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Infineon BSC046N10NS3G

Infineon BSC046N10NS3G N-channel MOSFET Transistor, 100 A, 100 V, 8-Pin TDSON

ISO14001 ISO9001 DUNS

Brands: Infineon Technologies Corporation

Mfr.Part #: BSC046N10NS3G

Datasheet: BSC046N10NS3G Datasheet (PDF)

Package/Case: QFN-8 5X6

Product Type: Single FETs, MOSFETs

RoHS Status:

Stock Condition: 3,843 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

Quick Quote

Please submit RFQ for BSC046N10NS3G or email to us: Email: [email protected], we will contact you within 12 hours.

BSC046N10NS3G General Description

Power Field-Effect Transistor, 17A I(D), 100V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8

bsc046n10ns3g
BSC046N10NS3G

Specifications

Parameter Value Parameter Value
Source Content uid BSC046N10NS3G Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, SUPERSO8, TDSON-8 Pin Count 8
Reach Compliance Code not_compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 350 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.0046 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 8 Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A Surface Mount YES
Terminal Finish TIN Terminal Form NO LEAD
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The BSC046N10NS3G is a power MOSFET chip from Infineon Technologies. It is designed for various applications and offers a low on-resistance and high power capability. The chip features a low switching and conduction losses, making it efficient in power management systems. With its compact size and high performance, the BSC046N10NS3G chip is suitable for a wide range of power electronics applications.
  • Equivalent

    BSC046N10NS3G chip does not have any direct equivalent products. The chip, produced by Infineon Technologies, is a N-channel power MOSFET designed for applications such as motor control and DC-DC conversion.
  • Features

    The BSC046N10NS3G is a power MOSFET with a maximum drain-source voltage of 100V and a continuous drain current of 46A. It has a low ON resistance, high power dissipation capability, and is suitable for various applications such as power tools, motor control, and power supplies.
  • Pinout

    The BSC046N10NS3G is a power MOSFET transistor. It has a pin count of 2 (Drain and Source) and is commonly used for power management applications.
  • Manufacturer

    The manufacturer of the BSC046N10NS3G is Infineon Technologies AG. Infineon is a global semiconductor company that specializes in manufacturing and designing a wide range of electronic components and systems. It offers products for various industries including automotive, industrial, and consumer electronics, among others.
  • Application Field

    The BSC046N10NS3G is a power MOSFET transistor that can be used in various application areas, including power supplies, motor control, automotive systems, and battery management. It offers low on-resistance and high current capability, making it suitable for applications that require efficient power switching and high-performance electronic systems.
  • Package

    The BSC046N10NS3G chip is available in a TO-220 package type, with a form of through-hole mounting. The package size is typically around 10.3mm in length, 9.5mm in width, and 4.6mm in height.

We provide high quality products, thoughtful service and after sale guarantee

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  • quantity

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  • shipping

    Lowest international shipping fee starts from $0.00

  • guarantee

    365 days quality guarantee for all products

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