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Infineon IRF6619

20V MOSFET with 2.2mΩ resistance at 30A

ISO14001 ISO9001 DUNS

Brands: Infineon

Mfr.Part #: IRF6619

Datasheet: IRF6619 Datasheet (PDF)

Package/Case: DirectFET-MX

Product Type: MOSFET

RoHS Status:

Stock Condition: 9458 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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IRF6619 General Description

The IRF6619 is a power MOSFET transistor designed for high efficiency and high speed switching applications. It has a maximum drain-source voltage of 150V and a continuous drain current of 8.5A, making it suitable for a wide range of power conversion and motor control applications.This MOSFET features a low on-resistance of 0.047 ohms, which allows for efficient power conversion and reduced power losses. It also has a fast switching speed, with a typical turn-on time of 8.5ns and a turn-off time of 15ns, enabling high-speed switching operations.The IRF6619 has a TO-220 package, which provides good thermal performance and allows for easy mounting on a heatsink. It is also RoHS compliant, making it suitable for use in environmentally friendly applications.

Features

  • High frequency rugged N-channel MOSFET
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Surface mount package
  • Excellent thermal stability
  • Low power loss
  • Lead-free and RoHS compliant
  • Designed for use in automotive and industrial applications

Application

  • Motor control
  • Power supplies
  • Lighting
  • Battery management systems
  • Switching regulators
  • DC-DC converters
  • Electric vehicles
  • Solar inverters
  • Industrial automation
  • Robotics

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS N
Technology Si Mounting Style SMD/SMT
Package / Case DirectFET-MX Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 30 A Rds On - Drain-Source Resistance 1.65 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.8 W
Channel Mode Enhancement Brand Infineon Technologies
Configuration Single Fall Time 9.3 ns
Height 0.7 mm Length 6.35 mm
Moisture Sensitive Yes Product Type MOSFET
Rise Time 71 ns Factory Pack Quantity 4800
Subcategory MOSFETs Transistor Type 1 N-Channel
Type DirectFET Power MOSFET Typical Turn-Off Delay Time 25 ns
Typical Turn-On Delay Time 21 ns Width 5.05 mm
Part # Aliases SP001526848

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The IRF6619 is a dual N-Channel MOSFET chip designed for use in high-frequency switching applications. It is commonly used in power supply circuits, motor control systems, and DC-DC converters due to its low on-state resistance and high efficiency. The chip features a small package size and is ideal for space-constrained designs.
  • Equivalent

    Some equivalent products of IRF6619 chip are: 1. IRF3205 2. IRF640 3. IRF630 4. IRF740 5. IRF540
  • Features

    IRF6619 is a N-channel power MOSFET with a maximum drain-source voltage of 100V, drain current of 13A, and low on-resistance. It is designed for high-speed switching applications with low gate charge and reduced thermal resistance. This MOSFET also has a TO-220 package for easy mounting and heat dissipation.
  • Pinout

    The IRF6619 is a dual N-channel power MOSFET with a pin count of 8. Pin 1 and 2 are the gate connections for each MOSFET, pin 4 and 5 are source connections, and pin 3 and 6 are connected together and serve as the drain connection. Pin 7 is the substrate connection and pin 8 is the thermal pad.
  • Manufacturer

    The manufacturer of the IRF6619 is Infineon Technologies. Infineon Technologies is a multinational semiconductor manufacturer, specializing in the production of power semiconductors, microcontrollers, and sensor products. They provide solutions for automotive, industrial, communication, and consumer electronics markets.
  • Application Field

    The IRF6619 is commonly used in automotive applications, motor control circuits, power supplies, and LED lighting systems due to its high efficiency, low on-resistance, and fast switching capabilities. It is also suitable for battery chargers, DC-DC converters, and other power management applications where high power handling and reliable performance are required.
  • Package

    The IRF6619 chip is typically packaged in a standard TO-263 form. It comes in a single component package size with a weight of approximately 0.33 grams.

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