L2N7002DW1T1G
Trans MOSFET Array Dual N-CH 60V ±0.115A 6-Pin SC-88 T/R
Brands: LESHAN RADIO CO LTD
Mfr.Part #: L2N7002DW1T1G
Datasheet: L2N7002DW1T1G Datasheet (PDF)
Package/Case: SOT363
RoHS Status:
Stock Condition: 9230 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
20 | $0.022 | $0.440 |
200 | $0.017 | $3.400 |
600 | $0.015 | $9.000 |
3000 | $0.014 | $42.000 |
9000 | $0.012 | $108.000 |
21000 | $0.012 | $252.000 |
In Stock:9230 PCS
L2N7002DW1T1G General Description
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 419B-02, SC-88, 6 PIN
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | LESHAN RADIO CO LTD | Package Description | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code | ECCN Code | EAR99 | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 0.115 A | Drain-source On Resistance-Max | 7.5 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 5 pF |
JESD-30 Code | R-PDSO-G6 | Number of Elements | 2 |
Number of Terminals | 6 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 0.38 W | Surface Mount | YES |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Element Material | SILICON |
Product Category | MOSFET | Technology | Si |
Brand | onsemi | Product Type | MOSFET |
Subcategory | MOSFETs |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The L2N7002DW1T1G is a MOSFET chip manufactured by On Semiconductor. It is used for switching electronic signals in low power applications such as portable devices and battery-powered systems. The chip has a voltage rating of 60V and a low on-resistance, making it ideal for use in power management circuits and other energy-efficient applications.
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Equivalent
The equivalent products of L2N7002DW1T1G chip are: 1. AO3401A 2. 2N7002LT1G 3. MMBT7002LT1G 4. ZXMN2A01E6TA 5. FDN338PZ These are all N-channel MOSFETs with similar specifications and package sizes. -
Features
The L2N7002DW1T1G is a small logic-level N-channel MOSFET transistor with a maximum drain-source voltage of 60V, a maximum continuous drain current of 0.115A, and a low threshold voltage of 1.8V. It is ideal for use in various electronics applications that require fast switching speeds and low power consumption. -
Pinout
The L2N7002DW1T1G is a dual N-channel MOSFET with a pin count of 6. Pin 1 and 6 are the source pins of each MOSFET while pin 2 and 5 are the gate pins and pin 3 and 4 are the drain pins. It is typically used in low power consumption and DC/DC converter applications. -
Manufacturer
The manufacturer of the L2N7002DW1T1G is ON Semiconductor. ON Semiconductor is a global semiconductor supplier specializing in power management, analog, and sensor technology solutions. They provide innovative products for a variety of industries including automotive, industrial, and consumer electronics. -
Application Field
The L2N7002DW1T1G is commonly used as a low-power switch in various applications such as portable electronics, battery management systems, and small signal switching. It's often found in circuit designs requiring efficient control of low-voltage signals or power. -
Package
The L2N7002DW1T1G is a MOSFET transistor. It comes in a SOT-363 package, which is a small surface-mount package with three leads. The dimensions are typically around 2.00mm x 1.25mm x 1.00mm.
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