Infineon IRF6619
20V MOSFET with 2.2mΩ resistance at 30A
Brands: Infineon
Mfr.Part #: IRF6619
Datasheet: IRF6619 Datasheet (PDF)
Package/Case: DirectFET-MX
Product Type: MOSFET
RoHS Status:
Stock Condition: 9458 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomIRF6619 General Description
The IRF6619 is a power MOSFET transistor designed for high efficiency and high speed switching applications. It has a maximum drain-source voltage of 150V and a continuous drain current of 8.5A, making it suitable for a wide range of power conversion and motor control applications.This MOSFET features a low on-resistance of 0.047 ohms, which allows for efficient power conversion and reduced power losses. It also has a fast switching speed, with a typical turn-on time of 8.5ns and a turn-off time of 15ns, enabling high-speed switching operations.The IRF6619 has a TO-220 package, which provides good thermal performance and allows for easy mounting on a heatsink. It is also RoHS compliant, making it suitable for use in environmentally friendly applications.
Features
- High frequency rugged N-channel MOSFET
- Low on-resistance
- Fast switching speed
- Low gate charge
- Surface mount package
- Excellent thermal stability
- Low power loss
- Lead-free and RoHS compliant
- Designed for use in automotive and industrial applications
Application
- Motor control
- Power supplies
- Lighting
- Battery management systems
- Switching regulators
- DC-DC converters
- Electric vehicles
- Solar inverters
- Industrial automation
- Robotics
Specifications
Parameter | Value | Parameter | Value |
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Product Category | MOSFET | RoHS | N |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | DirectFET-MX | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 30 A | Rds On - Drain-Source Resistance | 1.65 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.8 W |
Channel Mode | Enhancement | Brand | Infineon Technologies |
Configuration | Single | Fall Time | 9.3 ns |
Height | 0.7 mm | Length | 6.35 mm |
Moisture Sensitive | Yes | Product Type | MOSFET |
Rise Time | 71 ns | Factory Pack Quantity | 4800 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | DirectFET Power MOSFET | Typical Turn-Off Delay Time | 25 ns |
Typical Turn-On Delay Time | 21 ns | Width | 5.05 mm |
Part # Aliases | SP001526848 |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IRF6619 is a dual N-Channel MOSFET chip designed for use in high-frequency switching applications. It is commonly used in power supply circuits, motor control systems, and DC-DC converters due to its low on-state resistance and high efficiency. The chip features a small package size and is ideal for space-constrained designs.
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Equivalent
Some equivalent products of IRF6619 chip are: 1. IRF3205 2. IRF640 3. IRF630 4. IRF740 5. IRF540 -
Features
IRF6619 is a N-channel power MOSFET with a maximum drain-source voltage of 100V, drain current of 13A, and low on-resistance. It is designed for high-speed switching applications with low gate charge and reduced thermal resistance. This MOSFET also has a TO-220 package for easy mounting and heat dissipation. -
Pinout
The IRF6619 is a dual N-channel power MOSFET with a pin count of 8. Pin 1 and 2 are the gate connections for each MOSFET, pin 4 and 5 are source connections, and pin 3 and 6 are connected together and serve as the drain connection. Pin 7 is the substrate connection and pin 8 is the thermal pad. -
Manufacturer
The manufacturer of the IRF6619 is Infineon Technologies. Infineon Technologies is a multinational semiconductor manufacturer, specializing in the production of power semiconductors, microcontrollers, and sensor products. They provide solutions for automotive, industrial, communication, and consumer electronics markets. -
Application Field
The IRF6619 is commonly used in automotive applications, motor control circuits, power supplies, and LED lighting systems due to its high efficiency, low on-resistance, and fast switching capabilities. It is also suitable for battery chargers, DC-DC converters, and other power management applications where high power handling and reliable performance are required. -
Package
The IRF6619 chip is typically packaged in a standard TO-263 form. It comes in a single component package size with a weight of approximately 0.33 grams.
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