W (Ta), 125W (Tc) Surface Mount D²PAK (TO-263)
Brands: ON Semiconductor, LLC
Mfr.Part #: FQB22P10TM
Datasheet: FQB22P10TM Datasheet (PDF)
Package/Case: D2PAK
Product Type: Transistors
RoHS Status:
Stock Condition: 3060 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomFQB22P10TM General Description
This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
- -22A, -100V, RDS(on) =125mΩ(Max.) @VGS = -10 V, ID = -11A
- Low gate charge ( Typ.40nC)
- Low Crss ( Typ. 160pF)
- 100% avalanche tested
- 175°C maximum junction temperature rating
Application
- Other Industrial
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Status | Active | CAD Models | |
| Compliance | PbAHP | Package Type | D2PAK-3 / TO-263-2 |
| Case Outline | 418AJ | MSL Type | 1 |
| MSL Temp (°C) | 245 | Container Type | REEL |
| Container Qty. | 800 | ON Target | Y |
| Channel Polarity | P-Channel | Configuration | Single |
| V(BR)DSS Min (V) | -100 | VGS Max (V) | ±30 |
| VGS(th) Max (V) | -4 | ID Max (A) | -22 |
| PD Max (W) | 125 | RDS(on) Max @ VGS = 2.5 V (mΩ) | - |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | - | RDS(on) Max @ VGS = 10 V (mΩ) | 125 |
| Qg Typ @ VGS = 4.5 V (nC) | - | Qg Typ @ VGS = 10 V (nC) | 40 |
| Ciss Typ (pF) | 1170 | Pricing ($/Unit) | $0.8005Sample |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | DMOS | feature-configuration | Single |
| feature-channel-mode | Enhancement | feature-channel-type | P |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 100 |
| feature-maximum-gate-source-voltage-v | ±30 | feature-maximum-gate-threshold-voltage-v | |
| feature-maximum-continuous-drain-current-a | 22 | feature-maximum-drain-source-resistance-mohm | 125@10V |
| feature-typical-gate-charge-vgs-nc | 40@10V | feature-typical-gate-charge-10v-nc | 40 |
| feature-typical-input-capacitance-vds-pf | 1170@25V | feature-typical-output-capacitance-pf | |
| feature-maximum-power-dissipation-mw | 3750 | feature-packaging | Tape and Reel |
| feature-rad-hard | feature-pin-count | 3 | |
| feature-supplier-package | D2PAK | feature-standard-package-name1 | TO-263 |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | Yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FQB22P10TM is a power mosfet chip designed for switching applications. it features a low on-resistance and high current capability, making it suitable for various power electronics applications such as voltage regulators, motor control, and power supplies. with its compact size and high performance, this chip offers efficient power management solutions.
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Equivalent
There are no direct equivalent products to the FQB22P10TM chip. however, similar alternatives may include the irf5305pbf, psmn1r8-30ylc, or the stb30n10blt4. it is recommended to consult the datasheets of these chips to ensure compatibility with your specific requirements. -
Features
The FQB22P10TM is a power mosfet transistor with a drain-source voltage of 100 v, a drain current rating of 22 a, and a low on-resistance. it features a fast switching speed, low gate charge, and high ruggedness. this transistor is commonly used in power supply and motor control applications. -
Pinout
The FQB22P10TM is a mosfet transistor with 3 pins. the pinout functions are as follows: - pin 1: gate (g) - pin 2: drain (d) - pin 3: source (s) -
Manufacturer
The manufacturer of the FQB22P10TM is fairchild semiconductor. fairchild semiconductor is an american company that specializes in the design, development, and production of power and discrete semiconductors. -
Application Field
The FQB22P10TM is a power mosfet transistor. it can be used in various applications such as power supplies, motor control, audio amplification, and switching circuits. -
Package
The FQB22P10TM is a chip that comes in a to-263 package type. it is in a through-hole form and has a size of approximately 9.66mm x 11.56mm x 4.83mm.
Datasheet PDF
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