Images are for reference only See Product Specifications
Infineon BSC123N08NS3G
N-Channel 80 V 11A (Ta), 55A (Tc) 2.5W (Ta), 66W (Tc) Surface Mount PG-TDSON-8-1
Brands: Infineon Technologies Corporation
Mfr.Part #: BSC123N08NS3G
Datasheet: BSC123N08NS3G Datasheet (PDF)
Package/Case: SUPERSO8
RoHS Status:
Stock Condition: 3313 pcs, New Original
Product Type: Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.457 | $1.457 |
| 10 | $1.137 | $11.370 |
| 30 | $0.938 | $28.140 |
| 100 | $0.732 | $73.200 |
| 500 | $0.478 | $239.000 |
| 1000 | $0.437 | $437.000 |
In Stock:3313 PCS
BSC123N08NS3G General Description
N-Channel 80 V 11A (Ta), 55A (Tc) 2.5W (Ta), 66W (Tc) Surface Mount PG-TDSON-8-1
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | BSC123N08NS3G | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Package Description | TDSON-8 |
| Pin Count | 8 | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | Infineon |
| Avalanche Energy Rating (Eas) | 70 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 80 V |
| Drain Current-Max (ID) | 55 A | Drain-source On Resistance-Max | 0.0123 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-N8 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 66 W | Pulsed Drain Current-Max (IDM) | 220 A |
| Qualification Status | Not Qualified | Surface Mount | YES |
| Terminal Finish | TIN | Terminal Form | NO LEAD |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Series | OptiMOS™ | Product Status | Active |
| FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V | Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 55A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 12.3mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 33µA | Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 40 V |
| Power Dissipation (Max) | 2.5W (Ta), 66W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PG-TDSON-8-1 |
| Package / Case | 8-PowerTDFN |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
-
![Product]( "Product")
Step1 :Product
-
![Vacuum packaging]( "Vacuum packaging")
Step2 :Vacuum packaging
-
![Anti-static bag]( "Anti-static bag")
Step3 :Anti-static bag
-
![Individual packaging]( "Individual packaging")
Step4 :Individual packaging
-
![Packaging boxes]( "Packaging boxes")
Step5 :Packaging boxes
-
![bar-code shipping tag]( "bar-code shipping tag")
Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
-
The BSC123N08NS3G is a power MOSFET chip designed for efficient switching applications. It has a low on-resistance and high current-carrying capacity, making it suitable for various power electronics applications. The chip's features include a ruggedized design, low gate charge, and fast switching speed, enabling improved system performance and energy efficiency. Overall, the BSC123N08NS3G chip offers reliable and high-performance power management solutions.
-
Equivalent
There are no direct equivalent products to the BSC123N08NS3G chip. However, you may consider looking for similar power MOSFETs from other manufacturers like Infineon, ON Semiconductor, or STMicroelectronics to meet your requirements. -
Features
The features of BSC123N08NS3G include a 1200V breakdown voltage, a low on-resistance of 123mΩ, a maximum drain current of 60A, and a gate charge of 110nC. -
Pinout
The BSC123N08NS3G is a power MOSFET with a TO-263 package. It has 3 pins: a gate pin for controlling the MOSFET's conductivity, a drain pin for outputting the current, and a source pin for inputting the current. -
Manufacturer
The manufacturer of the BSC123N08NS3G is Infineon Technologies AG. It is a German semiconductor manufacturer that produces and sells a wide range of components and systems used in various industries, including automotive, power and industrial electronics, and mobile devices. -
Application Field
The BSC123N08NS3G is a power transistor that can be used in various application areas, such as power management in industrial automation, consumer electronics, and telecommunications. It can also be used in motor control, DC-DC converters, and load switch applications. -
Package
The BSC123N08NS3G chip has a package type of D2PAK, a form of TO-263, and a size of 10.4mm x 14.0mm x 4.7mm.
We provide high quality products, thoughtful service and after sale guarantee
-
![Product]( "Product")
We have rich products, can meet your various needs.
-
![quantity]( "quantity")
Minimum order quantity starts from 1pcs.
-
![shipping]( "shipping")
Lowest international shipping fee starts from $0.00
-
![guarantee]( "guarantee")
365 days quality guarantee for all products
