ON FCH104N60F
N-Channel 600 V 37A (Tc) 357W (Tc) Through Hole TO-247-3
Brands: ON
Mfr.Part #: FCH104N60F
Datasheet: FCH104N60F Datasheet (PDF)
Package/Case: TO-247
RoHS Status:
Stock Condition: 126 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
Qty | Unit Price | Ext Price |
---|---|---|
1 | $5.610 | $5.610 |
10 | $4.923 | $49.230 |
30 | $4.514 | $135.420 |
100 | $4.102 | $410.200 |
500 | $3.442 | $1721.000 |
1000 | $3.357 | $3357.000 |
In Stock:126 PCS
FCH104N60F General Description
SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Features
- RDS(on) = 104 mΩ (Max)
- Ultra Low Gate Charge (Typ. Qg = 107 nC)
- Low Effective Output Capacitance
- 100% AvalancheTested
- RoHS Compliant
Application
- This product is general usage and suitable for many different applications
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 37 A |
Rds On - Drain-Source Resistance | 104 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 5 V | Qg - Gate Charge | 139 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 357 W | Channel Mode | Enhancement |
Tradename | SuperFET II FRFET | Series | FCH104N60F |
Brand | onsemi / Fairchild | Configuration | Single |
Fall Time | 20 ns | Forward Transconductance - Min | 47 S |
Height | 20.82 mm | Length | 15.87 mm |
Product Type | MOSFET | Rise Time | 58 ns |
Factory Pack Quantity | 30 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 206 ns |
Typical Turn-On Delay Time | 78 ns | Width | 4.82 mm |
Unit Weight | 0.211644 oz |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The FCH104N60F chip is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage applications. It features a low on-resistance, allowing for efficient power handling. The chip is suitable for use in various electronic devices, such as power supplies, inverters, and motor control circuits, providing reliable and efficient power switching capabilities.
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Equivalent
The equivalent products of the FCH104N60F chip are the STW104N60F7, IRF1405, and IXTN104N60F7 chips. -
Features
The FCH104N60F is a power MOSFET semiconductor device that offers a low on-resistance and high switching efficiency. It operates at a voltage of 600V and can handle continuous currents up to 110A. The device is designed for use in various power switching applications, such as motor control, inverters, and switched mode power supplies. -
Pinout
The FCH104N60F is a power MOSFET with a TO-247 package. It has three pins: gate (G), drain (D), and source (S). The gate pin controls the switching of the MOSFET, the drain pin connects to the load, and the source pin acts as a common reference point for the gate and drain. -
Manufacturer
Infineon Technologies AG is the manufacturer of the FCH104N60F. It is a German semiconductor manufacturing company that specializes in the production of power semiconductors and system solutions for advanced technologies, including automotive, industrial, and digital security applications. -
Application Field
The FCH104N60F is a power MOSFET transistor that is commonly used in high-frequency switching applications such as power supplies, inverters, motor drives, and lighting systems. Its low on-resistance and fast switching capability make it suitable for high-efficiency power conversion designs. -
Package
The package type of the FCH104N60F chip is TO-247, which is a large and robust package commonly used for high-power devices. The form of the chip is a discrete power transistor. The size of the FCH104N60F chip is approximately 15.5mm x 21.5mm x 5.86mm.
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