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ON FDC637AN
N-Channel 20 V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Brands: ON
Mfr.Part #: FDC637AN
Datasheet: FDC637AN Datasheet (PDF)
Package/Case: SOT23-6
RoHS Status:
Stock Condition: 4250 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.153 | $0.153 |
| 10 | $0.124 | $1.240 |
| 30 | $0.112 | $3.360 |
| 100 | $0.096 | $9.600 |
| 500 | $0.089 | $44.500 |
| 1000 | $0.081 | $81.000 |
In Stock:4250 PCS
FDC637AN General Description
This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.
Features
- 6.2 A, 20 V
RDS(on) = 0.024 Ω @ VGS = 4.5 V
RDS(on) = 0.032 Ω @ VGS = 2.5 V - Fast switching speed.
- Low gate charge (10.5nC typical).
- High performance trench technology for extremelylow RDS(ON) .
- SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).
Application
- This product is general usage and suitable for many different applications.
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Product Category | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SSOT-6 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 6.2 A | Rds On - Drain-Source Resistance | 24 mOhms |
| Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
| Qg - Gate Charge | 16 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.6 W |
| Channel Mode | Enhancement | Tradename | PowerTrench |
| Series | FDC637AN | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 13 ns |
| Forward Transconductance - Min | 7.4 S | Height | 1.1 mm |
| Length | 2.9 mm | Product | MOSFET Small Signals |
| Product Type | MOSFET | Rise Time | 13 ns |
| Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | MOSFET |
| Typical Turn-Off Delay Time | 26 ns | Typical Turn-On Delay Time | 9 ns |
| Width | 1.6 mm | Part # Aliases | FDC637AN_NL |
| Unit Weight | 0.001270 oz |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FDC637AN chip is a specially designed component for capacitive sensing applications. It offers high sensitivity and accuracy in detecting touch and proximity events. The chip utilizes advanced signal processing techniques to provide reliable touch detection in various environments. With low power consumption and compact size, it is suitable for integration into a wide range of devices, including smartphones, tablets, and home appliances.
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Equivalent
The equivalent products of FDC637AN chip are FDC637BN, FDC637KN, FDC637MN, FDC637VN, and FDC637TN chips. -
Features
The FDC637AN is a power management IC that features integrated drivers for controlling an external N-Channel MOSFET. It offers protection against overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is designed for use in applications such as load switches, power supplies, and battery management systems, providing efficient and reliable power management capabilities. -
Pinout
The FDC637AN is a dual N-channel MOSFET with a pin count of 8. Pin functions include gate control, drain terminals, and source terminals for both channels. More specifically, Pin 1 is the gate control for Channel 1, and Pin 8 is the gate control for Channel 2. -
Manufacturer
The FDC637AN is manufactured by Fairchild Semiconductor, which is a globally recognized semiconductor company. -
Application Field
The FDC637AN is a linear Hall effect sensor that can be used in various applications such as automotive systems (position sensing, throttle control), industrial automation (position sensing, motor control), and consumer electronics (smartphone compass, gaming controllers). -
Package
The FDC637AN chip has a package type of DIP (Dual In-line Package), a form factor of through-hole, and a standard size as per DIP-8 specifications.
We provide high quality products, thoughtful service and after sale guarantee
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Minimum order quantity starts from 1pcs.
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