ON FQB5N90TM
N-Channel 900 V 5.4A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount TO-263 (D2PAK)
Brands: ON Semiconductor, LLC
Mfr.Part #: FQB5N90TM
Datasheet: FQB5N90TM Datasheet (PDF)
Package/Case: TO-263
Product Type: Transistors
RoHS Status:
Stock Condition: 3404 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomFQB5N90TM General Description
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 5.4A, 900V, RDS(on) = 2.3Ω(Max.) @VGS = 10 V, ID = 2.7A
- Low gate charge ( Typ. 31nC)
- Low Crss ( Typ. 13pF)
- 100% avalanche tested
- RoHS compliant
Application
- Lighting
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Source Content uid | FQB5N90TM | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | D2PAK-3 | Manufacturer Package Code | 418AJ |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 51 Weeks | Samacsys Manufacturer | onsemi |
Avalanche Energy Rating (Eas) | 660 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 900 V |
Drain Current-Max (ID) | 5.4 A | Drain-source On Resistance-Max | 2.3 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 245 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 158 W | Pulsed Drain Current-Max (IDM) | 21.6 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
feature-category | Power MOSFET | feature-material | |
feature-process-technology | DMOS | feature-configuration | Single |
feature-channel-mode | Enhancement | feature-channel-type | N |
feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 900 |
feature-maximum-gate-source-voltage-v | ±30 | feature-maximum-gate-threshold-voltage-v | 5 |
feature-maximum-continuous-drain-current-a | 5.4 | feature-maximum-drain-source-resistance-mohm | 2300@10V |
feature-typical-gate-charge-vgs-nc | 31@10V | feature-typical-gate-charge-10v-nc | 31 |
feature-typical-input-capacitance-vds-pf | 1200@25V | feature-typical-output-capacitance-pf | |
feature-maximum-power-dissipation-mw | 3130 | feature-packaging | Tape and Reel |
feature-rad-hard | feature-pin-count | 3 | |
feature-supplier-package | D2PAK | feature-standard-package-name1 | TO-263 |
feature-cecc-qualified | No | feature-esd-protection | |
feature-military | No | feature-aec-qualified | No |
feature-aec-qualified-number | feature-auto-motive | No | |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc | Yes |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FQB5N90TM chip is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications. It offers a low on-resistance, allowing efficient power handling, and has high reliability and robustness. The chip's advanced features and performance make it suitable for applications such as power supplies, motor control, and audio amplification.
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Features
The FQB5N90TM is a power MOSFET transistor with a drain-source voltage rating of 900V and a continuous drain current of 5A. It has a low gate charge and high switching speed, making it suitable for high-frequency applications. The transistor also has a low on-resistance and low capacitance, enabling efficient power management. -
Pinout
The FQB5N90TM is a MOSFET transistor with 3 pins. The pin-out configuration is Gate (G), Drain (D), and Source (S). The Gate pin is used to control the flow of current between the Drain and Source pins. -
Manufacturer
The manufacturer of the FQB5N90TM is Fairchild Semiconductor. It is a semiconductor company that designs, manufactures, and markets a wide range of power semiconductors, discrete semiconductors, and integrated circuits. -
Application Field
The FQB5N90TM is a power MOSFET transistor commonly used in high-voltage applications such as switch-mode power supplies, motor control, and lighting. Its high voltage rating and low on-state resistance make it suitable for various power conversion and control circuits that require efficient and reliable operation. -
Package
The FQB5N90TM chip is available in a TO-263 package type, commonly known as a D2PAK form. Its dimensions or size fall within the standard specifications for a TO-263 package, measuring approximately 10.28mm x 15.27mm x 4.57mm.
Datasheet PDF
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
The pricing is highly competitive for such high-quality electronic components.