ON FCB070N65S3
MOSFET SuperFET3 650V 70mOhm
Brands: ON
Mfr.Part #: FCB070N65S3
Datasheet: FCB070N65S3 Datasheet (PDF)
Package/Case: TO263
RoHS Status:
Stock Condition: 171 pcs, New Original
Product Type: Discrete Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $4.205 | $4.205 |
10 | $3.690 | $36.900 |
30 | $3.384 | $101.520 |
100 | $3.074 | $307.400 |
500 | $2.931 | $1465.500 |
800 | $2.867 | $2293.600 |
In Stock:171 PCS
FCB070N65S3 General Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features
- 700 V @ TJ = 150 oC
- Ultra Low Gate Charge (Typ. Qg = 78 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
- Optimized Capacitance
- Typ. RDS(on) = 62 mΩ
- 100% Avalanche Tested
- RoHS Compliant
- Wave soldering guarantee
Application
- Telecommunication
- Cloud system
- Industrial
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | D2PAK-3 (TO-263-3) |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 44 A |
Rds On - Drain-Source Resistance | 70 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 78 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 312 W | Channel Mode | Enhancement |
Tradename | SuperFET III | Series | FCB070N65S3 |
Brand | onsemi / Fairchild | Configuration | Single |
Fall Time | 16 ns | Forward Transconductance - Min | 29 S |
Height | 4.83 mm | Length | 10.67 mm |
Product Type | MOSFET | Rise Time | 52 ns |
Factory Pack Quantity | 800 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 89 ns |
Typical Turn-On Delay Time | 26 ns | Width | 9.65 mm |
Unit Weight | 0.139332 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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FCB070N65S3 is a power MOSFET chip designed for high-performance applications. It offers low conduction and switching losses, enabling efficient power management in various electronic devices. The chip features a high current rating, low on-resistance, and a robust design. Overall, FCB070N65S3 is suitable for power electronics, motor control, and other applications where high efficiency and reliability are crucial.
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Equivalent
The FCB070N65S3 chip's equivalent products include IRFP064N, IRFP0710, TP65N06, STP65NF06, and AOB245L. -
Features
The FCB070N65S3 is a high voltage, fast switching N-channel power MOSFET. It has a drain-source voltage rating of 650V, a continuous drain current of 70A, and a low on-resistance of 0.07Ω. Additionally, it features a rugged and reliable design, making it suitable for a variety of power electronic applications. -
Pinout
The FCB070N65S3 is an N-channel power MOSFET with a pin count of 7. The pin functions are as follows: 1. Gate 2. Source 3. Drain 4. Drain 5. Source 6. No connection 7. Drain. -
Manufacturer
Infineon Technologies AG is the manufacturer of the FCB070N65S3. It is a multinational semiconductor company that specializes in manufacturing and selling various electronic components and systems. -
Application Field
The FCB070N65S3 is a power MOSFET transistor designed for use in high power applications, such as power supplies, motor control, and industrial automation. It can also be used in renewable energy systems, electric vehicle charging systems, and other high voltage applications. -
Package
The FCB070N65S3 chip package type is TO-263-3 (D2PAK), form is a surface mount and its size is approximately 10mm x 10mm.
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