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ON FCB070N65S3 48HRS

MOSFET SuperFET3 650V 70mOhm

ISO14001 ISO9001 DUNS

Brands: ON

Mfr.Part #: FCB070N65S3

Datasheet: FCB070N65S3 Datasheet (PDF)

Package/Case: TO263

RoHS Status:

Stock Condition: 171 pcs, New Original

Product Type: Discrete Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $4.205 $4.205
10 $3.690 $36.900
30 $3.384 $101.520
100 $3.074 $307.400
500 $2.931 $1465.500
800 $2.867 $2293.600

In Stock:171 PCS

- +

Quick Quote

Please submit RFQ for FCB070N65S3 or email to us: Email: [email protected], we will contact you within 12 hours.

FCB070N65S3 General Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

FCB070N65S3

Features

  • 700 V @ TJ = 150 oC
  • Ultra Low Gate Charge (Typ. Qg = 78 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
  • Optimized Capacitance
  • Typ. RDS(on) = 62 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant
  • Wave soldering guarantee
FCB070N65S3

Application

  • Telecommunication
  • Cloud system
  • Industrial

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 44 A
Rds On - Drain-Source Resistance 70 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V Qg - Gate Charge 78 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 312 W Channel Mode Enhancement
Tradename SuperFET III Series FCB070N65S3
Brand onsemi / Fairchild Configuration Single
Fall Time 16 ns Forward Transconductance - Min 29 S
Height 4.83 mm Length 10.67 mm
Product Type MOSFET Rise Time 52 ns
Factory Pack Quantity 800 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 89 ns
Typical Turn-On Delay Time 26 ns Width 9.65 mm
Unit Weight 0.139332 oz

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • FCB070N65S3 is a power MOSFET chip designed for high-performance applications. It offers low conduction and switching losses, enabling efficient power management in various electronic devices. The chip features a high current rating, low on-resistance, and a robust design. Overall, FCB070N65S3 is suitable for power electronics, motor control, and other applications where high efficiency and reliability are crucial.
  • Equivalent

    The FCB070N65S3 chip's equivalent products include IRFP064N, IRFP0710, TP65N06, STP65NF06, and AOB245L.
  • Features

    The FCB070N65S3 is a high voltage, fast switching N-channel power MOSFET. It has a drain-source voltage rating of 650V, a continuous drain current of 70A, and a low on-resistance of 0.07Ω. Additionally, it features a rugged and reliable design, making it suitable for a variety of power electronic applications.
  • Pinout

    The FCB070N65S3 is an N-channel power MOSFET with a pin count of 7. The pin functions are as follows: 1. Gate 2. Source 3. Drain 4. Drain 5. Source 6. No connection 7. Drain.
  • Manufacturer

    Infineon Technologies AG is the manufacturer of the FCB070N65S3. It is a multinational semiconductor company that specializes in manufacturing and selling various electronic components and systems.
  • Application Field

    The FCB070N65S3 is a power MOSFET transistor designed for use in high power applications, such as power supplies, motor control, and industrial automation. It can also be used in renewable energy systems, electric vehicle charging systems, and other high voltage applications.
  • Package

    The FCB070N65S3 chip package type is TO-263-3 (D2PAK), form is a surface mount and its size is approximately 10mm x 10mm.

We provide high quality products, thoughtful service and after sale guarantee

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  • quantity

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