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ON FCP190N65F
N-Channel 650 V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3
Brands: ON Semiconductor, LLC
Mfr.Part #: FCP190N65F
Datasheet: FCP190N65F Datasheet (PDF)
Package/Case: TO-220
Product Type: Transistors
FCP190N65F General Description
SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Features
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 168 mΩ
- Ultra Low Gate Charge (Typ. Qg = 60 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 186 pF)
- 100% Avalanche Tested
- RoHS Compliant
Application
- AC-DC Power Supplies
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V | Id - Continuous Drain Current: | 20.6 A |
| Rds On - Drain-Source Resistance: | 190 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V | Qg - Gate Charge: | 60 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 208 W | Channel Mode: | Enhancement |
| Tradename: | SuperFET II FRFET | Series: | FCP190N65F |
| Packaging: | Tube | Brand: | onsemi / Fairchild |
| Configuration: | Single | Fall Time: | 4.2 ns |
| Forward Transconductance - Min: | 18 S | Height: | 16.3 mm |
| Length: | 10.67 mm | Product Type: | MOSFET |
| Rise Time: | 11 ns | Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 62 ns | Typical Turn-On Delay Time: | 25 ns |
| Width: | 4.7 mm | Unit Weight: | 0.068784 oz |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | SuperFET II | feature-configuration | Single |
| feature-channel-mode | Enhancement | feature-channel-type | N |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 650 |
| feature-maximum-gate-source-voltage-v | ±20 | feature-maximum-gate-threshold-voltage-v | 5 |
| feature-maximum-continuous-drain-current-a | 20.6 | feature-maximum-drain-source-resistance-mohm | 190@10V |
| feature-typical-gate-charge-vgs-nc | 60@10V | feature-typical-gate-charge-10v-nc | 60 |
| feature-typical-input-capacitance-vds-pf | 2425@25V | feature-typical-output-capacitance-pf | |
| feature-maximum-power-dissipation-mw | 208000 | feature-packaging | Tube |
| feature-rad-hard | feature-pin-count | 3 | |
| feature-supplier-package | TO-220 | feature-standard-package-name1 | TO |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | Yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FCP190N65F is an integrated circuit chip designed for power electronics applications, particularly in the field of renewable energy systems. It provides efficient power conversion and control, supporting high voltage and current operation. This chip offers a compact and reliable solution for various power electronics designs, including solar inverters and motor drives, among others.
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Equivalent
The equivalent products of FCP190N65F chip are IRFP4110, STW10NK90Z, and AOT290L. -
Features
The FCP190N65F is a field-stop trench IGBT designed for high-speed switching applications. It offers low conduction and switching losses, high ruggedness, and short circuit withstand capability. It has a voltage rating of 650V, a current rating of 190A, and is suitable for use in motor control, solar energy, and other power electronic applications. -
Pinout
The FCP190N65F is a power MOSFET transistor with 3 pins. Pin 1 is the gate, pin 2 is the drain, and pin 3 is the source. The function of this device is to control the flow of current between the drain and the source when a voltage is applied to the gate. -
Manufacturer
The manufacturer of the FCP190N65F is Fairchild Semiconductor Corporation, which is a global company specializing in the development and production of power management and analog semiconductor devices. -
Application Field
The FCP190N65F is a power MOSFET transistor that is commonly used in various applications such as switch mode power supplies, motor control, and automotive systems. Its low on-resistance and fast switching capabilities make it suitable for high-performance and energy-efficient designs. -
Package
The FCP190N65F chip has a package type of TO-220F, a form of N-Channel MOSFET, and a size of 10.4mm x 9.9mm.
Datasheet PDF
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