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NXP FQP18N50V2 48HRS

TO-220 Packaged N-Channel MOSFET for Rail Mounting

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: FQP18N50V2

Datasheet: FQP18N50V2 Datasheet (PDF)

Package/Case: TO-220-3

RoHS Status:

Stock Condition: 2580 pcs, New Original

Product Type: Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $4.484 $4.484
200 $1.736 $347.200
500 $1.675 $837.500
1000 $1.644 $1644.000

In Stock:2580 PCS

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Quick Quote

Please submit RFQ for FQP18N50V2 or email to us: Email: [email protected], we will contact you within 12 hours.

FQP18N50V2 General Description

The FQP18N50V2 is a N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high power applications. It features a drain-source voltage (VDS) rating of 500V and a continuous drain current (ID) rating of 18A. This makes it suitable for use in a wide range of circuit designs that require high power handling capabilities.The MOSFET is housed in a TO-220 package, which provides good thermal performance and easy mounting onto a heatsink. It has a low on-resistance of 0.28 ohms, which helps in minimizing power losses and improving efficiency in power electronics applications.The FQP18N50V2 also features a fast switching speed, which makes it suitable for applications that require rapid switching operations. It has a gate threshold voltage (VGS(th)) of 4V to 5V, which allows for easy interfacing with standard logic level signals.

fqp18n50v2

Features

  • High performance Superjunction MOSFET
  • Low on-resistance
  • Operating frequency up to 100 kHz
  • Low gate charge
  • Enhanced avalanche capability
  • RoHS compliant
  • TO-220 packaging
fqp18n50v2

Application

  • Switching power supplies
  • Motor control applications
  • Electric vehicle propulsion systems
  • Induction heating equipment
  • High efficiency DC-DC converters
  • Automotive electronic systems
  • Solar inverters
  • Uninterruptible power supplies
fqp18n50v2

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 18 A Rds On - Drain-Source Resistance 225 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 208 W
Channel Mode Enhancement Brand onsemi / Fairchild
Configuration Single Fall Time 110 ns
Forward Transconductance - Min 16 S Height 16.3 mm
Length 10.67 mm Product Type MOSFET
Rise Time 150 ns Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 95 ns
Typical Turn-On Delay Time 40 ns Width 4.7 mm
Part # Aliases FQP18N50V2_NL

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Part points

  • The FQP18N50V2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chip manufactured by Fairchild Semiconductor. It is designed for high power switching applications and is capable of handling a maximum drain current of 18A and a voltage rating of 500V. With low on-resistance and fast switching speeds, this chip offers efficiency and reliability in various power control circuits.
  • Equivalent

    Some possible equivalent products of the FQP18N50V2 chip include the IRFZ44NPBF, IRF840PBF, and STP18N50K5. It is important to consult the datasheets for each chip to confirm their suitability for your specific application.
  • Features

    FQP18N50V2 is a power MOSFET transistor. Its features include a Vds voltage rating of 500V, a continuous drain current rating of 18A, and a low on-resistance of 0.22Ω. It has excellent switching performance and is suitable for various power applications.
  • Pinout

    The FQP18N50V2 is a power MOSFET with a pin count of 3. The pins are Gate (G), Drain (D), and Source (S). The function of this MOSFET is to control and switch high-current loads in different electronic applications, such as power supplies and motor control.
  • Manufacturer

    The manufacturer of the FQP18N50V2 is Fairchild Semiconductor. Fairchild Semiconductor is a semiconductor manufacturing company that specializes in power and discrete semiconductors. They develop and produce a wide range of products including power MOSFETs, analog and mixed-signal ICs, and optoelectronic components.
  • Application Field

    The FQP18N50V2 is a power MOSFET transistor primarily used in applications that require high voltage and high current handling capabilities. It is typically used in power supplies, motor control applications, inverters, and other high-power electronic circuits.
  • Package

    The FQP18N50V2 chip is in a TO-220 package type, with a through-hole mounting style. It has a standard small-signal form factor and measures approximately 10.4 mm x 5.3 mm x 16.5 mm in size.

Datasheet PDF

Preliminary Specification FQP18N50V2 PDF Download

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