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ON FCPF11N60F
N-Channel 600 V 11A (Tc) 36W (Tc) Through Hole TO-220F-3
Brands: ON Semiconductor, LLC
Mfr.Part #: FCPF11N60F
Datasheet: FCPF11N60F Datasheet (PDF)
Package/Case: TO-220F
Product Type: Transistors
FCPF11N60F General Description
SuperFET® MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super-FET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Features
- 600 V @ TJ = 150°C
- Typ. RDS(on) = 320 mΩ
- Fast Recovery Type (trr = 120 ns)
- Ultra Low Gate Charge (Typ. Qg = 40 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
- 100% Avalanche Tested
- RoHS compliant
Application
- AC-DC Power Supplies
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 11 A |
| Rds On - Drain-Source Resistance: | 380 mOhms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | Qg - Gate Charge: | 52 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 125 W | Channel Mode: | Enhancement |
| Tradename: | SuperFET FRFET | Series: | FCPF11N60F |
| Packaging: | Tube | Brand: | onsemi / Fairchild |
| Configuration: | Single | Fall Time: | 56 ns |
| Forward Transconductance - Min: | 9.7 S | Height: | 16.07 mm |
| Length: | 10.36 mm | Product Type: | MOSFET |
| Rise Time: | 98 ns | Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Type: | N-Channel MOSFET | Typical Turn-Off Delay Time: | 119 ns |
| Typical Turn-On Delay Time: | 34 ns | Width: | 4.9 mm |
| Unit Weight: | 0.068784 oz | feature-category | Power MOSFET |
| feature-material | feature-process-technology | SuperFET | |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 600 | feature-maximum-gate-source-voltage-v | ±30 |
| feature-maximum-gate-threshold-voltage-v | 5 | feature-maximum-continuous-drain-current-a | 11 |
| feature-maximum-drain-source-resistance-mohm | 380@10V | feature-typical-gate-charge-vgs-nc | 40@10V |
| feature-typical-gate-charge-10v-nc | 40 | feature-typical-input-capacitance-vds-pf | 1148@25V |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 36000 | |
| feature-packaging | Tube | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | TO-220FP |
| feature-standard-package-name1 | TO | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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FCPF11N60F is a MOSFET chip primarily used for power switching applications. It can handle a maximum voltage of 600V and a continuous drain current of 11A. This chip is designed for efficient power conversion and features low on-resistance, high-speed switching capabilities, and low gate charge. It also includes built-in protection features such as over-temperature and short-circuit protection.
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Equivalent
There are currently no direct equivalent products to the FCPF11N60F chip. However, similar alternatives with comparable specifications and performance can be found from other manufacturers, such as Infineon's CoolMOS, Fairchild's SuperFET, or ON Semiconductor's High Voltage Power MOSFETs. -
Features
The FCPF11N60F is a power MOSFET with a drain-source voltage rating of 600V and a current rating of 11A. It features low on-resistance, fast switching speed, and high avalanche energy capability. It is housed in a TO-220F package, making it suitable for various industrial and consumer applications requiring high-performance power switching. -
Pinout
The FCPF11N60F is a power MOSFET with a pin count of 3. The three pins are Gate, Source, and Drain. The Gate pin controls the switching of the MOSFET, while the Source and Drain pins control the flow of current through the device. -
Manufacturer
The manufacturer of the FCPF11N60F is Fairchild Semiconductor. It is a global company that specializes in the design, development, and production of power semiconductors and integrated circuits. -
Application Field
The FCPF11N60F is a high-voltage Power MOSFET suitable for various applications, including power supplies, motor control, DC-DC converters, and inverters. -
Package
The FCPF11N60F chip is available in a TO-220F package type, has a single form, and its size is approximately 10.16mm x 3.81mm x 20.57mm.
Datasheet PDF
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