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ON NTD25P03LT4G
MOSFET -30V -25A P-Channel
Brands: ON Semiconductor, LLC
Mfr.Part #: NTD25P03LT4G
Datasheet: NTD25P03LT4G Datasheet (PDF)
Package/Case: TO-252
RoHS Status:
Stock Condition: 2896 pcs, New Original
Product Type: Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.007 | $1.007 |
| 10 | $0.834 | $8.340 |
| 30 | $0.740 | $22.200 |
| 100 | $0.633 | $63.300 |
| 500 | $0.586 | $293.000 |
| 1000 | $0.564 | $564.000 |
In Stock:2896 PCS
NTD25P03LT4G General Description
Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source-to-drain diode recovery time is comparable to a discrete fast recovery diode.
Features
- RoHS Compliant
Application
- PWM Motor Controls
- Power Supplies
- Converters
- Bridge Circuits
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | NTD25P03LT4G | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | Package Description | DPAK-3 |
| Pin Count | 3 | Manufacturer Package Code | 369C |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 | Factory Lead Time | 50 Weeks |
| Samacsys Manufacturer | onsemi | Additional Feature | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Rating (Eas) | 200 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (ID) | 25 A | Drain-source On Resistance-Max | 0.08 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 75 W |
| Pulsed Drain Current-Max (IDM) | 75 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
| Terminal Form | GULL WING | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 40 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Package Category | TO-XXX (Inc. DPAK) |
| Released Date | Jan 25, 2016 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NTD25P03LT4G is a power MOSFET chip used for switching applications in power management circuits. It has a high voltage rating of 30V and a continuous drain current of 25A. The chip offers low on-resistance, high switching speed, and low gate charge, making it suitable for various applications such as power supplies, motor control, and LED lighting.
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Equivalent
Some equivalent products to the NTD25P03LT4G chip include YTD25P03LT4G, P3N25P03LT, and IPP03N03LA G. -
Features
The features of NTD25P03LT4G include a maximum drain current of 25A, a drain-source voltage of -30V, and an on-resistance of 41.5mΩ. It also has low gate-source threshold voltage, a compact TO-252 package, and is suitable for use in various power management applications. -
Pinout
The NTD25P03LT4G is a Power MOSFET with a pin count of 3. The functions of its pins are as follows: 1. Source (S): It is the terminal connected to the ground and serves as the reference point for the MOSFET. 2. Drain (D): It is the output terminal and conducts the current flow when the MOSFET is turned on. 3. Gate (G): It controls the MOSFET's conductivity and determines whether it is turned on or off. -
Manufacturer
The manufacturer of the NTD25P03LT4G is ON Semiconductor. It is a multinational semiconductor company specializing in power management and precision analog devices. ON Semiconductor produces a wide range of products for various applications, including automotive, industrial, communication, and consumer electronics industries. -
Application Field
The NTD25P03LT4G is a power MOSFET transistor that is commonly used in various electronic applications. Its application areas include power management systems, battery charging circuits, motor control and driver circuits, switch mode power supplies, and other high voltage and high current applications. -
Package
The NTD25P03LT4G chip has a TO-252AA package type, with a surface mount form. Its size is typically 6.21mm x 6.21mm.
Datasheet PDF
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