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NXP BLF888A

Name: BLF888A
Rating: 4.5 (10 reviews)

BLF888A is an N-channel RF MOSFET optimized for radio frequency tasks, accommodating voltages up to 110V and encapsulated in a 5-pin SOT-539A package

Brands: Ampleon

Mfr.Part #: BLF888A

Datasheet: BLF888A Datasheet (PDF)

Package/Case: SOT-539A

Product Type: RF FETs, MOSFETs

RoHS Status:

Stock Condition: 3,346 pcs, New Original

Warranty: 1 Year Ovaga Warranty - Find Out More

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BLF888A General Description

The BLF888A is a high-power RF transistor designed for use in the broadcast industry, specifically for FM radio and TV applications. It is a silicon N-channel enhancement mode lateral DMOS transistor capable of operating at frequencies up to 500 MHz. The BLF888A is capable of delivering output power levels of up to 1.2 kW with a gain of 12 dB, making it suitable for high-power broadcast amplification.This transistor is housed in a bolt-down package for easy installation and heat dissipation. It features a thermistor for temperature sensing and protection, as well as internal input matching for optimal performance. The BLF888A is designed for reliable operation in harsh environments, with enhanced ruggedness and thermal stability.With a drain efficiency of up to 75% at rated output power, the BLF888A offers high performance while minimizing power consumption. It has a low thermal resistance to ensure efficient heat dissipation and reliability under high power operation. The BLF888A is RoHS compliant and is suitable for use in a variety of broadcast applications where high-power amplification is required

Features

High power and high gain
Excellent linearity and low intermodulation distortion
Designed for broadband commercial and military applications
Capable of handling high VSWR mismatch
Integrated ESD protection
Available in bolt down or solder down flange package

Application

Industrial RF power amplification
Mobile radio transmitters
RF heating applications
Avionics
Marine radar systems
Amateur radio
Medical equipment
Television and FM broadcast transmitters
Microwave ovens
Scientific research

Specifications

Parameter	Value	Parameter	Value
ECCN (US)	EAR99	Part Status	Active
Configuration	Dual Common Source	Channel Mode	Enhancement
Channel Type	N	Number of Elements per Chip	1
Mode of Operation	Pulsed RF Class-AB\|DVB-T\|2-Tone Class-AB	Process Technology	LDMOS
Maximum Drain Source Voltage (V)	110	Maximum Gate Source Voltage (V)	11
Maximum VSWR	10	Maximum Drain Source Resistance (mOhm)	143(Typ)@6.15V
Typical Input Capacitance @ Vds (pF)	220@50V	Typical Reverse Transfer Capacitance @ Vds (pF)	1.2@50V
Typical Output Capacitance @ Vds (pF)	74@50V	Output Power (W)	250(Min)
Typical Power Gain (dB)	21	Maximum Frequency (MHz)	860
Minimum Frequency (MHz)	470	Typical Drain Efficiency (%)	46
Minimum Operating Temperature (°C)	-65	Maximum Operating Temperature (°C)	200
Mounting	Screw	Package Height	4.7(Max)
Package Width	10.29(Max)	Package Length	41.28(Max)
PCB changed	5	Supplier Package	SOT-539A
Pin Count	5

Shipping

	Ship Fee	Lead Time
DHL	$20.00-$40.00 (0.50 KG)	2-5 days
Fedex	$20.00-$40.00 (0.50 KG)	2-5 days
UPS	$20.00-$40.00 (0.50 KG)	2-5 days
TNT	$20.00-$40.00 (0.50 KG)	2-5 days
EMS	$20.00-$40.00 (0.50 KG)	2-5 days
REGISTERED AIR MAIL	$20.00-$40.00 (0.50 KG)	2-5 days

Processing Time：Shipping fee depend on different zone and country.

Payment

Terms of payment		Hand Fee
	Wire Transfer	charge US$30.00 banking fee.
	Paypal	charge 4.0% service fee.
	Credit Card	charge 3.5% service fee.
	Western Union	charge US.00 banking fee.
	Money Gram	charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

Step1 :Product
Step2 :Vacuum packaging
Step3 :Anti-static bag
Step4 :Individual packaging
Step5 :Packaging boxes
Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

Part points

The BLF888A is a power amplifier chip commonly used in RF (radio frequency) applications. It belongs to the LDMOS (laterally-diffused metal–oxide–semiconductor) transistor family and offers high power and efficiency. With its excellent linearity and thermal performance, it is widely used in telecommunications, broadcasting, and other wireless infrastructure systems. The BLF888A chip provides a reliable and efficient solution for amplifying RF signals.
Features

BLF888A is a high-power LDMOS transistor designed for applications in the VHF to UHF frequency range. It operates at a maximum power output of 1500 Watts and delivers high gain and efficiency. This transistor also offers excellent thermal stability, suitable for a wide range of RF power amplifier circuits.
Pinout

The BLF888A is a power transistor with a package pin count of three. The pin functions are as follows: Pin 1 is the emitter, Pin 2 is the base, and Pin 3 is the collector.
Manufacturer

The manufacturer of the BLF888A is NXP Semiconductors. NXP is a global semiconductor company that offers a wide range of products and solutions for various industries, including automotive, industrial, and communication sectors.
Application Field

The BLF888A is a power transistor commonly used in RF (radio frequency) amplifier applications, such as base stations for wireless communication systems, radar systems, and industrial applications that require high power and efficiency.
Package

The BLF888A chip has a package type of SOT502A, a form of SMD, and a size of 11.3mm x 5.3mm.