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NXP FQA28N50F 48HRS

3+Tab Configurations

ISO14001 ISO9001 DUNS

Brands: Onsemi

Mfr.Part #: FQA28N50F

Datasheet: FQA28N50F Datasheet (PDF)

Package/Case: TO-3PN-3

RoHS Status:

Stock Condition: 3447 pcs, New Original

Product Type: Transistors

Warranty: 1 Year Ovaga Warranty - Find Out More

Pricing

*All prices are in USD

Qty Unit Price Ext Price
1 $4.676 $4.676
200 $1.809 $361.800
500 $1.748 $874.000
1000 $1.714 $1714.000

In Stock:3447 PCS

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Quick Quote

Please submit RFQ for FQA28N50F or email to us: Email: [email protected], we will contact you within 12 hours.

FQA28N50F General Description

The FQA28N50F is a power MOSFET transistor designed for high power applications. It has a high voltage rating of 500V and a continuous drain current of 28A, making it suitable for use in high power amplifiers, power supplies, motor control systems, and other applications requiring high power handling capabilities. This MOSFET features a low on-resistance of 0.18 ohms, which helps to minimize power losses and improve efficiency in high current applications. It also has a fast switching speed, with a typical turn-on time of 32 ns and a turn-off time of 60 ns, making it ideal for high frequency switching applications.The FQA28N50F is housed in a TO-3P package, which provides good thermal conductivity and heat dissipation capabilities. This package also makes it easy to mount and integrate into existing circuit designs.

fqa28n50f

Features

  • High voltage N-channel MOSFET
  • Integrated fast body diode
  • Low on-resistance
  • Low gate charge
  • High avalanche energy capability
  • Designed for high power switching applications
  • TO-3PF package
  • RoHS compliant
fqa28n50f

Application

  • Switch Mode Power Supplies
  • Electric Vehicle Charging Systems
  • Motor Control Applications
  • Renewable Energy Systems
  • Industrial Inverters
  • UPS Systems
  • Telecommunication Systems
  • Automotive Applications
  • Welding Equipment
  • Medical Devices
fqa28n50f

Specifications

Parameter Value Parameter Value
Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-3PN-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 28.4 A Rds On - Drain-Source Resistance 160 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 310 W
Channel Mode Enhancement Series FQA28N50F
Brand onsemi / Fairchild Configuration Single
Fall Time 175 ns Forward Transconductance - Min 28 S
Height 20.1 mm Length 16.2 mm
Product Type MOSFET Rise Time 290 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 250 ns Typical Turn-On Delay Time 100 ns
Width 5 mm Part # Aliases FQA28N50F_NL
Unit Weight 0.162260 oz

Shipping

Shipping Type Ship Fee Lead Time
DHL DHL $20.00-$40.00 (0.50 KG) 2-5 days
Fedex Fedex $20.00-$40.00 (0.50 KG) 2-5 days
UPS UPS $20.00-$40.00 (0.50 KG) 2-5 days
TNT TNT $20.00-$40.00 (0.50 KG) 2-5 days
EMS EMS $20.00-$40.00 (0.50 KG) 2-5 days
REGISTERED AIR MAIL REGISTERED AIR MAIL $20.00-$40.00 (0.50 KG) 2-5 days

Processing Time:Shipping fee depend on different zone and country.

Payment

Terms of payment Hand Fee
Wire Transfer Wire Transfer charge US$30.00 banking fee.
Paypal Paypal charge 4.0% service fee.
Credit Card Credit Card charge 3.5% service fee.
Western Union Western Union charge US.00 banking fee.
Money Gram Money Gram charge US$0.00 banking fee.

Guarantees

1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.

2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.

Packing

  • Product

    Step1 :Product

  • Vacuum packaging

    Step2 :Vacuum packaging

  • Anti-static bag

    Step3 :Anti-static bag

  • Individual packaging

    Step4 :Individual packaging

  • Packaging boxes

    Step5 :Packaging boxes

  • bar-code shipping tag

    Step6 :bar-code shipping tag

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.

Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.

We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.

After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.

  • ESD
  • ESD

Equivalent Parts

For the FQA28N50F component, you may consider these replacement and alternative parts:

Part Number

Brands

Package

Description

Part Number :   IRF2807PBF

Brands :  

Package :   TO-220AB

Description :   Advanced Process Technology

Part Number :   STP28NF50

Brands :  

Package :  

Description :  

Part Number :   AUIRF2807

Brands :  

Package :   TO-220AB

Description :   Trans MOSFET N-CH 75V 82A Automotive 3Pin(3+Tab) TO-220AB Tube

Part Number :   FQP27P06

Brands :  

Package :   TO-220

Description :   MOSFET 60V P-Channel QFET

Part Number :   FQPF27P06

Brands :  

Package :   TO-220F

Description :   Trans MOSFET P-CH 60V 17A 3-Pin(3+Tab) TO-220FP Tube

Part Number :   STB28NF50

Brands :  

Package :  

Description :  

Part Number :   HUF75344G3

Brands :  

Package :   TO-247

Description :   75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs75A, 55V, 0.008 Ω,N,UltraFETMOS

Part Number :   IPP028N08N3

Brands :  

Package :  

Description :  

Part points

  • The FQA28N50F is a power MOSFET chip designed for high performance and efficiency in power supply and motor drive applications. It has a voltage rating of 500V and a current rating of 28A, making it suitable for a wide range of industrial and consumer electronics applications.
  • Equivalent

    Some equivalent products to the FQA28N50F chip include the IRFI4020H-117P, IRFB4110G, IRF510PBF, and IPP60R190P6. These are all power MOSFET transistors that can be used as alternatives to the FQA28N50F chip in various applications.
  • Features

    The FQA28N50F is a fast recovery diode with a low forward voltage drop, high surge current capability, and low leakage current. It has a rugged design for high power applications, a high reverse recovery speed, and low thermal resistance for improved performance.
  • Pinout

    The FQA28N50F is a 3-pin, TO-3 package N-channel MOSFET transistor. Pin 1 is the Gate, Pin 2 is the Drain, and Pin 3 is the Source. It is used for high power applications such as power supplies, motor controls, and power inverters.
  • Manufacturer

    The FQA28N50F is manufactured by ON Semiconductor, which is a leading supplier of power semiconductor devices. ON Semiconductor provides a wide range of efficient and reliable solutions for power management, automotive, communication, consumer and industrial applications.
  • Application Field

    The FQA28N50F is commonly used in applications requiring high efficiency power switching, such as in switch mode power supplies, motor control, and uninterruptible power supplies. Its high current capability, low on-resistance, and fast switching speed make it ideal for use in various industrial and consumer electronics applications.
  • Package

    The FQA28N50F chip is packaged in TO-3P form with a size of 10.2mm x 15.6mm.

Datasheet PDF

Preliminary Specification FQA28N50F PDF Download

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