Orders Over
$5000IXFN200N10P
Trans MOSFET N-CH 100V 200A 4-Pin SOT-227B
Brands: IXYS
Mfr.Part #: IXFN200N10P
Datasheet: IXFN200N10P Datasheet (PDF)
Package/Case: SOT-227-4,miniBLOC
RoHS Status:
Stock Condition: 9,035 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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IXFN200N10P General Description
Polar™ HiPerFETs (IXF) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability.
Features
- International Standard Packages
- Dynamic dv/dt Rating
- Avalanche Rated
- Fast Intrinsic Rectifier
- Low Q
- G
- and R
- DS(on)
- Low Drain-to-Tab Capacitance
- Low Package Inductance
- Advantages:
- Easy to Mount
- Space Savings
Application
- Switch-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- Battery Chargers
- Uninterrupted Power Supplies
- AC Motor Drives
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
Series | HiPerFET™, Polar | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 200A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 500mA, 10V | Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 25 V | Power Dissipation (Max) | 680W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B | Package / Case | SOT-227-4, miniBLOC |
Base Product Number | IXFN200 |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IXFN200N10P is a power MOSFET chip designed for high voltage and high-speed switching applications. It features a drain-to-source voltage of 1000V and a continuous drain current of 200A, making it suitable for industrial and automotive power systems. The chip is built with advanced silicon technology to deliver efficient performance and reliability in demanding environments.
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Equivalent
The equivalent products of IXFN200N10P chip are IXFX280N10P, IXFQ300N10P, and IXYS IXTK200N10P. These products offer similar features and performance levels to the IXFN200N10P chip. -
Features
IXFN200N10P is a 100V, 200A MOSFET module with a low on-state resistance of 4.6mOhm. It has an integrated gate drive circuitry, internal temperature monitoring, and fault reporting. The module is designed for motor control, power supply, and inverter applications. -
Pinout
IXFN200N10P is a power MOSFET with a pin count of three. The functions of the pins are gate, drain, and source. The maximum drain-source voltage is 100 volts, with a continuous drain current of 200 amps. It is designed for high-power switching applications. -
Manufacturer
IXYS Corporation is the manufacturer of IXFN200N10P. IXYS Corporation is a global provider of semiconductor solutions, specializing in power, radio frequency, and signal processing technologies. They provide products that improve efficiency, performance, and reliability in a variety of applications including industrial, automotive, telecommunications, and medical industries. -
Application Field
IXFN200N10P is a power MOSFET transistor with a high voltage rating and low on-resistance, making it suitable for various applications such as power supplies, motor control, inverters, and electronic loads. It can be used in industrial, automotive, and consumer electronics applications where high efficiency and reliable switching are required. -
Package
The IXFN200N10P chip comes in a TO-268 package type. It is a power MOSFET designed in a through hole form. The size of the chip is approximately 10.5mm x 9.9mm x 4.6mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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365 days quality guarantee for all products