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Infineon BSC110N06NS3G
N-Channel 60 V 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5
Brands: Infineon Technologies Corporation
Mfr.Part #: BSC110N06NS3G
Datasheet: BSC110N06NS3G Datasheet (PDF)
Package/Case: SUPERSO8
RoHS Status:
Stock Condition: 2933 pcs, New Original
Product Type: Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.363 | $1.363 |
| 10 | $1.191 | $11.910 |
| 30 | $1.096 | $32.880 |
| 100 | $0.991 | $99.100 |
| 500 | $0.943 | $471.500 |
| 1000 | $0.921 | $921.000 |
In Stock:2933 PCS
BSC110N06NS3G General Description
N-Channel 60 V 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| Source Content uid | BSC110N06NS3G | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | Package Description | TDSON-8 |
| Pin Count | 8 | Reach Compliance Code | not_compliant |
| ECCN Code | EAR99 | Samacsys Manufacturer | Infineon |
| Avalanche Energy Rating (Eas) | 22 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 12 A | Drain-source On Resistance-Max | 0.011 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-N8 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 50 W |
| Pulsed Drain Current-Max (IDM) | 200 A | Qualification Status | Not Qualified |
| Surface Mount | YES | Terminal Finish | TIN |
| Terminal Form | NO LEAD | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
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Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
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Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
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Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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BSC110N06NS3G is a power MOSFET chip designed for high current applications. It offers low on-resistance and high switching efficiency, making it suitable for a wide range of voltage conversion and power management applications. With its compact size and advanced features, the BSC110N06NS3G chip provides excellent performance and reliability in various electronic devices.
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Equivalent
Some equivalent products to the BSC110N06NS3G chip include the BSC108B12NS3G, BSP130P, BSC180N06NS3G, and BSC078N10NS3G chips. -
Features
The BSC110N06NS3G is a power MOSFET with a voltage rating of 60V and a current rating of 110A. It has a low on-resistance of 6mΩ, allowing for efficient power conversion. The MOSFET also features low gate charge and low gate-source voltage, making it suitable for use in various applications such as motor control and power supplies. -
Pinout
The BSC110N06NS3G is a power MOSFET and has a pin count of three. The pins are Gate (G), Drain (D), and Source (S). The Gate pin controls the conduction between the Drain and Source pins, making it suitable for power switching applications. -
Manufacturer
Infineon Technologies AG is the manufacturer of the BSC110N06NS3G. It is a German semiconductor company that specializes in manufacturing and supplying components for power electronics, including industrial and automotive applications. -
Application Field
The BSC110N06NS3G is a power MOSFET transistor typically used in power management applications such as switch mode power supplies, motor control, and automotive systems. -
Package
The BSC110N06NS3G chip has a D²PAK package type, a single form, and a size of 10.4mm x 9.9mm x 4.6mm.
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