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Infineon BSZ16DN25NS3G
N-Channel 250 V 10.9A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8
Brands: Infineon Technologies Corporation
Mfr.Part #: BSZ16DN25NS3G
Datasheet: BSZ16DN25NS3G Datasheet (PDF)
Package/Case: TSDSON-8
Product Type: Transistors
RoHS Status:
Stock Condition: 3849 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomBSZ16DN25NS3G General Description
N-Channel 250 V 10.9A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | BSZ16DN25NS3G | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Package Description | SMALL OUTLINE, S-PDSO-N5 |
| Pin Count | 8 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | Infineon |
| Avalanche Energy Rating (Eas) | 120 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 250 V |
| Drain Current-Max (ID) | 10.9 A | Drain-source On Resistance-Max | 0.165 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | S-PDSO-N8 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE | Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 62.5 W |
| Pulsed Drain Current-Max (IDM) | 44 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | TIN |
| Terminal Form | NO LEAD | Terminal Position | DUAL |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Series | OptiMOS™ | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V | Current - Continuous Drain (Id) @ 25°C | 10.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 165mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 32µA | Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 100 V |
| Power Dissipation (Max) | 62.5W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PG-TSDSON-8 |
| Package / Case | 8-PowerTDFN |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
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Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
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Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The BSZ16DN25NS3G chip is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for efficient switching applications in power supply circuits. It has a low on-resistance and fast switching speed, making it suitable for high-frequency operations. The chip can handle a maximum drain current of 25A and a maximum drain-source voltage of 250V, making it ideal for various industrial and automotive applications.
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Features
The features of BSZ16DN25NS3G include a continuous drain current of 20 A, low on-resistance of 48 mΩ, gate threshold voltage range of 2.3-3.5 V, and high power dissipation capability. It is a N-channel MOSFET designed for efficient power management applications. -
Pinout
The BSZ16DN25NS3G is a Power MOSFET transistor with an N-Channel. It has a pin count of 3, consisting of a Drain (D), Source (S), and Gate (G). Its main function is to control the flow of electrical current and amplify signals in various electronic devices and circuits. -
Manufacturer
The manufacturer of the BSZ16DN25NS3G is Infineon Technologies AG. It is a German multinational company that specializes in the production of semiconductors and system solutions for automotive, industrial, and power electronics applications. -
Application Field
The BSZ16DN25NS3G is a semiconductor device designed for use in power electronics applications. Some potential application areas for this device include motor control, power supplies, inverters, and uninterruptible power supplies (UPS). It can also be used in various industrial and automotive applications that require high voltage and high-speed switching capabilities. -
Package
The package type of the BSZ16DN25NS3G chip is D²PAK (TO-263), its form is molded plastic, and its size is approximately 10.16 mm x 9.98 mm x 4.65 mm.
We provide high quality products, thoughtful service and after sale guarantee
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We have rich products, can meet your various needs.
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Minimum order quantity starts from 1pcs.
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Lowest international shipping fee starts from $0.00
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365 days quality guarantee for all products
