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ON FCH104N60F 48HRS

N-Channel 600 V 37A (Tc) 357W (Tc) Through Hole TO-247-3

ISO14001 ISO9001 DUNS

Brands: ON

Mfr.Part #: FCH104N60F

Datasheet: FCH104N60F Datasheet (PDF)

Package/Case: TO-247

RoHS Status:

Stock Condition: 126 pcs, New Original

Product Type: MOSFET

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $5.610 $5.610
10 $4.923 $49.230
30 $4.514 $135.420
100 $4.102 $410.200
500 $3.442 $1721.000
1000 $3.357 $3357.000

In Stock:126 PCS

- +

Quick Quote

Please submit RFQ for FCH104N60F or email to us: Email: [email protected], we will contact you within 12 hours.

FCH104N60F General Description

SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

FCH104N60F

Features

  • RDS(on) = 104 mΩ (Max)
  • Ultra Low Gate Charge (Typ. Qg = 107 nC)
  • Low Effective Output Capacitance
  • 100% AvalancheTested
  • RoHS Compliant
FCH104N60F

Application

  • This product is general usage and suitable for many different applications

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V Id - Continuous Drain Current 37 A
Rds On - Drain-Source Resistance 104 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 5 V Qg - Gate Charge 139 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 357 W Channel Mode Enhancement
Tradename SuperFET II FRFET Series FCH104N60F
Brand onsemi / Fairchild Configuration Single
Fall Time 20 ns Forward Transconductance - Min 47 S
Height 20.82 mm Length 15.87 mm
Product Type MOSFET Rise Time 58 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 206 ns
Typical Turn-On Delay Time 78 ns Width 4.82 mm
Unit Weight 0.211644 oz

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The FCH104N60F chip is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage applications. It features a low on-resistance, allowing for efficient power handling. The chip is suitable for use in various electronic devices, such as power supplies, inverters, and motor control circuits, providing reliable and efficient power switching capabilities.
  • Equivalent

    The equivalent products of the FCH104N60F chip are the STW104N60F7, IRF1405, and IXTN104N60F7 chips.
  • Features

    The FCH104N60F is a power MOSFET semiconductor device that offers a low on-resistance and high switching efficiency. It operates at a voltage of 600V and can handle continuous currents up to 110A. The device is designed for use in various power switching applications, such as motor control, inverters, and switched mode power supplies.
  • Pinout

    The FCH104N60F is a power MOSFET with a TO-247 package. It has three pins: gate (G), drain (D), and source (S). The gate pin controls the switching of the MOSFET, the drain pin connects to the load, and the source pin acts as a common reference point for the gate and drain.
  • Manufacturer

    Infineon Technologies AG is the manufacturer of the FCH104N60F. It is a German semiconductor manufacturing company that specializes in the production of power semiconductors and system solutions for advanced technologies, including automotive, industrial, and digital security applications.
  • Application Field

    The FCH104N60F is a power MOSFET transistor that is commonly used in high-frequency switching applications such as power supplies, inverters, motor drives, and lighting systems. Its low on-resistance and fast switching capability make it suitable for high-efficiency power conversion designs.
  • Package

    The package type of the FCH104N60F chip is TO-247, which is a large and robust package commonly used for high-power devices. The form of the chip is a discrete power transistor. The size of the FCH104N60F chip is approximately 15.5mm x 21.5mm x 5.86mm.

We provide high quality products, thoughtful service and after sale guarantee

  • Product

    We have rich products, can meet your various needs.

  • quantity

    Minimum order quantity starts from 1pcs.

  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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