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Infineon IPP041N12N3G 48HRS

IPP041N12N3 G is a N-channel MOSFET with 120V voltage rating, 120A current rating, and TO220-3 package from the OptiMOS 3 series

ISO14001 ISO9001 DUNS

Brands: Infineon

Mfr.Part #: IPP041N12N3G

Datasheet: IPP041N12N3G Datasheet (PDF)

Package/Case: TO-220

RoHS Status:

Stock Condition: 2388 pcs, New Original

Product Type: Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $7.969 $7.969

In Stock:2388 PCS

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IPP041N12N3G General Description

The IPP041N12N3 G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power conversion applications. Manufactured by Infineon Technologies, it belongs to the CoolMOS™ N-channel series, renowned for its robust performance and reliability in various power supply designs.Here are the key details:1. **Part Number**: IPP041N12N3 G2. **Manufacturer**: Infineon Technologies3. **Type**: N-channel power MOSFET4. **Application**: Suitable for high-efficiency power conversion applications such as power supplies, motor control, and lighting.5. **Features**: Offers low switching and conduction losses, enabling high-efficiency power conversion. It is optimized for fast switching, reducing power dissipation and improving overall system efficiency.6. **Voltage and Current Ratings**: With a voltage rating of 1200V and a continuous drain current rating of 41A, it is capable of handling high-power applications.7. **Package Type**: Typically available in TO-220 FullPAK package, providing good thermal performance and ease of mounting on a heatsink.8. **Datasheet**: Detailed specifications, electrical characteristics, and application information can be found in the datasheet provided by Infineon Technologies.

ipp041n12n3g

Features

  • The IPP041N12N3 G is a power MOSFET transistor with a voltage rating of 1200V and a continuous drain current of 79A
  • It features low on-state resistance (0
  • 041 ohms) and fast switching characteristics, suitable for high-power applications like motor control, power supplies, and inverters
  • Additionally, it offers robust thermal performance and reliability
  • Application

  • The IPP041N12N3 G is a power MOSFET commonly used in various applications requiring high power efficiency and switching capabilities
  • It finds application in motor control, power supplies, inverters, and DC-DC converters
  • Its low on-resistance and high current-handling capabilities make it suitable for use in high-power electronics where energy efficiency and reliability are crucial
  • Specifications

    Parameter Value Parameter Value
    IDpuls max 480.0 A Ptot max 300.0 W
    VDS max 120.0 V Package TO-220
    Polarity N RDS (on) max 4.1 mΩ
    ID max 120.0 A VGS(th) max 4.0 V
    VGS(th) min 2.0 V Operating Temperature max 175.0 °C
    Operating Temperature min -55.0 °C

    Shipping

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    1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

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    We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

    After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

    • ESD
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    Equivalent Parts

    For the IPP041N12N3G component, you may consider these replacement and alternative parts:

    Part Number

    Brands

    Package

    Description

    Part Number :   FCPF041N12N3

    Brands :  

    Package :  

    Description :   from Fairchild Semiconductor

    Part Number :   BSC092N12NS3

    Brands :  

    Package :  

    Description :   G from Infineon Technologies

    Part Number :   CSD18540Q5B

    Brands :   Texas Instruments

    Package :  

    Description :  

    Part Number :   IRFP4468PBF

    Brands :  

    Package :   TO-247

    Description :   MOSFET MOSFT 100V 290A 2.6mOhm 360nC Qg

    Part points

    • IPP041N12N3G is a power MOSFET chip manufactured by Infineon. It is designed for high-power applications in areas such as automotive, industrial, and consumer electronics. The chip offers low on-resistance, high current handling capability, and a rugged design. It is suitable for various applications that require efficient power management and switching functions.
    • Equivalent

      There are no direct equivalent products to the IPP041N12N3G chip as it is a specific model and cannot be replaced with another chip. However, there are alternative power MOSFETs available in the market that can be used for similar applications.
    • Features

      IPP041N12N3G is a power MOSFET transistor with a voltage rating of 1200V and a current rating of 41A. It has a low on-resistance of 0.026 ohms, allowing for efficient power conversion. The transistor offers improved thermal resistance for higher power dissipation, enabling reliable operation. It is suitable for various applications like motor control, power supplies, and inverters.
    • Pinout

      The IPP041N12N3G is a power MOSFET transistor with a TO-220 package. It has three pins: gate, drain, and source. The gate pin controls the flow of current between the drain and source pins.
    • Manufacturer

      Infineon Technologies is the manufacturer of the IPP041N12N3G. Infineon is a German semiconductor company that specializes in the development and production of various electronic components, including power management devices, microcontrollers, and sensors.
    • Application Field

      The IPP041N12N3G is a power transiEencer typically used in applications such as industrial drives, telecom power supplies, renewable energy systems, and various other high-power applications that require efficient switching and low conduction losses.
    • Package

      The IPP041N12N3G chip is packaged in a TO-220 form and has a size of approximately 10.4mm x 15.7mm x 4.6mm.

    Datasheet PDF

    Preliminary Specification IPP041N12N3G PDF Download

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