NXP BLF881
Trans RF MOSFET N-CH 104V 3-Pin LDMOST
Brands: Ampleon
Mfr.Part #: BLF881
Datasheet: BLF881 Datasheet (PDF)
Package/Case: LDMOST
Product Type: Discrete Semiconductors
RoHS Status:
Stock Condition: 2282 pcs, New Original
Warranty: 1 Year Ovaga Warranty - Find Out More
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Add To BomBLF881 General Description
BLF881 is a high-power RF transistor designed for use in UHF TV broadcast transmitters, as well as other RF applications in the frequency range of 470 MHz to 860 MHz. It is manufactured by NXP Semiconductors, a leading semiconductor company.
Features
- Operating frequency range: 470 MHz to 860 MHz
- Output power: up to 1200 W (PEP)
- Gain: typically 18 dB
- Efficiency: typically 60%
- Voltage: 50 V
- Package type: ceramic envelope with a bolt-down flange
Application
- UHF TV broadcast transmitters
- Cellular base stations
- Land mobile radio systems
- Military communications systems
Specifications
Parameter | Value | Parameter | Value |
---|---|---|---|
ECCN (US) | EAR99 | Part Status | Active |
Configuration | Single | Channel Mode | Enhancement |
Channel Type | N | Number of Elements per Chip | 1 |
Mode of Operation | DVB-T|2-Tone Class-AB | Process Technology | LDMOS |
Maximum Drain Source Voltage (V) | 104 | Maximum Gate Source Voltage (V) | 13 |
Maximum VSWR | 10 | Maximum Drain Source Resistance (mOhm) | 210(Typ)@6.15V |
Typical Input Capacitance @ Vds (pF) | 100@50V | Typical Reverse Transfer Capacitance @ Vds (pF) | 1@50V |
Typical Output Capacitance @ Vds (pF) | 33.5@50V | Output Power (W) | 140(Typ) |
Typical Power Gain (dB) | 21 | Maximum Frequency (MHz) | 860 |
Minimum Frequency (MHz) | 1 | Typical Drain Efficiency (%) | 49 |
Minimum Operating Temperature (°C) | -65 | Maximum Operating Temperature (°C) | 200 |
Mounting | Screw | Package Height | 4.67(Max) |
Package Width | 5.97(Max) | Package Length | 20.45(Max) |
PCB changed | 3 | Supplier Package | LDMOST |
Pin Count | 3 |
Shipping
Shipping Type | Ship Fee | Lead Time | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 days | |
Fedex | $20.00-$40.00 (0.50 KG) | 2-5 days | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 days | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 days | |
REGISTERED AIR MAIL | $20.00-$40.00 (0.50 KG) | 2-5 days |
Processing Time:Shipping fee depend on different zone and country.
Payment
Terms of payment | Hand Fee | |
---|---|---|
Wire Transfer | charge US$30.00 banking fee. | |
Paypal | charge 4.0% service fee. | |
Credit Card | charge 3.5% service fee. | |
Western Union | charge US.00 banking fee. | |
Money Gram | charge US$0.00 banking fee. |
Guarantees
1.The electronic components you purchase include 365 Days Warranty, We guarantee product quality.
2.If some of the items you received aren't of perfect quality, we would resiponsibly arrange your refund or replacement. But the items must remain their orginal condition.
Packing
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Step1 :Product
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Step2 :Vacuum packaging
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Step3 :Anti-static bag
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Step4 :Individual packaging
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Step5 :Packaging boxes
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Step6 :bar-code shipping tag
All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
Equivalent Parts
For the BLF881 component, you may consider these replacement and alternative parts:
Part Number
Brands
Package
Description
Part Number : MRF6VP3450H
Brands :
Package :
Description :
Part Number : MRF6VP11KH
Brands :
Package : NI-123
Description : NI-1230
Part Number : MRF6VP121KH
Brands :
Package :
Description :
Part Number : MRF6VP2600H
Brands :
Package : SMD
Description : RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
Part points
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The BLF881 is a high-power RF transistor chip designed for broadband applications. It is specifically designed for use in FM radio and TV transmitters, mobile radio base stations, and other high-frequency amplification systems. This chip offers high gain, wide bandwidth, and excellent linearity, making it suitable for a range of RF power amplifier applications.
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Equivalent
The BLF881 chip is equivalent to the MRF154, CCI-104, 2SC3789, and SD1407. -
Features
The BLF881 is a high power RF LDMOS transistor featuring a power gain of 16 dB at 870 MHz, a maximum output power of 200 Watts, a drain efficiency of 75%, and a microstrip transmission line input and output for easy integration into RF circuits. -
Pinout
The BLF881 is a power amplifier transistor with 10 pins. The function of the BLF881 is to amplify radio frequency (RF) signals. -
Manufacturer
The manufacturer of the BLF881 is NXP Semiconductors. NXP Semiconductors is a Dutch global semiconductor manufacturer. They specialize in the development and production of a wide range of semiconductors, including RF power transistors like the BLF881, which are commonly used in various applications including wireless communication systems, industrial and medical applications, and radar systems. -
Application Field
The BLF881 is a power transistor that can be used in a variety of applications, including radios, television transmitters, and RF amplifiers. It is commonly used for high-frequency power amplification in the range of 470 to 860 MHz. -
Package
The BLF881 chip is available in a single package type, known as the SOT502B package. It has a form of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and has a compact size suitable for various applications.
Datasheet PDF
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