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ON NTZD3155CT2G
Mosfet Array 20V 540mA, 430mA 250mW Surface Mount SOT-563
Brands: ON
Mfr.Part #: NTZD3155CT2G
Datasheet: NTZD3155CT2G Datasheet (PDF)
Package/Case: SOT-563
RoHS Status:
Stock Condition: 3273 pcs, New Original
Product Type: Transistors
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1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $0.369 | $0.369 |
| 10 | $0.249 | $2.490 |
| 30 | $0.188 | $5.640 |
| 100 | $0.130 | $13.000 |
| 500 | $0.093 | $46.500 |
| 1000 | $0.074 | $74.000 |
In Stock:3273 PCS
NTZD3155CT2G General Description
Mosfet Array 20V 540mA, 430mA 250mW Surface Mount SOT-563
Features
- Leading Trench Technology for Low RDS(on) Performance
- High Efficiency System Performance
- Low Threshold Voltage
- ESD Protected Gate
- Small Footprint 1.6 x 1.6 mm
- RoHS Compliant
Application
- DC-DC Conversion Circuits
- Load/Power Switching with Level Shift
- Single or Dual Cell Li-Ion Battery Operated Systems
- High Speed Circuits
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Status | Active | CAD Models | |
| Compliance | PbAHP | Package Type | SOT-563 |
| Case Outline | 463A-01 | MSL Type | 1 |
| MSL Temp (°C) | 260 | Container Type | REEL |
| Container Qty. | 4000 | ON Target | N |
| Channel Polarity | Complementary | Configuration | Dual |
| V(BR)DSS Min (V) | ±20 | VGS Max (V) | 6 |
| VGS(th) Max (V) | 1 | ID Max (A) | 0.54 |
| PD Max (W) | 0.25 | RDS(on) Max @ VGS = 2.5 V (mΩ) | N: 500.00, P: 600.00 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | N:400.00, P: 500.00 | Qg Typ @ VGS = 4.5 V (nC) | 0.7 |
| Qg Typ @ VGS = 10 V (nC) | 1.5 | Ciss Typ (pF) | N: 80, P: 105 |
| Pricing ($/Unit) | $0.0649 |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The NTZD3155CT2G chip is a dual N-channel enhancement mode MOSFET transistor manufactured by ON Semiconductor. It is designed for power management and load switching applications in portable devices, USB hubs, and battery chargers. With a low on-resistance and compact surface mount package, it provides efficient switching performance and helps in reducing power losses and improving overall system reliability.
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Equivalent
There aren't any specific equivalent products for the NTZD3155CT2G chip. However, one could look for alternative N-channel enhancement mode MOSFETs with similar specifications and characteristics as the NTZD3155CT2G chip to suit their specific needs. -
Features
NTZD3155CT2G is a N-channel enhancement mode Field-Effect Transistor (FET) designed for low voltage applications. It has a voltage rating of 20V and a continuous drain current of 3A. The transistor features low on-resistance, high speed switching capabilities, and is suitable for use in battery charger, power management, and load switching applications. -
Pinout
The NTZD3155CT2G is a dual N-channel MOSFET transistor with a SOT-23 package. It has 3 pins: Gate (G), Drain (D), and Source (S). The gate pin controls the flow of current between the drain and source pins. -
Manufacturer
The manufacturer of the NTZD3155CT2G is ON Semiconductor. It is a multinational semiconductor company that designs, manufactures, and sells a range of semiconductor components and devices for various applications, including power management, analog, and sensor products. -
Application Field
The NTZD3155CT2G is a dual N-channel MOSFET transistor commonly used in switch-mode power supplies, battery chargers, and other power management applications. It is suitable for low voltage and high-frequency operation, making it ideal for portable and compact devices. -
Package
The NTZD3155CT2G chip is available in a DFN (Dual Flat No-Lead) package, with a form of 3.3mm x 3.3mm and a size of 10mm².
Datasheet PDF
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products
The quality of the products is exceptional, and the prices are very competitive.