Infineon IPW60R037CSFD

Part points

• The IPW60R037CSFD is a power metal-oxide-semiconductor field-effect transistor (MOSFET) chip designed for use in high-power applications. It features low on-state resistance and high power handling capabilities, making it ideal for applications such as power supplies, motor control, and inverters. The chip is highly efficient and reliable, offering excellent performance in demanding environments.

• Equivalent

  The equivalent products of the IPW60R037CSFD chip include Infineon's CoolMOS P7, Toshiba's TK160N65Z, and TI's CSD18510Q5B. These products offer similar performance specifications and can be used as alternatives to the IPW60R037CSFD chip in various applications.

• Features

  1. MOSFET transistor 2. N-channel, 600V 3. Advanced 7th Gen trench process technology 4. Low on-resistance of 0.037 ohms 5. High-speed switching performance 6. High thermal efficiency 7. Suitable for use in power factor correction circuits, telecoms, and industrial applications.

• Pinout

  The IPW60R037CSFD is a power transistor with a pin count of 3. Its functions include switching and amplifying power in electronic circuits, typically used in high power applications such as motor control and power supplies. The pins are typically labeled as Gate, Drain, and Source.

• Manufacturer

  Infineon Technologies is the manufacturer of the IPW60R037CSFD. It is a German semiconductor manufacturing company that produces a wide range of power semiconductors, microcontrollers, and sensors for various applications including automotive, industrial, and consumer electronics.

• Application Field

  The IPW60R037CSFD is commonly used in power supply applications, motor control, inverters, and welding equipment. It is suitable for industrial applications that require high efficiency and reliability, such as in industrial drives, uninterruptible power supplies (UPS), and renewable energy systems.

• Package

  The IPW60R037CSFD chip is a power MOSFET in a package type of TO-247. It is in the form of a discrete semiconductor component and has a size of 10mm x 17.75mm x 4.5mm.