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Infineon IPL60R104C7

Name: IPL60R104C7
Rating: 4.5 (10 reviews)

MOSFET HIGH POWER_NEW

Brands: Infineon Technologies Corporation

Mfr.Part #: IPL60R104C7

Datasheet: IPL60R104C7 Datasheet (PDF)

Package/Case: ThinPAK 8x8

RoHS Status:

Stock Condition: 2310 pcs, New Original

Product Type: Power Field-Effect Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty	Unit Price	Ext Price
1	$11.694	$11.694
10	$9.813	$98.130
30	$8.938	$268.140
100	$8.206	$820.600

In Stock:2310 PCS

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Quick Quote

Please submit RFQ for IPL60R104C7 or email to us: Email: [email protected], we will contact you within 12 hours.

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Remark

IPL60R104C7 General Description

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Specifications

Parameter	Value	Parameter	Value
Source Content uid	IPL60R104C7	Rohs Code	Yes
Part Life Cycle Code	Active	Ihs Manufacturer	INFINEON TECHNOLOGIES AG
Package Description	VSON-4	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	97 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	20 A
Drain-source On Resistance-Max	0.104 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	S-PSSO-N4	JESD-609 Code	e3
Moisture Sensitivity Level	2A	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Min	-40 °C	Package Body Material	PLASTIC/EPOXY
Package Shape	SQUARE	Package Style	SMALL OUTLINE
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	83 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	NO LEAD	Terminal Position	SINGLE
Transistor Application	SWITCHING

Shipping

	Ship Fee	Lead Time
DHL	$20.00-$40.00 (0.50 KG)	2-5 days
Fedex	$20.00-$40.00 (0.50 KG)	2-5 days
UPS	$20.00-$40.00 (0.50 KG)	2-5 days
TNT	$20.00-$40.00 (0.50 KG)	2-5 days
EMS	$20.00-$40.00 (0.50 KG)	2-5 days
REGISTERED AIR MAIL	$20.00-$40.00 (0.50 KG)	2-5 days

Processing Time：Shipping fee depend on different zone and country.

Payment

Terms of payment		Hand Fee
	Wire Transfer	charge US$30.00 banking fee.
	Paypal	charge 4.0% service fee.
	Credit Card	charge 3.5% service fee.
	Western Union	charge US.00 banking fee.
	Money Gram	charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

Step1 :Product
Step2 :Vacuum packaging
Step3 :Anti-static bag
Step4 :Individual packaging
Step5 :Packaging boxes
Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

Part points

The IPL60R104C7 is a high-voltage power MOSFET chip designed for use in various industrial and consumer applications. It features a low on-state resistance, high current capability, and low gate charge for efficient power management. This chip is commonly used in power supplies, motor control, and lighting systems.
Equivalent

Some equivalent products of the IPL60R104C7 chip are P60N02L, IRFP460, and IPP60R900CFD. These chips all have similar specifications and can be used as replacements for the IPL60R104C7 in various applications.
Features

1. Power MOSFET in a TO-Leadless package 2. Low on-state resistance (RDS(on) = 51 mΩ) 3. Low gate charge (Qg = 35 nC) 4. High frequency switch mode power supplies 5. Ideal for synchronous rectification in DC-DC converters 6. RoHS compliant and halogen-free 7. Suitable for automotive applications
Pinout

The IPL60R104C7 is a 7-pin power MOSFET transistor with a pin-out configuration as follows: Gate (1), Drain (2), Source (3), Drain (4), Source (5), Heat sink (6), Gate (7). Its function is to control the flow of current in electronic circuits as a switching device or amplifier.
Manufacturer

Infineon Technologies AG is the manufacturer of the IPL60R104C7. It is a German semiconductor manufacturer specializing in the production of power semiconductors, sensors, and security solutions. The company serves various industries such as automotive, industrial, and consumer electronics.
Application Field

The IPL60R104C7 is a power MOSFET that is commonly used in applications requiring high efficiency, such as switched-mode power supplies, motor drives, and lighting systems. It is well-suited for applications where high power density and reliability are crucial, making it a popular choice in various industrial and automotive applications.
Package

The IPL60R104C7 chip is a power MOSFET in a TO-262 package type. It has a TO-220FP form factor and a size of 10.2mm x 15.3mm.

IPD031N03LG

Infineon