Infineon IPD70R900P7S

Part points

• The IPD70R900P7S chip is a power MOSFET transistor designed for automotive applications. It operates at high efficiency and can handle high currents, making it suitable for use in various electronic systems within vehicles. This chip offers low on-resistance and is capable of dissipating heat efficiently. It is a reliable and efficient component for automotive power management.

• Equivalent

  There are no direct equivalent products of the IPD70R900P7S chip. However, similar power MOSFETs from other manufacturers include Infineon's IPP60R900P7 and Vishay's SIHP9N60E. These alternatives provide comparable specifications and can be used as substitutes in certain applications.

• Features

  The IPD70R900P7S is a power MOSFET transistor designed for high-current applications. Key features include a low on-resistance (RDS(on)) of 0.54 mΩ, which helps minimize power losses, and a high drain current rating of 100 A, allowing for efficient and reliable operation in demanding conditions.

• Pinout

  The IPD70R900P7S is a power MOSFET transistor with a TO-252-3 package. It has 3 pins: gate, drain, and source. The gate pin controls the conductivity between drain and source.

• Manufacturer

  The manufacturer of the IPD70R900P7S is Infineon Technologies AG. It is a German multinational company that specializes in manufacturing semiconductors and system solutions. Infineon is known for its expertise in power electronics, automotive electronics, and security solutions, serving various industries including automotive, industrial, and consumer electronics.

• Application Field

  The IPD70R900P7S is a power MOSFET transistor with a low on-resistance, suitable for various switching applications in power supplies, motor control, and other industrial applications.

• Package

  The IPD70R900P7S chip has a package type of D2PAK, a form type of TO-263, and its size is 10mm x 12mm.