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Infineon IPD30N10S3L-34
Automotive-grade N-channel transistor MOSFET with a 100V rating and 30A current handling capability
Brands: Infineon
Mfr.Part #: IPD30N10S3L-34
Datasheet: IPD30N10S3L-34 Datasheet (PDF)
Package/Case: DPAK (PG-TO252-3)
RoHS Status:
Stock Condition: 10000 pcs, New Original
Product Type: MOSFET
Warranty: 1 Year Ovaga Warranty - Find Out More
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*All prices are in USD
| Qty | Unit Price | Ext Price |
|---|---|---|
| 1 | $1.655 | $1.655 |
| 10 | $1.196 | $11.960 |
| 30 | $0.925 | $27.750 |
| 100 | $0.650 | $65.000 |
| 500 | $0.522 | $261.000 |
| 1000 | $0.465 | $465.000 |
In Stock:10000 PCS
IPD30N10S3L-34 General Description
The IPD30N10S3L-34 is a N-channel enhancement mode power MOSFET transistor with a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 30A. It has a low on-resistance of 34mΩ at a VGS of 10V and offers high efficiency and reliability in various power switching applications.This MOSFET is designed for use in power supplies, motor control, LED lighting, battery management, and automotive applications. With its low on-resistance, high current rating, and robust design, it provides excellent performance in high-power systems where efficiency and thermal management are critical.The IPD30N10S3L-34 features a TO-252 package, also known as DPAK, which provides a compact and cost-effective solution for mounting and heat dissipation. Its small form factor makes it suitable for space-constrained applications while still maintaining high power handling capabilities.
Features
- 30 A continuous drain current
- 100 V drain-source breakdown voltage
- 3.3 mΩ on-resistance
- Low gate charge
- Enhanced power dissipation capabilities
- Halogen-free and RoHS compliant
Application
- Power supplies
- Motor control
- DC-DC converters
- High frequency circuits
- Automotive systems
- LED lighting
- Solar inverters
- Industrial equipment
- Telecommunications
- UPS systems
Specifications
| Parameter | Value | Parameter | Value |
|---|---|---|---|
| IDpuls max | 120.0 A | RthJC max | 2.6 K/W |
| Ptot max | 57.0 W | Qualification | Automotive |
| Package | DPAK (PG-TO252-3) | VDS max | 100.0 V |
| VGS(th) min | 1.2 V | RDS (on) max | 31.0 mΩ |
| VGS(th) max | 2.4 V | QG max | 24.0 nC |
| Polarity | N | ID max | 30.0 A |
| Technology | OptiMOS™-T | Operating Temperature max | 175.0 °C |
| Operating Temperature min | -55.0 °C |
Shipping
| Shipping Type | Ship Fee | Lead Time | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days |
 |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time：Shipping fee depend on different zone and country.
Payment
| Terms of payment | Hand Fee | |
|---|---|---|
 |
Wire Transfer | charge US$30.00 banking fee. |
 |
Paypal | charge 4.0% service fee. |
 |
Credit Card | charge 3.5% service fee. |
 |
Western Union | charge US.00 banking fee. |
 |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Part points
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The IPD30N10S3L-34 chip is a power MOSFET transistor designed for use in a wide range of applications. It offers a low on-resistance and high current capability, making it ideal for power conversion, motor control, and other high-power applications. With its advanced features and robust design, this chip provides excellent performance and reliability in demanding environments.
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Equivalent
Some equivalent products of the IPD30N10S3L-34 chip include the IRFP90N10D, STP30N10L, IRF3805S, and IRL90N0C3. -
Features
The IPD30N10S3L-34 is a power MOSFET transistor. It is designed for high-speed switching applications. Its features include a drain-source voltage of 100V, a continuous drain current of 30A, low on-resistance, and a compact surface mount package. -
Pinout
The IPD30N10S3L-34 is a MOSFET transistor with a TO-252 package. It has 3 pins: gate, drain, and source. The gate controls the flow of electric current between the drain and source. -
Manufacturer
The manufacturer of the IPD30N10S3L-34 is Infineon Technologies AG. It is a German semiconductor manufacturing company specializing in the production of power semiconductors, microcontrollers, and sensors. Infineon Technologies caters to various industries such as automotive, industrial, communication, and consumer electronics globally. -
Application Field
The IPD30N10S3L-34 is a power MOSFET designed for high current applications such as motor control, power supplies, and inverters. It is suitable for use in industrial and automotive systems where high efficiency and reliability are required. -
Package
The IPD30N10S3L-34 chip is packaged in a D2PAK (TO-263) form. It has a size of 10.3mm x 9.4mm x 4.6mm.
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