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Infineon IRFB4710PBF
IRFB4710PBF is a MOSFET with a rated voltage of 100V, a maximum current of 75A, and a low on-resistance of 14mOhm
Brands: Infineon
Mfr.Part #: IRFB4710PBF
Datasheet: IRFB4710PBF Datasheet (PDF)
Package/Case: TO220
RoHS Status:
Stock Condition: 3278 pcs, New Original
Product Type: Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $2.453 | $2.453 |
| 10 | $2.147 | $21.470 |
| 30 | $1.955 | $58.650 |
| 100 | $1.758 | $175.800 |
| 500 | $1.670 | $835.000 |
| 1000 | $1.631 | $1631.000 |
In Stock:3278 PCS
IRFB4710PBF General Description
The IRFB4710PBF is a power MOSFET transistor designed for high current and high voltage applications. It features a drain-to-source voltage rating of 100V and a continuous drain current of 81A. The transistor has a low on-resistance of 23mOhm, which allows for efficient power switching and low power dissipation.The IRFB4710PBF is housed in a TO-220AB package, which provides good thermal dissipation and allows for easy mounting on a heat sink. This package also makes it compatible with standard through-hole soldering techniques.This power MOSFET transistor is suitable for a wide range of applications, including power supplies, motor control, and instrumentation. Its high current and voltage ratings make it ideal for use in high-power circuits where reliable and efficient switching is required.In addition to its electrical performance, the IRFB4710PBF has a low gate charge and capacitance, which enables fast switching speeds and reduces switching losses. This makes the transistor well-suited for high-frequency switching applications.
Features
- Power MOSFET
- 170A continuous drain current
- 100V drain-source voltage
- 0.021 ohm Rds(on) maximum
- High performance
- Low gate charge
- Fast switching speed
- RoHS compliant
Application
- Switching applications
- Power supplies
- DC motor drives
- Induction heating
- Switching regulators
- Automotive systems
- Motion control systems
- Welding applications
- Amplifiers
- UPS systems
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| functionalPacking | TUBE | addProductInfo | Trench Mosfet - TO-220 |
| packageNameMarketing | TO220 | msl | NA |
| halogenFree | no | customerInfo | STANDARD |
| fgr | A82 | productClassification | COM |
| productStatusInfo | discontinued | hfgr | A |
| packageName | TO220 | pbFree | yes |
| moistureProtPack | NON DRY | orderingCode | SP001556118 |
| fourBlockPackageName | PG-TO220-3-904 | rohsCompliant | yes |
| opn | IRFB4710PBF | docuNoCancellation | PD_197_23 |
| completelyPbFree | yes |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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IRFB4710PBF is a power MOSFET transistor designed for high voltage applications. It has a voltage rating of 100V and a current rating of 68A, making it suitable for use in power management systems, motor control, and other high-power applications. Its compact size and low ON resistance make it ideal for use in compact and efficient designs.
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Equivalent
The equivalent products of the IRFB4710PBF chip are IRFB4710, IRF3710, and IRF4710. These are power MOSFETs designed for high efficiency, fast switching applications, and are suitable replacements for the IRFB4710PBF chip. -
Features
The features of IRFB4710PBF include a Vds (Drain-source Voltage) of 100V, Id (Continuous Drain Current) of 81A, Rds(on) (On-Resistance) of 3.6mΩ, high power handling capability, low gate charge, and fast switching speed. It is suitable for high power switching applications. -
Pinout
The IRFB4710PBF is a power MOSFET with a pin count of 3. Pin 1 is the gate, Pin 2 is the drain, and Pin 3 is the source. It is commonly used for high voltage and high power applications due to its low on-state resistance and high current handling capabilities. -
Manufacturer
The manufacturer of the IRFB4710PBF is International Rectifier, a California-based company that specializes in manufacturing power management technology for various industries including automotive, consumer electronics, and industrial applications. They are known for their high-performance power MOSFETs, IGBTs, and analog and mixed-signal integrated circuits. -
Application Field
The IRFB4710PBF is commonly used in applications such as motor control, solar inverters, and power supplies due to its high efficiency and low on-resistance. Additionally, it is often used in industrial and automotive applications for its robust performance and high current handling capabilities. -
Package
The IRFB4710PBF chip is a TO-220AB package type, with a through-hole mounting style. It measures 10.67mm in length, 4.83mm in width, and has a height of 9.44mm. The chip has a form factor of a single MOSFET transistor.
Datasheet PDF
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Infineon Technologies Corporation
100V Single N-Channel HEXFET Power MOSFET in a PQF...
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