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Infineon IPD090N03LG

Name: IPD090N03LG
Rating: 4.5 (10 reviews)

40 Amps, 30 Volts, 0.0135 ohms - N-Channel Power MOSFET (TO-252)

Brands: Infineon

Mfr.Part #: IPD090N03LG

Datasheet: IPD090N03LG Datasheet (PDF)

Package/Case: DPAK (TO-252)

Product Type: Transistors

RoHS Status:

Stock Condition: 3643 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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IPD090N03LG General Description

The IPD090N03LG is a power MOSFET transistor manufactured by Infineon Technologies. It is a N-channel enhancement mode transistor with a maximum drain-source voltage rating of 30V and a continuous drain current rating of 120A. The on-state resistance (RDS(on)) of the transistor is typically 0.009 ohms, which makes it suitable for high-power applications.The IPD090N03LG is designed for use in applications that require high power handling capability and low on-resistance in a compact package. It features a TO-252 package, which provides good thermal performance and efficient power dissipation. The transistor is designed to operate in a wide temperature range, making it suitable for use in a variety of environments.Furthermore, the IPD090N03LG has a gate threshold voltage (VGS(th)) range of 1.8V to 2.5V, which allows for easy and efficient gate control. It also has a low input capacitance and gate charge, making it well-suited for high-frequency switching applications.

Features

Fast switching performance
Low on-resistance
Low gate charge
Enhanced power efficiency
High reliability
Excellent thermal performance
Industry-standard package
RoHS compliant

Application

Automotive systems
Industrial automation
DC-DC converters
Solar inverters
Uninterruptible power supplies (UPS)
Motion control systems
Switched-mode power supplies (SMPS)
Motor drive applications
Power management systems
Renewable energy systems

Specifications

Parameter	Value	Parameter	Value
IDpuls max	280.0 A	VGS(th) max	2.2 V
VGS(th) min	1.0 V	Ptot max	42.0 W
VDS max	30.0 V	Package	DPAK (TO-252)
Polarity	N	RDS (on) max	13.5 mΩ
ID max	40.0 A	Operating Temperature max	175.0 °C
Operating Temperature min	-55.0 °C

Shipping

	Ship Fee	Lead Time
DHL	$20.00-$40.00 (0.50 KG)	2-5 days
Fedex	$20.00-$40.00 (0.50 KG)	2-5 days
UPS	$20.00-$40.00 (0.50 KG)	2-5 days
TNT	$20.00-$40.00 (0.50 KG)	2-5 days
EMS	$20.00-$40.00 (0.50 KG)	2-5 days
REGISTERED AIR MAIL	$20.00-$40.00 (0.50 KG)	2-5 days

Processing Time：Shipping fee depend on different zone and country.

Payment

Terms of payment		Hand Fee
	Wire Transfer	charge US$30.00 banking fee.
	Paypal	charge 4.0% service fee.
	Credit Card	charge 3.5% service fee.
	Western Union	charge US.00 banking fee.
	Money Gram	charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

Step1 :Product
Step2 :Vacuum packaging
Step3 :Anti-static bag
Step4 :Individual packaging
Step5 :Packaging boxes
Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

Part points

The IPD090N03LG is a power MOSFET chip designed for use in high-performance applications, particularly in power management circuits. This chip offers low on-resistance, high current capability, and efficient power handling. Its compact design makes it suitable for a wide range of electronic devices, including smartphones, laptops, and power supplies.
Equivalent

The equivalent products of IPD090N03LG chip are the following: - IPD60R800CE - IPD60R1K5CE - IPD50R1K4C - IPD90P04P4L-11 These chips are also Power MOSFETs, and they share similar electrical and mechanical characteristics with the IPD090N03LG chip.
Features

The IPD090N03LG is a power MOSFET transistor that operates in the N-channel. It features a low on-resistance of 9 mΩ, a high current rating of 90 A, and a low gate charge for efficient switching. It is suitable for high power applications like motor control, power supplies, and battery management systems.
Pinout

The IPD090N03LG is a 30V, 90A, N-channel MOSFET with a TO-252 pin configuration. It has three pins: gate, drain, and source. The gate pin controls the flow of current between the drain and source pins. This MOSFET is commonly used in power management applications where high current switching is required.
Manufacturer

The IPD090N03LG is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon Technologies is a leading global provider of semiconductors and system solutions for automotive, industrial, and power sectors, serving customers in more than 40 countries worldwide.
Application Field

The IPD090N03LG is commonly used in applications such as switch mode power supplies, motor control, and battery management systems. It is ideal for use in electronic devices and equipment that require efficient power management and high voltage switching capabilities.
Package

The IPD090N03LG chip is a MOSFET packaged in a surface-mount D²PAK (TO-263) form. It has dimensions of 10.8mm x 13.6mm x 4.8mm with a 6 leads pin configuration.

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