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ON FQD19N10LTM
N-Channel 100 V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252AA
Brands: ON Semiconductor, LLC
Mfr.Part #: FQD19N10LTM
Datasheet: FQD19N10LTM Datasheet (PDF)
Package/Case: TO-252
Product Type: Transistors
FQD19N10LTM General Description
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
- 15.6A, 100V, RDS(on) = 100mΩ(Max.) @VGS = 10 V, ID = 7.8A
- Low gate charge ( Typ. 14nC)
- Low Crss ( Typ. 35pF)
- 100% avalanche tested
Application
- LCD TV
- PDP TV
- LED TV
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | FQD19N10LTM | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Package Description | DPAK-3 | Manufacturer Package Code | 369AS |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Factory Lead Time | 4 Weeks | Samacsys Manufacturer | onsemi |
| Application | SWITCHING | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Surface Mount | YES |
| Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Element Material | SILICON | feature-category | Power MOSFET |
| feature-material | feature-process-technology | DMOS | |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 100 | feature-maximum-gate-source-voltage-v | ±20 |
| feature-maximum-gate-threshold-voltage-v | feature-maximum-continuous-drain-current-a | 15.6 | |
| feature-maximum-drain-source-resistance-mohm | 100@10V | feature-typical-gate-charge-vgs-nc | 14@5V |
| feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 670@25V | |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 2500 | |
| feature-packaging | Tape and Reel | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | DPAK |
| feature-standard-package-name1 | TO-252 | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FQD19N10LTM is a power MOSFET chip commonly used in electronic devices and circuits. It is designed to handle high current and voltage levels, making it suitable for power management applications. The chip offers low on-resistance and efficient switching characteristics to ensure optimal performance. With its compact size and durable construction, the FQD19N10LTM chip is widely used in various industries for power switching and amplification purposes.
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Equivalent
Some equivalent products to the FQD19N10LTM chip include IRF3710, FQP19N10L, FDC855N, and IRF9540. These chips also have similar specifications and functions in various applications. -
Features
The FQD19N10LTM is a power MOSFET transistor with a drain-source voltage of 100V, a continuous drain current of 19A, and a low on-resistance. It is designed for high-efficiency applications and has a compact TO-252 package. Additionally, it has a fast switching speed and is suitable for use in power management circuits. -
Pinout
The FQD19N10LTM is a MOSFET transistor with a TO-252 package. It has 3 pins: gate (G), drain (D), and source (S). The gate pin is used to control the flow of current between the drain and source, making it suitable for power switching applications. -
Manufacturer
The manufacturer of the FQD19N10LTM is Fairchild Semiconductor. Fairchild Semiconductor is a global company that designs, manufactures, and markets power management and discrete semiconductor solutions for various industries, including automotive, industrial, consumer electronics, and telecommunication. -
Application Field
The FQD19N10LTM is a field-effect transistor (FET) typically used in power management applications such as switch mode power supplies, motor controls, LED lighting, and other high-power devices. It offers low on-resistance and high efficiency, making it suitable for various applications that require reliable power control and management. -
Package
The FQD19N10LTM chip is packaged in a DPAK (TO-252) form. Its size is 6.6mm x 9.2mm x 2.3mm.
Datasheet PDF
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