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Infineon IPD180N10N3G

N-Channel 100 V 43A (Tc) 71W (Tc) Surface Mount PG-TO252-3

ISO14001 ISO9001 DUNS

Brands: Infineon Technologies Corporation

Mfr.Part #: IPD180N10N3G

Datasheet: IPD180N10N3G Datasheet (PDF)

Package/Case: TO-252

Product Type: Transistors

RoHS Status:

Stock Condition: 2086 pcs, New Original

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IPD180N10N3G General Description

N-Channel 100 V 43A (Tc) 71W (Tc) Surface Mount PG-TO252-3

ipd180n10n3g

Features

  • Drain-source voltage (Vdss): 100V
  • Continuous drain current (Id): 180A
  • Maximum on-state resistance (Rds(on)): 3.3mΩ
  • Gate charge (Qg): 270nC
  • Fast switching and low switching losses
  • High current handling capability
  • RoHS compliant

Specifications

Parameter Value Parameter Value
IDpuls max 172.0 A Ptot max 71.0 W
VDS max 100.0 V Package DPAK (TO-252)
Polarity N RDS (on) max 18.0 mΩ
ID max 43.0 A VGS(th) max 3.5 V
VGS(th) min 2.0 V Operating Temperature max 175.0 °C
Operating Temperature min -55.0 °C

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The IPD180N10N3G is a power MOSFET chip designed for applications in power management and motor control systems. It features a low on-resistance and a high current capacity, making it suitable for high-performance devices. The chip incorporates advanced technology to enhance efficiency and reduce power losses, making it an ideal choice for various industrial applications.
  • Equivalent

    The equivalent products of the IPD180N10N3G chip are IPD180N10N3GXTSA1 and IPD180N10N3GXTMA1.
  • Features

    The IPD180N10N3G is a power MOSFET transistor with a voltage rating of 100 volts and a current rating of 180 amperes. It is designed for high efficiency and reliability in a wide range of applications.
  • Pinout

    The IPD180N10N3G is a MOSFET power transistor. It has a pin count of 3 and the pins are used for the following functions: 1. Gate pin (G): Controls the flow of current through the transistor. 2. Drain pin (D): Connects to the positive voltage supply. 3. Source pin (S): Connects to the ground or negative voltage supply.
  • Manufacturer

    The manufacturer of the IPD180N10N3G is Infineon Technologies. It is a German semiconductor company that designs and produces a wide range of semiconductor devices, including power semiconductors, microcontrollers, and sensors.
  • Application Field

    The IPD180N10N3G is a power MOSFET transistor commonly used in various applications, such as motor control, switch mode power supplies, and high-frequency DC-DC converters. It offers low on-resistance and high efficiency, making it suitable for a wide range of power electronics applications.
  • Package

    The package type of the IPD180N10N3G chip is Power-Flat 8x8. The form of the chip is surface mount, and it has dimensions of 5.28mm x 5.28mm x 0.95mm.

Datasheet PDF

Preliminary Specification IPD180N10N3G PDF Download

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  • quantity

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